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    IN VACUUM OPTICAL WAFER HEATER FOR CRYOGENIC PROCESSING
    2.
    发明申请
    IN VACUUM OPTICAL WAFER HEATER FOR CRYOGENIC PROCESSING 审中-公开
    真空加热用真空加热器

    公开(公告)号：WO2011084489A1

    公开(公告)日：2011-07-14

    申请号：PCT/US2010/060520

    申请日：2010-12-15

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  FISH, Roger, B. ,  KRAMPERT, Jeffrey, E.

    Inventor： FISH, Roger, B. ,  KRAMPERT, Jeffrey, E.

    IPC: H01L21/00

    CPC classification number: H01L21/67213 ,  H01L21/67115 ,  H01L21/67196

    Abstract: A vacuum assembly used for warming processed substrates above the dew point to prevent unwanted moisture on the processed substrate surfaces as well as reducing negative impact on manufacturing throughput The vacuum assembly includes a processing chamber, a substrate handling robot, and a heater which may be an optical heater. The processing chamber is configured to cryogenically process one or more substrates. The transfer chamber is connected to the processing chamber and houses the substrate handling robot. The substrate handling robot is configured to displace one or more substrates from the processing chamber to the transfer chamber. The heater is connected to the transfer chamber above the substrate handling robot such that the heater emits energy incident on the substrate when the substrate handling robot displaces the substrate in the transfer chamber.

    Abstract translation: 一种真空组件，用于将处理过的基材加热到露点以上，以防止处理的基材表面上的不希望的湿气，以及减少对制造通量的负面影响。真空组件包括处理室，基材处理机器人和加热器，其可以是 光学加热器 处理室被配置为低温处理一个或多个基板。 传送室连接到处理室并容纳基板处理机器人。 衬底处理机器人构造成将一个或多个衬底从处理室移动到传送室。 加热器连接到基板处理机器人上方的传送室，使得当基板处理机器人移动传送室中的基板时，加热器发射入射到基板上的能量。

    COATING METHODS AND APPARATUS
    3.
    发明申请
    COATING METHODS AND APPARATUS 审中-公开
    涂层方法和设备

    公开(公告)号：WO2011066532A2

    公开(公告)日：2011-06-03

    申请号：PCT/US2010058319

    申请日：2010-11-30

    Applicant: UNITED TECHNOLOGIES CORP ,  NEAL JAMES W ,  LATOUR ROBERT F ,  ZIMMERMAN BENJAMIN J

    Inventor： NEAL JAMES W ,  LATOUR ROBERT F ,  ZIMMERMAN BENJAMIN J

    IPC: B05B5/03 ,  B05B13/02 ,  B05D3/00

    CPC classification number: C23C14/02 ,  C23C14/024 ,  C23C14/541 ,  C23C14/566 ,  H01L21/67173 ,  H01L21/67213

    Abstract: A coating apparatus comprises a coating chamber for coating the articles. The at least one preheat chamber is coupled to the coating chamber. The at least one loading station has a proximal end connectable to at least one of the preheat chambers when in an installed position at a distal end of the preheat chamber. The loading station further includes a carrier for carrying the articles and a drive system. The drive system is positioned to move the carrier between: a loading/unloading position of the carrier in the loading station; a preheat position of the carrier in the preheat chamber to which the loading station is connected; and a deposition position of the carrier in the coating chamber. A gas source is connected to the preheat chamber.

    Abstract translation: 涂布设备包括用于涂布物品的涂布室。 至少一个预热室被连接到涂覆室。 当处于预热室远端的安装位置时，至少一个装载站具有可连接到至少一个预热室的近端。 装载站还包括用于运送物品的载体和驱动系统。 驱动系统定位成在下列位置之间移动托架：装载站中托架的装载/卸载位置; 承载器在装载站连接到的预热室中的预热位置; 以及载体在涂布室中的沉积位置。 气源连接到预热室。

    HYBRID WAFER -HOLDING PIN
    5.
    发明申请
    HYBRID WAFER -HOLDING PIN 审中-公开
    混合波形标签

