公开(公告)号：US12116695B2

公开(公告)日：2024-10-15

申请号：US18046953

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/355 ,  H01L21/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/024 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US20230349071A1

公开(公告)日：2023-11-02

申请号：US18016912

申请日：2021-06-09

申请人： SICRYSTAL GMBH

发明人： Michael VOGEL ,  Erwin SCHMITT ,  Arnd-Dietrich WEBER ,  Ralph-Uwe BARZ ,  Dominik BANNSPACH

IPC分类号： C30B29/40 ,  C30B29/48 ,  C30B33/00 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B29/40 ,  C30B29/48 ,  C30B33/00

摘要： Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention provides monocrystalline semiconductor semi-finished product and substrates having a predetermined orientation of its crystal structure relative to a central axis and a at least partially curved lateral surface of the semi-finished product or substrate that reduces or even eliminates the occurrence of cracks during mechanical processing, and a method of producing such semiconductor semi-finished products and/or substrates. In the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes are inclined relative to the central axis.

公开(公告)号：US11795574B2

公开(公告)日：2023-10-24

申请号：US18046944

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/024 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US11761116B2

公开(公告)日：2023-09-19

申请号：US18046945

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/024 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US11756788B2

公开(公告)日：2023-09-12

申请号：US16926850

申请日：2020-07-13

申请人： International Business Machines Corporation

发明人： Philipp Staudinger ,  Heinz Schmid

IPC分类号： C30B25/04 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/161 ,  H01L29/16 ,  C30B25/02 ,  C30B29/48 ,  C30B29/36 ,  C30B29/40

CPC分类号： H01L21/02645 ,  C30B25/02 ,  C30B25/04 ,  C30B29/48 ,  H01L21/02647 ,  H01L29/04 ,  H01L29/161 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  C30B29/36 ,  C30B29/40

摘要： A method for fabricating a metastable crystalline structure is provided. The method includes providing a base substrate, wherein the base substrate comprises an insulating layer. The method further includes providing a metastable seed crystal on the base substrate, wherein the metastable seed crystal has a predefined metastable crystal phase or a predefined metastable composition. The method further includes forming a template structure above the base substrate, wherein the template structure covers at least a part of the metastable seed crystal. The method further includes growing the metastable crystalline structure with the predefined metastable crystal phase or the predefined metastable composition of the seed crystal inside the template structure. The growing of the metastable crystalline structure is nucleated from the seed crystal. Crystalline structures produced by the methods described herein are also provided.

公开(公告)号：US20230093467A1

公开(公告)日：2023-03-23

申请号：US18052597

申请日：2022-11-04

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC分类号： C30B29/48 ,  C01G9/08 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  H01L51/50 ,  H01L33/28

摘要： A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US20230038745A1

公开(公告)日：2023-02-09

申请号：US17937840

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  C30B29/44 ,  H01L21/02 ,  G02F1/355 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US11384448B1

公开(公告)日：2022-07-12

申请号：US17118848

申请日：2020-12-11

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US11299820B2

公开(公告)日：2022-04-12

申请号：US15661903

申请日：2017-07-27

申请人： United States of America as represented by the Administrator of NASA

发明人： Sang H. Choi ,  Adam J. Duzik

IPC分类号： C30B23/06 ,  H01L21/02 ,  C30B29/52 ,  C30B29/20 ,  C30B23/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  C30B29/48

摘要： Systems, methods, and devices of the various embodiments may provide a mechanism to enable the growth of a rhombohedral epitaxy at a lower substrate temperature by energizing the atoms in flux, thereby reducing the substrate temperature to a moderate level. In various embodiments, sufficiently energized atoms provide the essential energy needed for the rhombohedral epitaxy process which deforms the original cubic crystalline structure approximately into a rhombohedron by physically aligning the crystal structure of both materials at a lower substrate temperature.

公开(公告)号：US11143459B1

公开(公告)日：2021-10-12

申请号：US16838076

申请日：2020-04-02

申请人： Mainstream Engineering Corporation

发明人： Brian P Tucker ,  Joshua D. Sole ,  Justin J. Hill ,  Robert P. Scaringe

IPC分类号： F28D15/00 ,  B44C1/22 ,  C23C16/30 ,  C23C16/56 ,  C30B25/02 ,  C30B29/48 ,  C30B33/08 ,  F28D21/00 ,  B64C1/14 ,  F42B15/34

摘要： A window assembly heat transfer system is disclosed in which a window member has a selected transparency to monitored or sensed electromagnetic wavelengths. One or more passages are provided in the window member for flowing a single-phase or two-phase heat transfer fluid. A mechanism allows either evaporation or condensation of the fluid and/or balancing of a flow of the fluid within the passages. In one embodiment, the window assembly can be made by producing passages in a top surface of a first single plate, optionally producing passages in a bottom surface of a second single plate and bonding the top surface of the first plate to a bottom surface of a second single plate to form the window member with the passage or passages. In another embodiment, the window assembly can be made by providing a core around which the window member material is grown and thereafter removing the core to produce the passage or passages.