-
公开(公告)号:US20220055936A1
公开(公告)日:2022-02-24
申请号:US17519903
申请日:2021-11-05
发明人: Takuju NAKAMURA
摘要: The method for manufacturing a plate glass is a method for manufacturing the plate glass having sides of at least 30 cm or more and a surface thereof on which a predetermined shape is formed. In the manufacturing method, the flat plate glass is heated to a temperature which is lower than a softening point and at which the heated flat plate glass is deformable by being pressed at a predetermined pressure or higher, the heated flat glass, which has been molded by pressing the flat plate glass with a die having a die structure for forming the predetermined shape, is cooled to the strain point while being held with the die. Further, in the manufacturing method, the pressing is performed with the die having a coefficient of thermal expansion whose difference from that of the plate glass is 2.0×10−6/K or less.
-
公开(公告)号:US11208346B2
公开(公告)日:2021-12-28
申请号:US15813882
申请日:2017-11-15
申请人: CORNING INCORPORATED
IPC分类号: C03C15/00 , C03B23/02 , C03B23/035 , C03C21/00 , C03C3/097
摘要: A process for forming a textured 3-D glass-based substrate includes texturing a first surface of a glass-based substrate and shaping the glass-based substrate into a three-dimensional shape. The surface profile of the substrate is non-planar. In some embodiments, texturing the first surface of the glass-based substrate provides the first surface with an average roughness of 10 nm to 2000 nm.
-
公开(公告)号:US10759147B2
公开(公告)日:2020-09-01
申请号:US16504051
申请日:2019-07-05
申请人: CORNING INCORPORATED
发明人: Thomas Michael Cleary , Sinue Gomez , Guangli Hu , Robert Anthony Schaut , Charlene Marie Smith , Natesan Venkataraman
IPC分类号: B32B17/06 , C03B23/02 , C03B17/02 , C03B17/06 , C03C3/087 , C03C3/091 , C03C3/093 , C03C3/097 , B32B7/02 , C03C3/083 , H05K1/03 , H05K1/09
摘要: A glass article includes a glass core layer and a glass cladding layer adjacent to the core layer. An average coefficient of thermal expansion (CTE) of the core layer is greater than an average CTE of the cladding layer. An effective 109.9 P temperature of the glass article is at most about 750° C.
-
公开(公告)号:US10450227B2
公开(公告)日:2019-10-22
申请号:US15080457
申请日:2016-03-24
申请人: SCHOTT AG
发明人: Oliver Muehlke , Martin Spier
IPC分类号: C03C23/00 , C03B23/02 , C03B32/02 , C03C3/083 , C03C10/00 , B23K26/00 , B23K26/352 , C03B25/02 , F24C15/10 , B23K103/16 , B23K103/18 , B23K103/00
摘要: A method is provided for producing a raised feature on a glass ceramic element, in which a glass or glass ceramic element is irradiated with electromagnetic radiation in a local region of the surface, the radiation passes through the element and is at least partially absorbed thereby so that the element heats up in the region of the irradiated electromagnetic radiation and is heated beyond a glass transition temperature. The irradiation is terminated after heating so that the heated region cools down to the temperature of material surrounding the local region. The heating causes a change in volume of the element, which brings about a local elevation in the surface that remains after the local region cools so that a surface deformation in the form of an elevation remains after cooling.
-
5.
公开(公告)号:US10357917B2
公开(公告)日:2019-07-23
申请号:US15028836
申请日:2014-10-16
IPC分类号: B29C61/00 , H01L41/113 , B82B3/00 , B32B3/28 , B32B3/30 , C03B23/02 , G01L1/16 , B28B17/00 , H01L21/302 , H01L21/3105 , B29K105/00
摘要: A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.
-
公开(公告)号:US20190152828A1
公开(公告)日:2019-05-23
申请号:US16097553
申请日:2017-04-27
摘要: The invention relates to a method for locally deforming a flat surface of a substrate made of glass or a glass-ceramic, and to an operating element that can be produced with the method. The method is characterised by the following method steps: applying heat exclusively within a locally limited region via the surface of the substrate by means of laser radiation, gas flame, infrared radiation, electrical microwaves or plasma discharge directed towards the surface of the substrate, in such a way that the substrate is softened at least on the surface within the locally limited region; applying a force acting on the softened surface within the locally limited region, such that the softened surface of the substrate is deformed within the region; and cooling the substrate to obtain a surface that is deformed and set within the local region.
