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    Semiconductor device and fabrication method thereof
    2.
    发明授权
    Semiconductor device and fabrication method thereof 失效
    半导体器件及其制造方法

    公开(公告)号：US07560781B2

    公开(公告)日：2009-07-14

    申请号：US11651617

    申请日：2007-01-10

    申请人： Toshihisa Gotoh ,  Kenichi Azuma ,  Kouichi Takeuchi ,  Akiyoshi Mutoh

    发明人： Toshihisa Gotoh ,  Kenichi Azuma ,  Kouichi Takeuchi ,  Akiyoshi Mutoh

    IPC分类号： H01L29/76

    CPC分类号： H01L21/823878 ,  H01L21/76237 ,  H01L21/823807 ,  H01L29/7846

    摘要： A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.

    摘要翻译： 半导体器件包括沟槽中的第一绝缘层和第二绝缘层。 第一绝缘层将两个MOSFET彼此绝缘，并且第二绝缘层具有与第一绝缘层的真实应力相反的真实应力。 第二绝缘层包括两个不同真实应力的区域。 这使得能够在采用用于元件隔离的STI方法的半导体器件中独立地控制每个MOSFET中的漏极电流。

    Method for manufacturing semiconductor device
    6.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5998284A

    公开(公告)日：1999-12-07

    申请号：US803753

    申请日：1997-02-21

    申请人： Kenichi Azuma

    发明人： Kenichi Azuma

    IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/324 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L21/425

    CPC分类号： H01L29/665 ,  H01L21/2652 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823835

    摘要： In a semiconductor device manufacturing method, when an impurity is implanted into a region for forming an impurity diffused layer in a silicon substrate, or into a polysilicon layer formed on the silicon substrate, the injection of the impurity is carried out through a protective film, such as a TiN film, which contains no oxygen and which is selectively removable from silicon. Thereafter, an annealing for activating the impurity thus implanted is applied so that an impurity diffused layer is formed, and the protective film is removed. Subsequently, a refractory metal film is adhesively provided on the silicon surface of the region where the impurity diffused layer is formed, and reaction between the silicon and the refractory metal film is caused by an annealing so that a refractory metal silicide film is formed. With this arrangement, it is possible to produce a semiconductor device which has a refractory metal silicide film having a low resistance.

    摘要翻译： 在半导体器件制造方法中，当在硅衬底中形成杂质扩散层的区域或者在硅衬底上形成的多晶硅层中注入杂质时，通过保护膜进行杂质的注入， 例如不含氧的可从硅选择性地除去的TiN膜。 此后，施加用于激活这样注入的杂质的退火，使得形成杂质扩散层，并且去除保护膜。 随后，在形成杂质扩散层的区域的硅表面上粘附难熔金属膜，并且通过退火引起硅和难熔金属膜之间的反应，从而形成难熔金属硅化物膜。 利用这种布置，可以制造具有低电阻的难熔金属硅化物膜的半导体器件。

    Conveyor truck
    7.
    发明授权
    Conveyor truck 失效
    输送车

    公开(公告)号：US4529052A

    公开(公告)日：1985-07-16

    申请号：US643930

    申请日：1984-08-24

    申请人： Hiroshi Imai ,  Keiji Takeuchi ,  Kenichi Azuma ,  Hironori Ozaki

    发明人： Hiroshi Imai ,  Keiji Takeuchi ,  Kenichi Azuma ,  Hironori Ozaki

    IPC分类号： B62D9/00 ,  B62D61/10 ,  G05D1/02

    CPC分类号： B62D61/10 ,  B62D9/00 ,  G05D1/0212 ,  G05D2201/0216

    摘要： A conveyor truck including a truck body and a plurality of rotary members rotatably mounted on the truck body in a plane parallel to the floor. A pair of drive wheels, rotatable by aligned rotary shafts lying in a plane parallel to the floor, are mounted on each rotary member. The rotation of each drive wheel can be independently controlled. Supports are mounted on the respective rotary members and are arranged generally perpendicular to the rotary shafts of the drive wheels. The supports support the drive wheels so as to rotate about the center axes of the respective rotary members and parallel to the floor, whereby the conveyor truck can smoothly move in any direction without reorientation of the truck body.

    摘要翻译： 一种输送车，其包括卡车主体和多个旋转构件，所述多个旋转构件在与所述地板平行的平面中可转动地安装在所述卡车主体上。 一对驱动轮，通过位于与地板平行的平面中的对准的旋转轴旋转，安装在每个旋转构件上。 每个驱动轮的旋转可独立控制。 支撑件安装在相应的旋转构件上并且大致垂直于驱动轮的旋转轴布置。 支撑件支撑驱动轮以围绕相应的旋转构件的中心轴线并且平行于地板旋转，由此，输送车可以在任何方向上平稳地移动，而不需要重新定位卡车车身。

    CELLULAR RADIO COMMUNICATION SYSTEM, RADIO BASE STATION APPARATUS AND RADIO TERMINAL UNIT
    8.
    发明申请
    CELLULAR RADIO COMMUNICATION SYSTEM, RADIO BASE STATION APPARATUS AND RADIO TERMINAL UNIT 失效
    无线电无线电通信系统，无线电基站和无线电终端单元

