Semiconductor integrated circuit having logic gates
    1.
    发明授权
    Semiconductor integrated circuit having logic gates 失效
    具有逻辑门的半导体集成电路

    公开(公告)号:US5387827A

    公开(公告)日:1995-02-07

    申请号:US643372

    申请日:1991-01-22

    摘要: A semiconductor integrated logic circuit is provided which includes a plurality of logic gates each having a first input terminal for respectively receiving first input signals, wherein each of the logic gates is coupled to a common node. In one embodiment, first and second switching elements are also coupled to the common node. The first and second switching elements are both coupled to a second input terminal for receiving a second input signal which is common to the plurality of logic gates, and both operate complementary to one another in response to the second input signal. This arrangement is particularly effective for decoders in semiconductor memory circuits which use a common NMOS to receive one input for a plurality of logic decoder gates. An improved read/write arrangement is also provided for semiconductor memory circuits which includes circuitry to prevent connection of a common read line to the data lines during the writing operation. This enhances the writing speed by removing the load of the common read line during writing.

    摘要翻译: 提供了一种半导体集成逻辑电路,其包括多个逻辑门,每个逻辑门具有用于分别接收第一输入信号的第一输入端,其中每个逻辑门耦合到公共节点。 在一个实施例中,第一和第二开关元件也耦合到公共节点。 第一和第二开关元件都耦合到第二输入端子,用于接收多个逻辑门公共的第二输入信号,并且它们都响应于第二输入信号互相互补。 这种布置对于使用公共NMOS来接收多个逻辑解码器门的一个输入的半导体存储器电路中的解码器特别有效。 还提供了一种用于半导体存储器电路的改进的读/写布置,其包括在写入操作期间防止公共读取线连接到数据线的电路。 这通过在写入期间去除公共读取线的负载来增强写入速度。

    Semiconductor integrated circuit having logi gates
    2.
    发明授权
    Semiconductor integrated circuit having logi gates 失效
    具有逻辑门的半导体集成电路

    公开(公告)号:US5675548A

    公开(公告)日:1997-10-07

    申请号:US608605

    申请日:1996-02-29

    摘要: An arrangement which is particularly effective for decoders in semiconductor memory circuits which use, for example, common NMOS to receive one input for a plurality of logic decoder gates is provided includes a plurality of logic gates each having a first input terminal for respectively receiving first input signals and each being coupled to a common node. In one embodiment, first and second switching elements are also coupled to the common node. The first and second switching elements are both coupled to a second input terminal for receiving a second input signal which is common to the plurality of logic gates, and both operate complementary to one another in response to the second input signal. An improved read/write arrangement is also provided for such semiconductor memory circuit which includes circuitry to prevent connection of a common read line to the data lines during the writing operation. This enhances the writing speed by removing the load of the common read line during writing.

    摘要翻译: 提供了对于使用例如公共NMOS来接收多个逻辑解码器门的一个输入的半导体存储器电路中的解码器特别有效的装置,其包括多个逻辑门,每个逻辑门具有用于分别接收第一输入的第一输入端 信号,并且每个都耦合到公共节点。 在一个实施例中,第一和第二开关元件也耦合到公共节点。 第一和第二开关元件都耦合到第二输入端子,用于接收多个逻辑门公共的第二输入信号,并且它们都响应于第二输入信号互相互补。 还提供了一种用于这种半导体存储器电路的改进的读/写布置,该电路包括用于在写入操作期间公共读取线与数据线的连接的电路。 这通过在写入期间去除公共读取线的负载来增强写入速度。

    Semiconductor integrated circuit having logic gates
    3.
    发明授权
    Semiconductor integrated circuit having logic gates 失效
    具有逻辑门的半导体集成电路

    公开(公告)号:US5544125A

    公开(公告)日:1996-08-06

    申请号:US383866

    申请日:1995-02-06

    摘要: An arrangement which is particularly effective for decoders in semiconductor memory circuits which use, for example, common NMOS to receive one input for a plurality of logic decoder gates is provided includes a plurality of logic gates each having a first input terminal for respectively receiving first input signals, and each being coupled to a common node. In one embodiment, first and second switching elements are also coupled to the common node. The first and second switching elements are both coupled to a second input terminal for receiving a second input signal which is common to the plurality of logic gates, and both operate complementary to one another in response to the second input signal. An improved read/write arrangement is also provided for such semiconductor memory circuits which includes circuitry to prevent connection of a common read line to the data lines during the writing operation. This enhances the writing speed by removing the load of the common read line during writing.