-
公开(公告)号:US10202299B2
公开(公告)日:2019-02-12
申请号:US15730156
申请日:2017-10-11
发明人: Yoshinori Hasegawa , Koichi Mori , Hiroshi Naruse , Naoya Ishida , Hiroki Mori , Taisei Matsubushi , Akio Nakabayashi
IPC分类号: C03B23/02 , C03B33/09 , C03B35/16 , C03B33/023 , C03B33/033
摘要: Provided is a glass film ribbon manufacturing device (1), including: a transverse conveyance unit (4), which is configured to convey a glass film ribbon (G) in a transverse direction; and a cleaving unit (5), which is arranged on a conveyance path of the transverse conveyance unit (4), and is configured to cleave the glass film ribbon (G) along a preset cleaving line extending in a longitudinal direction, the transverse conveyance unit (4) including a wrinkle-smoothing unit (14) configured to smooth a wrinkle generated in the glass film ribbon (G) before the glass film ribbon (G) is cleaved by the cleaving unit (5).
-
公开(公告)号:US09912115B2
公开(公告)日:2018-03-06
申请号:US15173110
申请日:2016-06-03
IPC分类号: H01L21/00 , H01L21/30 , H01L23/52 , H01S5/022 , H01L33/58 , H01S5/40 , C03B23/02 , C03B23/20 , H01L23/00 , H01S5/028 , H01L33/00 , H01L33/56
CPC分类号: H01S5/02208 , C03B23/02 , C03B23/20 , H01L24/32 , H01L33/0095 , H01L33/56 , H01L33/58 , H01L2224/32145 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12043 , H01L2924/16152 , H01L2933/0033 , H01L2933/0058 , H01S5/022 , H01S5/0222 , H01S5/02276 , H01S5/02288 , H01S5/02296 , H01S5/028 , H01S5/40 , H01S5/4025 , H01L2924/00014 , H01L2924/00
摘要: The invention relates to methods of producing a cap substrate, to methods of producing a packaged radiation-emitting device at the wafer level, and to a radiation-emitting device. By producing a cap substrate, providing a device substrate in the form of a wafer including a multitude of radiation-emitting devices, arranging the substrates one above the other such that the substrates are bonded along an intermediate bonding frame, and dicing the packaged radiation-emitting devices, improved packaged radiation-emitting devices are provided which are advantageously arranged within a cavity free from organics and can be examined, still at the wafer level, in terms of their functionalities in a simplified manner prior to being diced.
-
公开(公告)号:US09903046B2
公开(公告)日:2018-02-27
申请号:US11745817
申请日:2007-05-08
IPC分类号: H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , C30B25/02 , C03B23/02 , H01L21/02 , H01L21/306 , C30B29/36
CPC分类号: C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要: Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
-
公开(公告)号:US20170212281A1
公开(公告)日:2017-07-27
申请号:US15318529
申请日:2014-10-15
申请人: MPNICS CO., LTD.
发明人: Sang Do KANG , Hyung Jun KWON , Seung Jun BAEK , Seung Keun OH
CPC分类号: G02B3/0012 , B29D11/00298 , C03B11/082 , C03B23/02 , C03C17/02 , C03C2217/21 , C03C2218/151 , G02B3/00 , G02B3/0031
摘要: A method of manufacturing a microarray lens having a plurality of microlenses includes preparing a substrate having a plurality of depressions on a side, and forming a lens layer corresponding to shapes of the depressions by depositing a lens raw material on the side of the substrate on which the depressions are formed. The method is able to form a plurality of depression in precise aspheric shapes on a substrate and to easily adjust or change the number and the gaps of lenses by forming depressions on a substrate using a probe and depositing a lens layer on the substrate with the depressions.
-
-
-
-
-
-
-
-
-