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公开(公告)号：US11594444B2
公开(公告)日：2023-02-28
申请号：US17141610
申请日：2021-01-05
申请人： ASM IP HOLDING B.V.
IPC分类号： C30B25/10 , H01L21/687 , H01L21/02 , C23C16/458 , C30B25/12 , C30B29/06 , C23C16/24 , H01L21/67
摘要： The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.
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公开(公告)号：US20220411955A1
公开(公告)日：2022-12-29
申请号：US17844148
申请日：2022-06-20
摘要： The present invention relates to a method for reducing lateral growth as well as growth of the bottom surface of crystals in a crystal growing process, wherein before the crystal seed undergoes a growing process the method includes a step of wrapping the crystal seed with metal foil so that all the side surfaces as well as the bottom surface of the crystal seed are surrounded by the foil.
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公开(公告)号：US11519096B2
公开(公告)日：2022-12-06
申请号：US16512669
申请日：2019-07-16
申请人： SHOWA DENKO K.K.
发明人： Shunsuke Noguchi
IPC分类号： C30B35/00 , C30B25/12 , C23C16/458 , C23C16/32 , C30B29/36
摘要： A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.
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公开(公告)号：US11501996B2
公开(公告)日：2022-11-15
申请号：US16641996
申请日：2017-08-31
申请人： SUMCO Corporation
发明人： Kazuhiro Narahara
IPC分类号： H01L21/68 , H01L21/687 , C23C16/458 , C30B25/12 , C30B29/36 , H01L21/02 , H01L29/16
摘要： Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer.
A susceptor 100 is provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90° periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0°, the radial distance L is a minimum value L1 at 90°, 180°, and 270°; and the radial distance L is a maximum value L2 at 45°, 135°, 225°, and 315°. Accordingly, the pocket width Lp also varies in conformance with the variations of the radial distance L. The opening edge 110C describes four elliptical arcs being convex radially outward when the susceptor 100 is viewed from above.-
公开(公告)号：US20220235489A1
公开(公告)日：2022-07-28
申请号：US17613653
申请日：2020-05-01
发明人： Yoshihiro KUBOTA , Kazutoshi NAGATA
摘要： The group III compound substrate manufacturing method of the present invention is a method for manufacturing a group III compound substrate by growing a group III compound crystal (1) by vapor phase epitaxy on a seed crystal (3) placed and fixed on a susceptor (2), the method comprising using a cleavable and separable material for at least one of the susceptor (2) and the seed crystal (3). A group III compound substrate manufactured by the group III compound substrate manufacturing method of the present invention is also provided. The present invention can provide the group III compound substrate manufacturing method which can manufacture a large-sized GaN crystal substrate of higher quality at a low cost while taking advantage of the high film forming rate of the vapor phase epitaxy method, and can provide a substrate manufactured by the method.
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公开(公告)号：US11339478B2
公开(公告)日：2022-05-24
申请号：US16331215
申请日：2017-09-18
申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY , KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
发明人： Xiaohang Li , Kuang-Hui Li , Hamad S. Alotaibi
IPC分类号： C23C16/458 , C30B25/12 , C23C16/46
摘要： A susceptor device for a chemical vapor deposition (CVD) reactor including metal organic CVD (MOCVD) used in the semiconductor industry. The susceptor device particularly is used with induction heating and includes a horizontal plate adapted for holding one or more wafers and a vertical rod around which the induction heating coils are disposed. A screw system and an insulator can further be used. This design helps prevent undesired levitation and allows for the gas injectors of the reactors to be placed closer to the wafer for deposition during high-temperature deposition processes at susceptor surface temperatures of about 1500° C. or higher.
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公开(公告)号：US11302565B2
公开(公告)日：2022-04-12
申请号：US16309014
申请日：2017-07-03
申请人： SILTRONIC AG
发明人： Patrick Moos , Hannes Hecht
IPC分类号： H01L21/687 , C30B25/12 , C30B29/06
摘要： A device for handling a semiconductor wafer in an epitaxy reactor has a susceptor; longitudinal holes extending through the susceptor; a wafer lifting shaft; wafer lifting pins guided through the longitudinal holes; a susceptor carrying shaft; susceptor carrying arms; susceptor support pins; guide sleeves anchored in the susceptor carrying arms; and guide elements protruding from the guide sleeves which, at upper ends, have bores into which wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by the wafer lifting shaft.
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公开(公告)号：US11299821B2
公开(公告)日：2022-04-12
申请号：US16781261
申请日：2020-02-04
发明人： Yoshiaki Daigo , Akio Ishiguro , Hideki Ito
IPC分类号： H01L21/44 , C30B25/12 , C23C16/32 , C23C16/458 , C23C16/46 , C23C28/04 , C30B25/10 , C30B25/14 , C30B29/36 , C30B29/68 , H01L21/02 , H01L29/16 , H01L29/167 , C30B25/16 , C23C16/455
摘要： A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.
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公开(公告)号：US11282715B2
公开(公告)日：2022-03-22
申请号：US16437996
申请日：2019-06-11
IPC分类号： H01L21/32 , H01L21/683 , H01L21/67 , H01L21/302 , H01L21/687 , C30B25/12 , H01L21/322
摘要： Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
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公开(公告)号：US20220068700A1
公开(公告)日：2022-03-03
申请号：US17458768
申请日：2021-08-27
IPC分类号： H01L21/687 , C23C16/458 , C30B25/12
摘要： A substrate reactor with centering pin for epitaxial deposition includes a vacuum chamber and a tube configured to rotate in the vacuum chamber around a tube geometrical center axis. A substrate carrier forming a pocket dimensioned for holding a substrate on a top surface includes an aperture that is centrally located on a bottom surface. The substrate carrier is positioned on and in contact with a top surface of the tube. A centering pin is positioned along a geometrical center axis of rotation of the substrate carrier. The centering pin has a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.
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