    摘要翻译: 提供了对于使用例如公共NMOS来接收多个逻辑解码器门的一个输入的半导体存储器电路中的解码器特别有效的装置,其包括多个逻辑门,每个逻辑门具有用于分别接收第一输入的第一输入端 信号,并且每个都耦合到公共节点。 在一个实施例中,第一和第二开关元件也耦合到公共节点。 第一和第二开关元件都耦合到第二输入端子,用于接收多个逻辑门公共的第二输入信号,并且它们都响应于第二输入信号互相互补。 还提供了一种改进的读/写布置,用于这样的半导体存储器电路,其包括在写入操作期间防止公共读取线与数据线连接的电路。 这通过在写入期间去除公共读取线的负载来增强写入速度。

    Signal transition detector circuit
    4.
    发明授权
    Signal transition detector circuit 失效
    信号转换检测电路

    公开(公告)号:US5680066A

    公开(公告)日:1997-10-21

    申请号:US182699

    申请日:1994-01-13

    摘要: A semiconductor device which includes at least one of (1) an input buffer circuit formed of an input level converter and a non-inverting buffer circuit and an inverting buffer circuit each including BiCMOS circuitry which effects high-speed operation; (2) a decoder circuit formed of plural logic gates each of which is composed of the combination of MOS and bipolar circuitry; (3) a sense amplifier circuit including a multiemitter transistor; (4) a signal or address transition detector circuit which includes input circuits each receiving, for example, an address signal of a voltage amplitude and outputting a current amplitude signal in response to a change in level of the address signal, and a detector circuit connected thereto which has a cascode amplifier arranged such that it receives current amplitude signals at an input thereof and in which the cascode amplifier input is maintained at a substantially constant voltage, in which the detection circuit detects a transition of one or more of the current amplitude signals and, in response thereto, generates an ATD signal of a voltage amplitude; and (5) an output buffer circuit, in which the decoder, sense amplifier and output buffer of the device such as for a memory are controlled in accordance with signals from a clock generator, which is responsive to the ATD signal.

    摘要翻译: 一种半导体器件,其包括以下中的至少一个:(1)由输入电平转换器和非反相缓冲电路构成的输入缓冲电路和各自包括实现高速操作的BiCMOS电路的反相缓冲电路; (2)由多个逻辑门形成的解码器电路,每个逻辑门由MOS和双极电路的组合组成; (3)包括多端子晶体管的读出放大器电路; (4)信号或地址转换检测器电路,其包括各自接收例如电压幅度的地址信号并且响应于地址信号的电平的变化而输出当前振幅信号的输入电路,以及连接的检测器电路 具有共源共栅放大器,其布置成使得其在其输入处接收电流幅度信号,并且其中共源共栅放大器输入保持在基本上恒定的电压,其中检测电路检测到一个或多个当前幅度信号的转变 并且响应于此产生电压幅度的ATD信号; 以及(5)输出缓冲器电路,其中根据来自响应于ATD信号的时钟发生器的信号来控制诸如存储器的装置的解码器,读出放大器和输出缓冲器。

    Bipolar MOS logic circuit and semiconductor integrated circuit
    7.
    发明授权
    Bipolar MOS logic circuit and semiconductor integrated circuit 失效
    双极MOS逻辑电路和半导体集成电路