    公开(公告)号：WO2007100873A3

    公开(公告)日：2008-05-15

    申请号：PCT/US2007005201

    申请日：2007-02-28

    Applicant: IBIS TECHNOLOGY CORP ,  LEAVITT WILLIAM ,  RICHARDS STEVEN

    Inventor： LEAVITT WILLIAM ,  RICHARDS STEVEN

    IPC: C23C14/50 ,  C23C14/56 ,  H01J37/20 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687

    CPC classification number: H01L21/68757 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2007 ,  H01L21/67103 ,  H01L21/67213 ,  H01L21/68728

    Abstract: Wafer-holding structures formed from thermosetting resins are disclosed for use in semiconductor processing including, for example, SIMOX wafer processing. In one embodiment a thermosetting resin pin is disclosed that is adapted to receive a wafer edge, and is coupled with a wafer holder assembly. The pin can be filled with a conductive material to provide an electrical pathway between the wafer and the wafer holder assembly, which can be coupled to a ground. This arrangement provides a conductive path for inhibiting electrical discharges from the wafer during the ion implantation process. The pin exhibits thermal isolation characteristics and sufficient hardness so as to not effect localized thermal dissipation of the wafer, yet is sufficiently soft so as to not mark or otherwise damage the wafer. At least a portion of the distal portion of the pin comprises graphite, thereby reducing wafer- rotation during ion implantation while maintaining the desired overall thermal signature provided by the thermosetting resin.

    Abstract translation: 公开了由热固性树脂形成的晶片保持结构用于半导体处理，包括例如SIMOX晶片处理。 在一个实施例中，公开了一种适于接收晶片边缘并且与晶片保持器组件耦合的热固性树脂引脚。 引脚可以填充导电材料，以在晶片和晶片保持器组件之间提供可以耦合到地面的电路径。 这种布置提供用于在离子注入过程期间抑制来自晶片的放电的导电路径。 针具有热隔离特性和足够的硬度，从而不会影响晶片的局部散热，但是其足够柔软以便不会对晶片造成损伤或以其它方式损坏晶片。 销的远端部分的至少一部分包括石墨，从而在离子注入期间减少晶片旋转，同时保持由热固性树脂提供的期望的总体热特性。

    TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION
    7.
    发明申请
    TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 审中-公开
    低温离子植入技术

    公开(公告)号：WO2008020972A2

    公开(公告)日：2008-02-21

    申请号：PCT/US2007/016807

    申请日：2007-07-26

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  ENGLAND, Jonathan, Gerald ,  WALTHER, Steven, R. ,  MUKA, Richard, S. ,  BLAKE, Julian ,  MURPHY, Paul, J. ,  LIEBERT, Reuel, B.

    Inventor： ENGLAND, Jonathan, Gerald ,  WALTHER, Steven, R. ,  MUKA, Richard, S. ,  BLAKE, Julian ,  MURPHY, Paul, J. ,  LIEBERT, Reuel, B.

    CPC classification number: H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    Abstract translation: 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站， 冷却晶片进行离子注入工艺。

    WAFER TREATMENT SYSTEM HAVING LOAD LOCK AND BUFFER
    8.
    发明申请
    WAFER TREATMENT SYSTEM HAVING LOAD LOCK AND BUFFER 审中-公开
    具有负载锁定和缓冲器的波浪处理系统

    公开(公告)号：WO2004107412A3

    公开(公告)日：2005-01-20

    申请号：PCT/US2004016074

    申请日：2004-05-21

    Applicant: AXCELIS TECH INC ,  MITCHELL ROBERT ,  WEED ALLAN ,  GUELER RICHARD

    Inventor： MITCHELL ROBERT ,  WEED ALLAN ,  GUELER RICHARD

    IPC: B65G49/07 ,  H01L21/00 ,  H01L21/677

    CPC classification number: H01L21/67763 ,  H01L21/67213 ,  H01L21/67745 ,  Y10S414/139 ,  Y10S414/141

    Abstract: A transfer system for use with a tool for treating a work-piece at sub-atmospheric pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for treatment of work-pieces placed at a work-piece treatment station within the low pressure region. Multiple work-piece isolation load locks transfer work-pieces, one or two at a time, from a higher pressure region to the lower pressure for treatment and back to said higher pressure subsequent to said treatment. A first robot transfers work-pieces within the low pressure region from the load locks to a treatment station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the multiple work-piece isolation load locks from a source of said work-pieces prior to treatment and to a destination of said work-pieces after said treatment.

