LIGHT EMITTING DIODE MATRIX
    41.
    发明申请
    LIGHT EMITTING DIODE MATRIX 审中-公开
    发光二极管矩阵

    公开(公告)号:WO2008052459A1

    公开(公告)日:2008-05-08

    申请号:PCT/CN2007/070799

    申请日:2007-09-27

    IPC分类号: H01L33/00 H01L27/15

    摘要: A light source includes a light emitting diode (LED) module (100) having a continuous substrate (104), a layer of n-type semiconductor material formed above the substrate, and a layer of p-type semiconductor material formed above the n-type semiconductor materials. The p-type and n-type semiconductor materials are selected to emit light at the p-n junction when an electric current flows through the p-n junction. The LED module (100) includes a plurality of electric contacts (112) connected to the p-type semiconductor material, and at least one electric contact (118) connected to the n-type semiconductor material. The electric contacts are configured to pass electric current through a plurality of regions in the p-n junction such that the plurality of regions have higher electric current densities and emit light brighter than areas outside of the plurality of regions.

    摘要翻译: 光源包括具有连续衬底(104)的发光二极管(LED)模块(100),形成在衬底上方的n型半导体材料层以及形成在正极上的p型半导体材料层, 型半导体材料。 当电流流过p-n结时,选择p型和n型半导体材料在p-n结处发光。 LED模块(100)包括连接到p型半导体材料的多个电触点(112)和连接到n型半导体材料的至少一个电触头(118)。 电触点被配置为使电流通过p-n结中的多个区域,使得多个区域具有较高的电流密度并且发射比多个区域外的区域更亮的光。