公开(公告)号：US20100025849A1

公开(公告)日：2010-02-04

申请号：US12489409

申请日：2009-06-22

申请人： Yong Chuan KOH ,  Jimmy SIAT ,  Jeffrey Nantes SALAMAT ,  Lope Vallespin PEPITO, JR. ,  Ronaldo Cayetano CALDERON ,  Rodel MANALAC ,  Pang Hup ONG ,  Kian Teng ENG

发明人： Yong Chuan KOH ,  Jimmy SIAT ,  Jeffrey Nantes SALAMAT ,  Lope Vallespin PEPITO, JR. ,  Ronaldo Cayetano CALDERON ,  Rodel MANALAC ,  Pang Hup ONG ,  Kian Teng ENG

IPC分类号： H01L23/498 ,  H01L21/60 ,  B23K31/02

CPC分类号： H01L25/0657 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48478 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85395 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2225/0651 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19107 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4826 ,  H01L2924/00015 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A semiconductor package and a method for constructing the package are disclosed. The package includes a substrate and a die attached thereto. A first contact region is disposed on the substrate and a second contact region is disposed on the die. The first contact region, for example, comprises copper coated with an OSP material. A copper wire bond electrically couples the first and second contact regions. Wire bonding includes forming a ball bump on the first contact region having a flat top surface. Providing the flat top surface is achieved with a smoothing process. A ball bond is formed on the second contact region, followed by stitching the wire onto the flat top surface of the ball bump on the first contact region.

摘要翻译： 公开了一种用于构造封装的半导体封装和方法。 该包装包括一个基片和一个附着于其上的管芯。 第一接触区域设置在基板上，并且第二接触区域设置在管芯上。 第一接触区域例如包括用OSP材料涂覆的铜。 铜线接合电耦合第一和第二接触区域。 线接合包括在具有平坦顶表面的第一接触区域上形成球凸点。 通过平滑处理实现提供平坦的顶面。 在第二接触区域上形成球接合，然后将线缝合到第一接触区域上的球凸块的平坦顶表面上。

公开(公告)号：US20120034738A1

公开(公告)日：2012-02-09

申请号：US13278152

申请日：2011-10-20

申请人： Denver Paul C. CASTILLO ,  Bryan Soon Hua TAN ,  Rodel MANALAC ,  Kian Teng ENG ,  Pang Hup ONG ,  Soo Pin CHOW ,  Wolfgang Johannes HETZEL ,  Werner Josef REISS ,  Florian AMMER

发明人： Denver Paul C. CASTILLO ,  Bryan Soon Hua TAN ,  Rodel MANALAC ,  Kian Teng ENG ,  Pang Hup ONG ,  Soo Pin CHOW ,  Wolfgang Johannes HETZEL ,  Werner Josef REISS ,  Florian AMMER

IPC分类号： H01L21/50

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0635 ,  H01L2924/00 ,  H01L2924/3512

摘要： A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to 10 Kg, the heat has a temperature range from approximately 150 to 200° C. and the pressure is applied for a range of approximately 1 to 10 seconds.

摘要翻译： 将半导体管芯安装在具有第一表面上的焊料掩模的基板上的方法包括将管芯放置在焊接掩模上，并通过施加压力和热量将管芯安装到基板上。 施加的压力范围为约5至10Kg的粘合力，热量的温度范围为约150至200℃，并且压力施加约1至10秒的范围。