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公开(公告)号：US2878148A
公开(公告)日：1959-03-17
申请号：US65529157
申请日：1957-04-26
CPC分类号： H01L23/10 , A47B31/00 , B23K35/24 , H01L21/00 , H01L21/24 , H01L21/48 , H01L23/14 , H01L2224/45144 , H01L2224/4847 , H01L2224/4849 , H01L2924/01079 , Y10S228/904 , H01L2924/00
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公开(公告)号：US07952028B2
公开(公告)日：2011-05-31
申请号：US12747434
申请日：2009-01-20
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01R4/62
CPC分类号： C22C5/02 , B21C37/047 , B23K35/0261 , B23K35/0272 , B23K35/24 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C22F1/08 , C22F1/14 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/4849 , H01L2224/4851 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2225/06562 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01L2924/01004 , H01L2924/01203 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/01204 , H01L2924/01202 , H01L2224/48465 , H01L2924/20751 , H01L2924/01001 , H01L2924/20655 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20656 , H01L2924/00 , H01L2224/48824 , H01L2924/00014 , H01L2924/013 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2075 , H01L2924/20754
摘要： A high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b≦0.7.
摘要翻译： 适用于半球安装技术的高性能接合线，例如堆叠芯片接合，变薄和细间距安装，其中可以抑制在球和弹簧故障的直立位置处的钢丝倾斜（倾斜）并且循环线性和 回路高度稳定性非常好。 这种半导体器件用接合线包括由导电性金属构成的芯材以及形成在芯材上并含有以芯材为主要成分的金属的表层， 其中，沿着线周向的线表面上的表层中的晶粒的平均尺寸（a）与正常截面上的芯材中的晶粒的平均尺寸（b）之间的关系，正交截面 作为与线轴垂直的横截面，满足a / b＆nlE的不等式; 0.7。
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公开(公告)号：US20100282495A1
公开(公告)日：2010-11-11
申请号：US12747434
申请日：2009-01-20
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01B5/00
CPC分类号： C22C5/02 , B21C37/047 , B23K35/0261 , B23K35/0272 , B23K35/24 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C22F1/08 , C22F1/14 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/4849 , H01L2224/4851 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2225/06562 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01L2924/01004 , H01L2924/01203 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/01204 , H01L2924/01202 , H01L2224/48465 , H01L2924/20751 , H01L2924/01001 , H01L2924/20655 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20656 , H01L2924/00 , H01L2224/48824 , H01L2924/00014 , H01L2924/013 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2075 , H01L2924/20754
摘要： An object of the present invention is to provide a high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b≦0.7.
摘要翻译： 本发明的目的是提供一种适用于半导体安装技术的高性能接合线，例如层叠芯片接合，变薄和细间距安装，其中，在钢的直立位置上的钢丝倾斜（倾斜） 可以抑制弹簧故障，并且环路线性和环路高度稳定性优异。 这种半导体器件用接合线包括由导电性金属构成的芯材以及形成在芯材上并含有以芯材为主要成分的金属的表层， 其中，沿着线周向的线表面上的表层中的晶粒的平均尺寸（a）与正常截面上的芯材中的晶粒的平均尺寸（b）之间的关系，正交截面 作为与线轴垂直的横截面，满足a / b＆nlE的不等式; 0.7。
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