公开(公告)号：US20240360590A1

公开(公告)日：2024-10-31

申请号：US18140508

申请日：2023-04-27

申请人： Applied Materials, Inc.

发明人： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Lori WASHINGTON

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/4583 ,  C30B25/10 ,  C30B25/12

摘要： Embodiments of the present disclosure relate to gas exhaust frames including pathways having size variations, for use in a substrate processing chamber, and related apparatus and methods. In one or more embodiments, a processing chamber includes a chamber body, and a window. The processing chamber includes one or more heat sources, a substrate support, a liner, and a pre-heat ring. The processing chamber includes one or more gas inlets, and a first set of exhaust pathways positioned on a first side of a reference plane. The first set of exhaust pathways have a first cross-sectional area gradient that increases along a first direction. The processing chamber includes a second set of exhaust pathways positioned on a second side of the reference plane. The second set of exhaust pathways have a second cross-sectional area gradient that increases along a second direction that is opposite of the first direction.

公开(公告)号：US20240360589A1

公开(公告)日：2024-10-31

申请号：US18141428

申请日：2023-04-30

申请人： ThinSiC Inc.

发明人： Tirunelveli Subramaniam Ravi

IPC分类号： C30B25/12 ,  C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  H01L21/687

CPC分类号： C30B25/12 ,  C23C16/325 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/4587 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  H01L21/68771

摘要： A batch mode SiC (Silicon Carbide) epitaxial reactor comprising an inlet gas manifold, an inlet heat exchanger coupled to the inlet gas manifold, a plurality of removable vertical susceptors configured to couple to the inlet heat exchanger, a plurality of exhaust heat exchangers coupled to the plurality of removable vertical susceptors, and a scrubber coupled to the plurality of exhaust heat exchangers. Each removable vertical susceptor is configured to hold at least two SiC wafers tilted in a vertical fixed position relative to a flow of heated gases output by the inlet heat exchanger. The plurality of exhaust heat exchangers are configured to heat hydrogen gas. The heated hydrogen gas is configured to couple to the inlet heat exchanger to heat gases provided through the inlet gas manifold to grow SiC on the plurality of SiC wafers in the plurality of removable vertical susceptors thereby reducing energy consumption.

公开(公告)号：US12077880B2

公开(公告)日：2024-09-03

申请号：US17243158

申请日：2021-04-28

申请人： Applied Materials, Inc.

发明人： Zhepeng Cong ,  Nyi Oo Myo ,  Tao Sheng ,  Yong Zheng

IPC分类号： C30B25/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B41J2/16 ,  G01B11/06 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

CPC分类号： C30B25/16 ,  C23C14/50 ,  C23C14/541 ,  C23C14/547 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B23/002 ,  C30B23/063 ,  C30B25/10 ,  C30B25/12 ,  G01N21/55 ,  B01J2219/00443 ,  B41J2/1642 ,  G01B11/0625 ,  G01N2201/062 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

摘要： Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US20240274448A1

公开(公告)日：2024-08-15

申请号：US18108432

申请日：2023-02-10

申请人： Applied Materials, Inc.

发明人： Zhepeng CONG ,  Masato ISHII ,  Ernesto J. ULLOA ,  Shu-Kwan LAU ,  Bharath Bopanna PUTTICHANDA ,  Ashur J. ATANOS ,  Andrew KRETZSCHMAR

IPC分类号： H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/67196 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/67167

摘要： The present disclosure relates to transfer chambers, systems, and related components and methods, for pre-heating and pre-cooling substrate transfer apparatus. In one or more embodiments, the transfer apparatus are pre-heated and pre-cooled in relation to transferring substrates for substrate processing operations as part of semiconductor manufacturing. In one or more embodiments, a transfer chamber applicable for use in semiconductor manufacturing includes an internal volume, one or more sidewalls at least partially defining the internal volume, and a transfer apparatus disposed in the internal volume. The transfer apparatus includes one or more links, one or more motors configured to pivot the one or more links, and one or more substrate holders coupled to the one or more links. The transfer chamber includes a window that includes a transparent material, and one or more heat sources configured to direct heat into the internal volume through the window.

公开(公告)号：US20240254627A1

公开(公告)日：2024-08-01

申请号：US18122484

申请日：2023-03-16

申请人： Applied Materials, Inc.

发明人： Raja Murali DHAMODHARAN ,  Kalaivanan MOHANADASS ,  Aniketnitin PATIL ,  Martin Jeffrey SALINAS ,  Shu-Kwan LAU

IPC分类号： C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC分类号： C23C16/45563 ,  C23C16/4586 ,  C30B25/12 ,  C30B25/14

摘要： Embodiments of the present disclosure relate to injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing operations. In one or more embodiments, the liners facilitate gas flow uniformity in batch processing. In one or more embodiments, a liner includes a plurality of inlet openings on an inlet side, the plurality of inlet openings extending into an outer face of the liner. The plurality of inlet openings include a plurality of first inlet openings that include a first row extending into a first side face, and a second row extending into a second side face. The plurality of inlet openings include a plurality of second inlet openings extending between an inner face and the outer face. The liner includes one or more outlet openings on an outlet side. The outlet side opposes the inlet side. The one or more outlet openings extend into the inner face.

