Semiconductor device
    5.
    发明授权

    公开(公告)号:US12100764B2

    公开(公告)日:2024-09-24

    申请号:US17428555

    申请日:2020-02-07

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes a semiconductor layer that has a main surface, a trench gate structure that includes a trench formed in the main surface and having a first sidewall at one side, a second sidewall at the other side and a bottom wall in a cross-sectional view, an insulation layer formed on an inner wall of the trench, and a gate electrode embedded in the trench with the insulation layer between the trench and the gate electrode and having an upper end portion positioned at a bottom-wall side with respect to the main surface, a plurality of first-conductivity-type drift regions that are respectively formed in a region at the first sidewall side of the trench and in a region at the second sidewall side of the trench such as to face each other with the trench interposed therebetween in a surface layer portion of the main surface and that are positioned in a region at the main surface side with respect to the bottom wall, and a plurality of first-conductivity-type source/drain regions that are formed in surface layer portions of the plurality of drift regions, respectively.

    Chip resistor
    8.
    发明授权

    公开(公告)号:US10403420B2

    公开(公告)日:2019-09-03

    申请号:US15485640

    申请日:2017-04-12

    Applicant: ROHM CO., LTD.

    Abstract: A chip resistor including, a substrate having a main surface, a first resistance circuit formed at the main surface of the substrate, a second resistance circuit formed at the main surface of the substrate apart from the first resistance circuit, a common internal electrode formed at the main surface of the substrate and electrically connected to the first resistance circuit and the second resistance circuit, a first internal electrode formed at the main surface of the substrate and electrically connected to the first resistance circuit, a second internal electrode formed at the main surface of the substrate and electrically connected to the second resistance circuit, and a dummy resistance circuit formed in a region between the first resistance circuit and the second resistance circuit at the main surface of the substrate so as to be in an electrically floating state.

    CHIP COMPONENT AND METHOD OF PRODUCING THE SAME
    10.
    发明申请
    CHIP COMPONENT AND METHOD OF PRODUCING THE SAME 有权
    芯片组件及其制造方法

    公开(公告)号:US20140368965A1

    公开(公告)日:2014-12-18

    申请号:US14376417

    申请日:2013-01-08

    Applicant: ROHM CO., LTD.

    Abstract: [Subject] To provide a highly-reliable and small-size chip component, e.g., a chip resistor having an accurate resistance value.[Solution] The chip resistor (10) includes: a substrate (11); a plurality of resistor elements each having a resistive film portion (20) provided on the substrate (11) and an aluminum-containing interconnection film portion (21) provided in contact with the resistive film portion (20); electrodes (12, 13) provided on the substrate (11); and a plurality of fuses (F) each having an aluminum-containing interconnection film portion integral with the aluminum-containing interconnection film portion of the resistor element and disconnectably connecting the resistor element to the electrodes (12, 13).[Effect] The resistance of the chip resistor can be adjusted at a desired resistance value by selectively disconnecting desired ones of the fuses. Since the fuses are formed in a minute layout pattern from an aluminum-containing interconnection film, the processing accuracy is improved in the disconnecting step.

    Abstract translation: 提供高度可靠和小尺寸的芯片组件,例如具有精确电阻值的片式电阻器。 芯片电阻器(10)包括:衬底(11); 多个电阻元件,每个电阻元件具有设置在所述基板上的电阻膜部分和设置成与所述电阻膜部分接触的含铝互连膜部分; 设置在基板(11)上的电极(12,13); 和多个保险丝(F),每个保险丝具有与电阻器元件的含铝互连膜部分成一体的含铝互连膜部分,并且可拆卸地将电阻器元件连接到电极(12,13)。 [效果]通过选择性地断开所需的保险丝,可以将片式电阻器的电阻调节到期望的电阻值。 由于保险丝以含有铝的互连膜的分布图形式形成,所以在断开步骤中提高了加工精度。

Patent Agency Ranking