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公开(公告)号：US12055860B2
公开(公告)日：2024-08-06
申请号：US18366097
申请日：2023-08-07
发明人： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
IPC分类号： G03F7/00 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544
CPC分类号： G03F7/70633 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544 , H01L2223/54426
摘要： An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号：US12055850B2
公开(公告)日：2024-08-06
申请号：US18297636
申请日：2023-04-09
摘要： A circuit layout patterning method includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a width of the reference pattern and a width of the beta pattern; transferring the design pattern to the shielding layer if a difference between the width of the reference patterned and the width of the beta pattern is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.
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公开(公告)号：US12044977B2
公开(公告)日：2024-07-23
申请号：US18359447
申请日：2023-07-26
发明人： Peter Yu , Chih-Tung Hsu , Kevin Wang , Chih-Chia Hu , Roger Chen
CPC分类号： G03F7/70475 , G03F1/38 , G03F1/42 , G03F1/70
摘要： Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.
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公开(公告)号：US12025911B2
公开(公告)日：2024-07-02
申请号：US18142223
申请日：2023-05-02
申请人： HOYA CORPORATION
发明人： Kazuhiro Hamamoto , Tsutomu Shoki
CPC分类号： G03F1/24 , G03F1/42 , G03F7/2004
摘要： A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US12021040B2
公开(公告)日：2024-06-25
申请号：US18314433
申请日：2023-05-09
发明人： Hyun Chul Lee , Hyun Jin Chang , Sung Hoon Hong , Young Je Woo
IPC分类号： H01L23/544 , G03F1/42 , G03F7/00 , G03F7/20 , H01L21/66
CPC分类号： H01L23/544 , G03F1/42 , G03F7/20 , G03F7/70633 , G03F7/70683 , H01L22/12 , H01L2223/54426
摘要： An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.
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公开(公告)号：US20240170504A1
公开(公告)日：2024-05-23
申请号：US18422006
申请日：2024-01-25
发明人： Dong Hee SHIN , Geun Ho LEE , Yong Hee LEE
CPC分类号： H01L27/1288 , G03F1/42 , G03F1/70 , G03F7/0007 , G03F7/2022 , H01L23/544 , H01L2223/54493
摘要： A photomask according to an exemplary embodiment includes: a mask substrate; and a first test pattern and a second test pattern disposed along a first edge of the mask substrate, wherein the first test pattern has a first outer shape and a first inner shape, the second test pattern has a second outer shape, and the second outer shape of the second test pattern is larger than the first inner shape of the first test pattern and smaller than the first outer shape of the first test pattern.
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公开(公告)号：US11977246B2
公开(公告)日：2024-05-07
申请号：US18120520
申请日：2023-03-13
CPC分类号： G02B5/1857 , G03F1/42 , G03F7/201 , G03F7/70775 , G03F7/2002
摘要： A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.
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公开(公告)号：US11916022B2
公开(公告)日：2024-02-27
申请号：US17834235
申请日：2022-06-07
发明人： Yeong-Jyh Lin , Ching I Li , De-Yang Chiou , Sz-Fan Chen , Han-Jui Hu , Ching-Hung Wang , Ru-Liang Lee , Chung-Yi Yu
IPC分类号： H01L23/544 , G03F1/42 , G03F1/70 , H01L21/027 , H01L21/66 , H01L21/683
CPC分类号： H01L23/544 , G03F1/42 , G03F1/70 , H01L21/0274 , H01L21/6835 , H01L22/20 , H01L2221/68309 , H01L2223/54426
摘要： Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.
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公开(公告)号：US20240027921A1
公开(公告)日：2024-01-25
申请号：US18350067
申请日：2023-07-11
发明人： TOSHIKI IWAI , YUICHI FUJITA , SHUN TODA , YASUYUKI UNNO
CPC分类号： G03F7/70683 , G03F7/70425 , G03F7/091 , G03F7/70091 , G03F7/702 , G03F1/42
摘要： Detection device detects relative position between overlapping first and second marks. The device includes illumination system configured to illuminate the first and second marks with unpolarized illumination light, detection system having image sensor and configured to form image on imaging surface of the image sensor from diffracted lights from the first and second marks. The first and second marks are configured to form, on the imaging surface, optical information representing the relative position in first or second direction. Light blocking body arranged on pupil surface of the detection system includes first light blocking portion crossing the optical axis of the detection system in direction conjugate to the first direction and second light blocking portion crossing the optical axis of the detection system in fourth direction conjugate to the second direction.
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公开(公告)号：US20240027890A1
公开(公告)日：2024-01-25
申请号：US18180210
申请日：2023-03-08
发明人： Hyungjong Bae , Hyun Jung Hwang , Heebom Kim , Seong-Bo Shim , Seungyoon Lee , Woo-Yong Jung , Chan Hwang
摘要： A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.
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