公开(公告)号：US20240240319A1

公开(公告)日：2024-07-18

申请号：US18562478

申请日：2023-02-06

申请人： CV Research Corporation

发明人： Hiroshi KAWAURA

IPC分类号： C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C30B25/12 ,  C30B25/14

CPC分类号： C23C16/4584 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45563 ,  C30B25/12 ,  C30B25/14

摘要： A film deposition apparatus having a plurality of susceptors, each of which has spot facings as a substrate mounting surface on a slope. The susceptors are arranged side by side horizontally and radially on a susceptor holder in a doughnut-shaped concave space inside a reactor. Gas supply tubes are provided on a lid in the circumferential direction in the following order: a purge gas supply tube, a precursor-containing gas supply tube, a purge gas supply tube and an oxidant-containing gas supply tube. Gases supplied to the reactor from gas outlet holes pass through a V-shaped groove space between the two susceptors and are exhausted from the bottom of the reactor. ALD deposition is performed by rotating the susceptor holder in the circumferential direction.

公开(公告)号：US20240213330A1

公开(公告)日：2024-06-27

申请号：US18433872

申请日：2024-02-06

申请人： Taiwan Semiconductor Manfacturing Co., Ltd.

发明人： Chien-Wei Lee ,  Hsueh-Chang Sung ,  Yen-Ru Lee

IPC分类号： H01L29/165 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16 ,  H01L21/02 ,  H01L21/324 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/165 ,  C30B25/10 ,  C30B25/12 ,  C30B25/165 ,  H01L21/02315 ,  H01L21/02658 ,  H01L21/02661 ,  H01L21/3247 ,  H01L29/41791 ,  H01L29/66636 ,  H01L29/66795

摘要： Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.

公开(公告)号：US20240183036A1

公开(公告)日：2024-06-06

申请号：US18511096

申请日：2023-11-16

申请人： PJP TECH INC.

发明人： Bum Ho CHOI ,  Kyung Shin PARK ,  Hyun Ho KWON ,  Dong Hyoun KIM ,  Suk Ho LIM ,  Jong Wook JEONG ,  Seung Soo LEE

IPC分类号： C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC分类号： C23C16/45574 ,  C23C16/4583 ,  C30B25/12 ,  C30B25/14

摘要： Provided are an epitaxial growth apparatus and a multi-layer gas supply module used therefor, the epitaxial growth apparatus including: a reaction chamber; a susceptor positioned in the reaction chamber and configured to seat a wafer thereon; and a multi-layer gas supply module configured to supply a gas to the reaction chamber to form an epitaxial layer on the wafer, wherein the multi-layer gas supply module includes an injector including ports of a plurality of layers, each of which discharges a different gas for each layer, among the ports of the plurality of layers, the ports of each layer including a center port corresponding to a central region of the wafer, and a pair of edge ports corresponding to both edge regions of the wafer, and a flow distribution unit configured to distribute gas flows input to the center port and the edge port among the ports of each layer independently from each other.

公开(公告)号：US11984346B2

公开(公告)日：2024-05-14

申请号：US18046400

申请日：2022-10-13

申请人： SUMCO Corporation

发明人： Kazuhiro Narahara

IPC分类号： H01L21/68 ,  C23C16/458 ,  C30B25/12 ,  C30B29/36 ,  H01L21/02 ,  H01L21/687 ,  H01L29/16

CPC分类号： H01L21/68785 ,  C23C16/4583 ,  C30B25/12 ,  C30B29/36 ,  H01L21/02634 ,  H01L29/16

摘要： Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer. A susceptor 100 is provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90° periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0°, the radial distance L is a minimum value L1 at 90°, 180°, and 270°; and the radial distance L is a maximum value L2 at 45°, 135°, 225°, and 315°. Accordingly, the pocket width Lp also varies in conformance with the variations of the radial distance L. The opening edge 110C describes four elliptical arcs being convex radially outward when the susceptor 100 is viewed from above.

公开(公告)号：US11846039B2

公开(公告)日：2023-12-19

申请号：US17417496

申请日：2019-09-11

申请人： SUMCO CORPORATION

发明人： Kazuhiro Narahara ,  Masayuki Tsuji ,  Haku Komori

IPC分类号： C30B25/12 ,  C30B29/06 ,  C23C16/24 ,  C23C16/458 ,  C30B25/20

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/20 ,  Y10T117/00

摘要： A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.