    公开(公告)号：US20110158190A1

    公开(公告)日：2011-06-30

    申请号：US12961707

    申请日：2010-12-07

    申请人： Mikio KUWAHARA ,  Hajime Kanzaki ,  Kenichi Azuma

    发明人： Mikio KUWAHARA ,  Hajime Kanzaki ,  Kenichi Azuma

    IPC分类号： H04W72/04

    CPC分类号： H04L5/0037 ,  H04B7/0413 ,  H04B7/0617 ,  H04L5/0007 ,  H04L5/0023 ,  H04L5/0062 ,  H04W72/00 ,  H04W88/08

    摘要： In a cellular radio communication system including of multi-antenna base stations, to make effective use of the reduced interference in supposing the use of beam form and avoid the interference in an adjacent station even if a space multiplex and the beam form are mixed. Frequencies intended for the cell edge in an FFR are classified into frequencies for space multiplex and a frequency for beam form. Thereby, a frequency at which the interference is reduced by the beam form is fixed. A frequency intended for the cell center is in a frequency band and signals are transmitted from three base stations.

    摘要翻译： 在包括多天线基站的蜂窝无线电通信系统中，即使混合了空间复用和波束形式，为了有效地利用波束形式的使用中的减少的干扰，也避免了相邻站中的干扰。 用于FFR中的小区边缘的频率被分为用于空间复用的频率和波束形式的频率。 因此，固定了通过波束形式减小干扰的频率。 用于小区中心的频率在频带中，并且信号从三个基站发送。

    Semiconductor device having a low dielectric constant film and manufacturing method thereof
    9.
    发明授权
    Semiconductor device having a low dielectric constant film and manufacturing method thereof 有权
    具有低介电常数膜的半导体器件及其制造方法

    公开(公告)号：US07187031B2

    公开(公告)日：2007-03-06

    申请号：US10157908

    申请日：2002-05-31

    申请人： Kenichi Azuma

    发明人： Kenichi Azuma

    IPC分类号： H01L29/76 ,  H01L21/336

    CPC分类号： H01L29/4983 ,  H01L29/41775 ,  H01L29/6656 ,  H01L29/66628 ,  Y10S257/90

    摘要： A semiconductor device has a structure that reduces the parasitic capacitance by using a film with a low relative dielectric constant as the side wall material of the gate. The material with a low relative dielectric constant is preferably a material whose relative dielectric constant is less than the relative dielectric constant of an oxide film, i.e., less than about 3.9.

    摘要翻译： 半导体器件具有通过使用具有低相对介电常数的膜作为栅极的侧壁材料来减小寄生电容的结构。 具有低相对介电常数的材料优选是其相对介电常数小于氧化膜的相对介电常数的材料，即小于约3.9。

    MOS transistor and fabrication process therefor
    10.
    发明授权
    MOS transistor and fabrication process therefor 失效
    MOS晶体管及其制造工艺

    公开(公告)号：US5734185A

    公开(公告)日：1998-03-31

    申请号：US694067

    申请日：1996-08-08

    申请人： Katsuji Iguchi ,  Kenichi Azuma ,  Akio Kawamura

    发明人： Katsuji Iguchi ,  Kenichi Azuma ,  Akio Kawamura

    IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/72 ,  H01L29/73

    CPC分类号： H01L29/66568 ,  H01L21/26586 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/823814 ,  H01L21/82385 ,  H01L27/092 ,  H01L29/42376 ,  H01L29/66553 ,  H01L29/66583 ,  H01L29/66537

    摘要： An MOS transistor comprises a semiconductor substrate having a field region; a gate electrode formed on the semiconductor substrate through the intermediatry of a gate insulating film; and source/drain regions formed in the semiconductor substrate; wherein the field region including at least a lower insulating film and an upper insulating film made of a material permitting the upper insulating film to be selectively etched with respect to the lower insulating film; the gate electrode being configured such that the gate length of a top surface thereof is greater than the gate length of a bottom surface thereof facing a channel region positioned between the source/drain regions; the gate electrode having a sidewall spacer formed of a sidewall insulating layer made of the lower insulating film and a material permitting the sidewall insulating layer to be selectively etched with respect to the upper insulating film, the sidewall spacer contacting a side wall of the gate electrode for covering an outer periphery of the channel region; and the channel region being substantially leveled with the source/drain regions.

    摘要翻译： MOS晶体管包括具有场区域的半导体衬底; 通过栅极绝缘膜的中间形成在半导体衬底上的栅电极; 以及形成在半导体衬底中的源/漏区; 其中所述场区域至少包括下绝缘膜和由允许所述上绝缘膜的材料制成的上绝缘膜相对于所述下绝缘膜选择性蚀刻; 所述栅电极被配置为使得其顶表面的栅极长度大于其面向位于所述源/漏区之间的沟道区的底表面的栅极长度; 所述栅电极具有由由所述下绝缘膜制成的侧壁绝缘层形成的侧壁间隔件和允许所述侧壁绝缘层相对于所述上绝缘膜选择性蚀刻的材料，所述侧壁间隔件与所述栅电极的侧壁接触 用于覆盖通道区域的外围; 并且所述沟道区域与源极/漏极区域基本平齐。