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    LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION
    7.
    发明申请
    LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
    具有增强量子效率的发光二极管和制造方法

    公开(公告)号：US20120235116A1

    公开(公告)日：2012-09-20

    申请号：US13387713

    申请日：2010-07-30

    申请人： Jie Su ,  Olga Kryliouk ,  Yuriy Melnik ,  Hidehiro Kojiri ,  Lu Chen ,  Tetsuya Ishikawa

    发明人： Jie Su ,  Olga Kryliouk ,  Yuriy Melnik ,  Hidehiro Kojiri ,  Lu Chen ,  Tetsuya Ishikawa

    IPC分类号： H01L33/04 ,  C30B25/02 ,  H01B1/02 ,  C30B25/08

    CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/325

    摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.

    摘要翻译： 量子阱结构的一个实施例包括有源区，包括有源层，其包括量子阱和阻挡层，其中一些或全部有源层是p型掺杂的。 通过将PN结的位置定位在器件的有源区域中，P型掺杂部分或全部有源层提高了III-V族化合物半导体发光二极管的量子效率，从而能够在主动区域内发生主要的辐射复合 。 在一个实施例中，量子阱结构在具有共晶源合金的氢化物气相外延（HVPE）沉积室的簇工具中制造。 在一个实施例中，氮化铟镓（InGaN）层和掺杂镁的氮化镓（Mg-GaN）或镁掺杂的氮化铝镓（Mg-AlGaN）层通过簇工具在分开的室中生长以避免铟和镁的交叉 污染。 还描述了使用III族金属共晶体通过氢化物气相外延掺杂的III族氮化物。 在一个实施例中，提供了用于HVPE沉积p型或n型III族氮化物外延膜的源，该源包括具有III族的液相机械（共晶）混合物。 在一个实施例中，提供了一种用于执行p型或n型III族氮化物外延膜的HVPE沉积的方法，该方法包括使用具有III族物质的液相机械（共晶）混合物。

    METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE
    8.
    发明申请
    METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE 审中-公开
    在HVPE中形成原位前置GaN沉积层的方法

    公开(公告)号：US20100279020A1

    公开(公告)日：2010-11-04

    申请号：US12770306

    申请日：2010-04-29

    申请人： Yuriy Melnik ,  Hidehiro Kojiri ,  Olga Kryliouk ,  Tetsuya Ishikawa

    发明人： Yuriy Melnik ,  Hidehiro Kojiri ,  Olga Kryliouk ,  Tetsuya Ishikawa

    IPC分类号： B05D1/36

    CPC分类号： C23C16/4488 ,  C23C16/303 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/403

    摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.

    摘要翻译： 提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。 元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。 可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。 非晶层可以通过热处理部分或完全重结晶。 代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。 氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。 缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

    METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS
    10.
    发明申请
    METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS 有权
    改善III组氮化物缓冲层生长的方法

    公开(公告)号：US20120295418A1

    公开(公告)日：2012-11-22

    申请号：US13469050

    申请日：2012-05-10

    申请人： Yuriy Melnik ,  Lu Chen ,  Hidehiro Kojiri

    发明人： Yuriy Melnik ,  Lu Chen ,  Hidehiro Kojiri

    IPC分类号： H01L21/205

    CPC分类号： H01L21/02304 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/872

    摘要： Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

    摘要翻译： 公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。 在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。 在沉积缓冲层期间，卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。 可以使用含有铝的低温缓冲液（例如AlN，AlGaN）和含有铝的高温缓冲液（例如AlN，AlGaN）的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。 缓冲液可以沉积在衬底上，或者沉积在另一缓冲液的表面上。 附加的缓冲层可以作为III族氮化物层（例如，GaN，AlGaN，AlN）中的中间层添加。