    公开(公告)号:US5057713A

    公开(公告)日:1991-10-15

    申请号:US486419

    申请日:1990-02-28

    摘要: An invention is disclosed, which is suitable for operating a bipolar-MOS logic circuit, and in particular Bi-CMOS logic circuit with a low power supply voltage below 5V, e.g. around 3V. According to the present logic circuit, since the base current of a second NPN transistor is supplied from a power supply through a PMOS transistor (first current switching means), the impedance of which is lowered previously by a logic inverting means and an NMOS logic circuit (second current switching means), which is on/off controlled by an input signal, in a transient logic level transition period where the output is switched from the level "1" to "0" (i.e. it falls), it is possible to supply a sufficient base current to the second NPN. In this way, it is possible to turn-on the second NPN with a high speed and to pull down to the level "0" with high speed. Further, since the PMOS is switched off owing to the action of the logic inverting means just after having allowed a sufficient base current flow therethrough, the current path, through which the base current of the second NPN is supplied, is stopped and thus DC power consumption is elimated.

    摘要翻译: 公开了一种适用于操作双极MOS逻辑电路的发明,特别是具有低于5V的低电源电压的Bi-CMOS逻辑电路,例如, 3V左右 根据本逻辑电路,由于第二NPN晶体管的基极电流通过PMOS晶体管(第一电流开关装置)从电源提供,其阻抗先前由逻辑反相装置和NMOS逻辑电路 (第二电流切换装置),其在输出从电平“1”切换到“0”的瞬态逻辑电平转换周期(即,其下降)中,其由输入信号控制的开/关控制, 向第二NPN提供足够的基极电流。 以这种方式,可以高速打开第二个NPN并以高速下拉到“0”电平。 此外,由于刚刚在允许足够的基极电流流动之后由于逻辑反相装置的作用使PMOS截止,所以提供第二NPN的基极电流的电流通路被停止,因此直流电力 消费被淘汰。

    Semiconductor device and manufacturing method thereof
    9.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号:US08687444B2

    公开(公告)日:2014-04-01

    申请号:US13200649

    申请日:2011-09-28

    IPC分类号: G11C7/00

    摘要: A plurality of memory cells are tested in order. Each time a defective memory cell is detected by the test, error pattern information is updated based on a relative arrangement relationship between a plurality of defective memory cells, and error address information is updated based on the addresses of at least part of the plurality of defective memory cells. According to the present invention, it is possible to significantly reduce the storage capacity of the analysis memory. This allows the implementation of the analysis memory itself in the semiconductor device, in which case external testers need not include the analysis memory.

    摘要翻译: 按顺序测试多个存储单元。 每次通过测试检测到有缺陷的存储单元时,基于多个有缺陷的存储单元之间的相对布置关系来更新错误模式信息,并且基于多个缺陷存储器单元的至少一部分的地址来更新错误地址信息 记忆细胞 根据本发明,可以显着降低分析存储器的存储容量。 这允许在半导体器件中实现分析存储器本身,在这种情况下外部测试器不需要包括分析存储器。

    Bandgap reference circuit and method of starting bandgap reference circuit
    10.
    发明授权
    Bandgap reference circuit and method of starting bandgap reference circuit 有权
    带隙参考电路及启动带隙参考电路的方法

    公开(公告)号:US08294449B2

    公开(公告)日:2012-10-23

    申请号:US12547156

    申请日:2009-08-25

    申请人: Akira Ide

    发明人: Akira Ide

    IPC分类号: G05F3/28

    CPC分类号: G05F3/30

    摘要: In accordance with a bandgap circuit and a method of starting the bandgap circuit, a start signal is continuously supplied to a differential amplifier circuit to start up the differential amplifier circuit that controls a bandgap core circuit until the differential amplifier circuit has started up, and then the supply of the start signal to the differential amplifier circuit is discontinued after the differential amplifier circuit has started up.

    摘要翻译: 根据带隙电路和启动带隙电路的方法,将启动信号连续地提供给差分放大器电路,以启动控制带隙核心电路的差分放大器电路,直到差分放大器电路启动,然后 在差分放大器电路启动之后,停止向差分放大器电路提供起始信号。