摘要:
An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.
摘要:
A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.
摘要:
In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
摘要:
In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.
摘要:
A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
摘要:
A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
摘要翻译:一种用于形成SiO 2 + L,Si 3 N 4或SixO y N z的膜的气相生长方法,其包括将有机或无机硅烷的混合物与一种或多种包含O 2,N 2 O,NO 2 + L,NO,CO 2 + L的反应气体 ,CO和NH 3,条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。 该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中,并将放置在反应室中的基板室的表面进行紫外线照射。 该照射激发反应气体,这允许进行低温气相生长。 光激发仅在UV照射部分选择性地发生,从而在UV照射的范围内,可以在衬底表面上选择性地发生膜生长。 可选地使用合适的掩模允许在基板表面上形成规定图案的膜。
摘要:
The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.
摘要翻译:本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。 该方法包括以下步骤:通过使用其中进行氧化的成膜气体,在基板206上形成含有P 2 O 3的含磷绝缘膜45a。 将气体加入到含有III价态的磷的含磷化合物的气体混合物中,其中氧与III价态的磷的至少一个键结合,并且含硅化合物,或者通过使用成膜气体从 除去氧化气体,同时加热含磷绝缘膜45a,同时对绝缘膜45a施加加速度,使绝缘膜流化,从而使绝缘膜45b的表面平坦化,同时绝缘膜45a具有预定的粘度,并进一步加热 绝缘膜45b的表面之后的绝缘膜45b被平坦化,以使绝缘膜45b中的P2O3升华,从而固化绝缘膜45b。
摘要:
A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.
摘要翻译:提供一种成膜方法,用于形成用于覆盖半导体集成电路器件的互连层等的平面化层间绝缘膜。 在将含有III价磷和至少一个磷键的含磷化合物的反应气体供给到氧的同时,在沉积基板上形成包含P 2 O 3的含硅绝缘膜,从而大大降低了用于平坦化的流化温度。
摘要:
The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.
摘要:
The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which at least one oxygen is bonded to the phosphorous, and forming a silicon containing insulating film containing P2O3 on a substrate by using the deposition gas.