Abstract:
There is described herein a superconducting segment and method of making same comprising one or several layers with very high electrical resistivity, acting as a current flow diverter when the current transfers from the superconductor to the stabilizer. The purpose of this current flow diverter is: i) to increase the contact resistance between the superconductor and the stabilizer, by reducing the contact area, and ii) to force the current to flow along a specific path, so as to increase momentarily the current density in a specific portion of the stabilizer. The consequence of i) and ii) is that heat generated at the extremities of the normal zone is increased and spread over a longer length along the superconducting segment, which increases the NZPV and thus, the uniformity of the quench.
Abstract:
An electronic structure includes a first substrate having a first under bump metallization (UBM) region and a second UBM region formed thereon. One or more solder bumps is deposited onto the first UBM region. A downstop formed on the second UBM region is wider, shallower and more rigid than any one of the solder bumps formed on the first UBM region. A second substrate is joined to the first substrate by the one or more solder bumps located on the first UBM region, and a height of the downstop limits a distance between at least one of the first substrate and the second substrate, or between an object and at least one of the first substrate and the second substrate.
Abstract:
A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.
Abstract:
An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. The device further includes a magnet that applies a magnetic field to the loop, which produces an expulsion current in the loop that travels toward the second electrode in the first channel and toward the first electrode in the second channel. For a range of current magnitudes, when the magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
Abstract:
A quantum circuit device includes a qubit chip including a plurality of qubits and a plurality of flux tunable couplers. A plurality of fixed frequency qubits are arranged in in a lattice structure, wherein each pair of the plurality of fixed frequency qubits is coupled to one flux tunable coupler. A wiring layer is coupled to the qubit chip, and the wiring layer includes a loop constructed of a superconducting material that is inductively coupled to the flux tunable couplers. A flux bias line is constructed of a superconducting material that is different than the superconducting material of the loop, wherein the flux bias line is inductively coupled to both the loop and the flux tunable couplers.
Abstract:
A technique relates to a superconducting chip. Resonant units have resonant frequencies, and the resonant units are configured as superconducting resonators. Josephson junctions are in the resonant units, and one or more of the Josephson junctions have a shorted tunnel barrier.
Abstract:
A light-controlled superconductor uses electrons as carriers, which includes a light source and a sealed tube, wherein the sealed tube is made of glass or plastic. The sealed tube is filled with electron gas, and the light source produces incident light, and under the irradiation of the incident light, electrons will be forced to vibrate and behave similarly to vibrating electric dipoles, and emit secondary electromagnetic waves, so that the average distance between the electrons in the sealed tube is much smaller than the wavelength of the incident light, causing the vibrating electrons to be in a near-field of each other. When the electric field intensity direction of the incident light and the electric moments of two vibrating electrons are in the same radial straight line and are in the same direction, there exists an attractive force among the vibrating electrons.
Abstract:
A cryogenic electronic package includes a first superconducting multi-chip module (SMCM), a superconducting interposer, a second SMCM and a superconducting semiconductor structure. The interposer is disposed over and coupled to the first SMCM, the second SMCM is disposed over and coupled to the interposer, and the superconducting semiconductor structure is disposed over and coupled to the second SMCM. The second SMCM and the superconducting semiconductor structure are electrically coupled to the first SMCM through the interposer. A method of fabricating a cryogenic electronic package is also provided.
Abstract:
There is described herein a superconducting segment and method of making same comprising one or several layers with very high electrical resistivity, acting as a current flow diverter when the current transfers from the superconductor to the stabilizer. The purpose of this current flow diverter is: i) to increase the contact resistance between the superconductor and the stabilizer, by reducing the contact area, and ii) to force the current to flow along a specific path, so as to increase momentarily the current density in a specific portion of the stabilizer. The consequence of i) and ii) is that heat generated at the extremities of the normal zone is increased and spread over a longer length along the superconducting segment, which increases the NZPV and thus, the uniformity of the quench.