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    Method for producing gate stack sidewall spacers
    5.
    发明授权
    Method for producing gate stack sidewall spacers 有权
    栅堆叠侧墙的制造方法

    公开(公告)号：US07253123B2

    公开(公告)日：2007-08-07

    申请号：US11032859

    申请日：2005-01-10

    申请人： Reza Arghavani ,  Michael Chiu Kwan ,  Li-Qun Xia ,  Kang Sub Yim

    发明人： Reza Arghavani ,  Michael Chiu Kwan ,  Li-Qun Xia ,  Kang Sub Yim

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L29/4983 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L29/6659

    摘要： A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, oxygen doped silicon carbide, nitrogen doped silicon carbide, carbon doped silicon nitride, nitrogen doped silicon oxycarbide, or combinations thereof. The deposition is performed in a plasma enhanced chemical vapor deposition chamber and the deposition temperature is less than 450° C. The sidewall spacers so produced provide good capacity resistance, as well as excellent structural stability and hermeticity.

    摘要翻译： 一种用于在栅极堆叠上形成侧壁间隔物的方法，其通过在栅极结构上使用PECVD工艺沉积一层或多层含硅材料以产生具有约3.0至约5.0的总k值的间隔物。 含硅材料可以是碳化硅，氧掺杂碳化硅，氮掺杂碳化硅，碳掺杂氮化硅，氮掺杂碳氧化碳或其组合。 沉积在等离子体增强化学气相沉积室中进行，并且沉积温度低于450℃。如此制备的侧壁间隔物提供了良好的容量阻力以及良好的结构稳定性和气密性。

    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition
    7.
    发明申请
    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition 审中-公开
    用于氮化硅沉积的混合通电和非能量气体

    公开(公告)号：US20120009803A1

    公开(公告)日：2012-01-12

    申请号：US13212153

    申请日：2011-08-17

    申请人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    发明人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    IPC分类号： H01L21/318

    CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

    摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

    摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体箱，其具有第一入口以接收第一处理气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

    Method of depositing an amorphous carbon film for etch hardmask application
    8.
    发明授权
    Method of depositing an amorphous carbon film for etch hardmask application 有权
    沉积用于蚀刻硬掩模应用的无定形碳膜的方法

    公开(公告)号：US07638440B2

    公开(公告)日：2009-12-29

    申请号：US10799146

    申请日：2004-03-12

    申请人： Yuxiang May Wang ,  Sudha S. R. Rathi ,  Michael Chiu Kwan ,  Hichem M'Saad

    发明人： Yuxiang May Wang ,  Sudha S. R. Rathi ,  Michael Chiu Kwan ,  Hichem M'Saad

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： G03F7/094 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/7684

    摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

    摘要翻译： 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层 并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义 层。 无定形碳层可用作蚀刻停止层，抗反射涂层或两者。