公开(公告)号：US06827987B2

公开(公告)日：2004-12-07

申请号：US09927698

申请日：2001-07-27

申请人： Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  William R. Harshbarger

发明人： Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  William R. Harshbarger

IPC分类号： H05H124

CPC分类号： C23C16/4581

摘要： Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.

摘要翻译： 本文提供的是一种在等离子体增强化学气相沉积工艺期间减少衬底上的静电电荷的方法，其包括将导电层沉积到设置在沉积室内的基座支撑板的顶表面上的步骤，其中导电层消散 在等离子体增强化学气相沉积工艺期间，在衬底的底表面上的静电荷。 还提供了使用本文公开的方法和导电基座在等离子体增强化学气相沉积工艺期间沉积薄膜的方法。

公开(公告)号：US06962732B2

公开(公告)日：2005-11-08

申请号：US09938435

申请日：2001-08-23

申请人： Tae Kyung Won ,  Takako Takehara ,  William R. Harshbarger

发明人： Tae Kyung Won ,  Takako Takehara ,  William R. Harshbarger

IPC分类号： C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  H01L21/312 ,  H01L21/316 ,  B05D5/12 ,  H05H1/24

CPC分类号： C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  Y10T428/26

摘要： Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

摘要翻译： 用于控制薄的有机硅酸盐膜沉积在基底上的厚度均匀性的方法，并且最终得到结果。 在可以通过CVD，PECVD，快速热处理等实现的膜沉积期间，控制衬底温度以建立特别适合于有机硅酸盐膜的沉积速率的极端温度敏感性的温度分布，例如沉积的那些 从TEOS作为源材料。

公开(公告)号：US08114484B2

公开(公告)日：2012-02-14

申请号：US11833983

申请日：2007-08-04

申请人： Ya-Tang Yang ,  Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  John M. White

发明人： Ya-Tang Yang ,  Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  John M. White

IPC分类号： H01H1/24 ,  C23C16/00

CPC分类号： H01J37/32357 ,  C23C16/24 ,  C23C16/345 ,  C23C16/5096 ,  H01J37/32091

摘要： Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.

摘要翻译： 提供了使用低温等离子体增强化学气相沉积（PECVD）工艺形成适用于晶体管制造的膜堆叠的方法。 在一个实施例中，该方法包括在PECVD室中提供衬底，在衬底上沉积双层SiNx膜，在SiNx膜上沉积双层非晶硅膜，以及在双层非晶体上沉积n掺杂硅膜 硅膜。 上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积。

公开(公告)号：US06858548B2

公开(公告)日：2005-02-22

申请号：US10125961

申请日：2002-04-18

申请人： Tae Kyung Won ,  Quanyuan Shang ,  William R. Harshbarger

发明人： Tae Kyung Won ,  Quanyuan Shang ,  William R. Harshbarger

IPC分类号： C23C16/40 ,  C23C16/509 ,  G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/31 ,  H01L21/469

CPC分类号： G02F1/1362 ,  C23C16/401 ,  C23C16/5096 ,  G02F1/136227 ,  H01L27/1248 ,  Y10T428/31663

摘要： A process for depositing a low dielectric constant layer (k

摘要翻译： 一种用于在平板显示器和平板显示器上沉积低介电常数层（k <3）的工艺。 该方法包括使一种或多种有机硅化合物与含氧化合物以约0.345W / cm 2至约1.265W / cm 2的RF功率水平反应。 平板显示器包括具有第一基板，沉积在第一基板上的多个屏障，第二基板，沉积在第二基板上的低介电常数层（k <3）的等离子体显示面板，以及多个接地电极 形成在阻挡层和电介质层之间。

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20080302303A1

公开(公告)日：2008-12-11

申请号：US11759599

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/00 ,  B05B1/14

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US08906813B2

公开(公告)日：2014-12-09

申请号：US13886175

申请日：2013-05-02

申请人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

发明人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54

CPC分类号： H01L21/0262 ,  C23C16/401 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/545 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率 以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

公开(公告)号：US08142606B2

公开(公告)日：2012-03-27

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：US07833885B2

公开(公告)日：2010-11-16

申请号：US12323872

申请日：2008-11-26

申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

公开(公告)号：US07754294B2

公开(公告)日：2010-07-13

申请号：US12215602

申请日：2008-06-25

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H05H1/24

CPC分类号： H01L21/3185

摘要： We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved.

摘要翻译： 我们已经发现，在沉积含硅薄膜期间控制PECVD沉积工艺参数的组合提供了改进的对表面驻波效应的控制。 通过最小化表面驻波效应，改善了其上沉积有薄膜的基板表面上的膜性质（特别是膜厚度）的均匀性。