METHOD FOR MANUFACTURING PLATE GLASS

    公开(公告)号:US20220055936A1

    公开(公告)日:2022-02-24

    申请号:US17519903

    申请日:2021-11-05

    发明人: Takuju NAKAMURA

    IPC分类号: C03B11/12 C03B11/08 C03B23/02

    摘要: The method for manufacturing a plate glass is a method for manufacturing the plate glass having sides of at least 30 cm or more and a surface thereof on which a predetermined shape is formed. In the manufacturing method, the flat plate glass is heated to a temperature which is lower than a softening point and at which the heated flat plate glass is deformable by being pressed at a predetermined pressure or higher, the heated flat glass, which has been molded by pressing the flat plate glass with a die having a die structure for forming the predetermined shape, is cooled to the strain point while being held with the die. Further, in the manufacturing method, the pressing is performed with the die having a coefficient of thermal expansion whose difference from that of the plate glass is 2.0×10−6/K or less.

    Reduction of carrot defects in silicon carbide epitaxy

    公开(公告)号:US09903046B2

    公开(公告)日:2018-02-27

    申请号:US11745817

    申请日:2007-05-08

    摘要: Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.