    Abstract translation: 一种用于处理亚大气压下的工件的工具的转移系统，例如用于注入硅晶片的离子注入机。 外壳限定用于处理放置在低压区域内的工件处理站的工件的低压区域。 多个工件隔离负载锁将工件一次一个或两个从较高压力区域传递到较低压力以进行处理，并在所述处理之后返回到所述较高压力。 第一机器人将低压区域内的工件从负载锁传送到低压区域内的处理站。 定位在低压区域之外的多个其他机器人在处理之前将工件从多个工件隔离负载锁转移到所述工件的源并在所述处理之后传送到所述工件的目的地。

    基板処理装置及び基板処理方法
    9.
    发明申请
    基板処理装置及び基板処理方法 审中-公开
    基板处理装置和基板处理方法

    公开(公告)号：WO2003001579A1

    公开(公告)日：2003-01-03

    申请号：PCT/JP2002/006297

    申请日：2002-06-24

    Applicant: 東京エレクトロン株式会社 ,  石田 大

    Inventor： 石田 大

    IPC: H01L21/31

    CPC classification number: H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67213 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

    Abstract: A structure, in which a second treating unit group that performs, under vacuum or pressure, e.g., an electron beam or ultraviolet ray irradiation, a CVD or a cleaning treatment is provided integrally with a first treating unit group that forms an interlayer insulation film under a normal pressure, can shorten a treating time especially in a damascene process to decrease foot print per treating power. A treating time thus shortened can prevent an insulating film from absorbing moisture in the air that causes deterioration in film quality, and contribute to forming a quality insulation film even if a porous film, for example, is used as an insulation film.

    Abstract translation: 在真空或压力下进行例如电子束或紫外线照射，CVD或清洁处理的第二处理单元组的结构与形成层间绝缘膜的第一处理单元组一体地提供 正常压力可以缩短治疗时间，特别是在大马士革过程中减少治疗能力的脚印。 这样缩短的处理时间可以防止绝缘膜吸收导致膜质量劣化的空气中的水分，并且即使使用例如多孔膜作为绝缘膜，也有助于形成质量绝缘膜。

    半導体装置の製造装置及び製造システム
    10.
    发明申请
    半導体装置の製造装置及び製造システム 审中-公开
    用于半导体器件的处理装置和处理系统

    公开(公告)号：WO2002080238A1

    公开(公告)日：2002-10-10

    申请号：PCT/JP2002/002892

    申请日：2002-03-26

    Applicant: 株式会社 東芝 ,  宮崎 邦浩

    Inventor： 宮崎 邦浩

    IPC: H01L21/02

    CPC classification number: H01L21/67213 ,  H01L21/67167 ,  H01L21/67219 ,  H01L21/67225 ,  H01L21/67276 ,  H01L21/67727 ,  H01L21/6773 ,  H01L21/67745 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/14

    Abstract: A processing apparatus (13) for a semiconductor device comprises a casting section (13-1), a treatment section, and a delivery section (13-2). The casting section (13-1) receives the casting of a transport box which holds a semiconductor substrate. The treatment section takes in a semiconductor substrate cast into the casting section (13-1) and treats the semiconductor substrate. The delivery section (13-2) is disposed unlevel with the casting section (13-1) and delivers a transport box which holds a semiconductor substrate exhausted from the semiconductor substrate treatment section.

    Abstract translation: 一种用于半导体器件的处理设备（13）包括铸造部分（13-1），处理部分和输送部分（13-2）。 铸造部分（13-1）接收保持半导体衬底的运输箱的铸件。 处理部分接收铸造到铸造部分（13-1）中的半导体衬底并处理半导体衬底。 输送部分（13-2）与铸造部分（13-1）布置，并且输送保持从半导体基板处理部分排出的半导体基板的输送箱。

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