利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.019 秒)

    METHOD FOR PRODUCING AN ELECTRONIC COMPONENT, ESPECIALLY A MEMORY CHIP
    3.
    发明申请
    METHOD FOR PRODUCING AN ELECTRONIC COMPONENT, ESPECIALLY A MEMORY CHIP 审中-公开
    方法生产电子部件，尤其是内存芯片

    公开(公告)号：WO03001588A3

    公开(公告)日：2003-03-06

    申请号：PCT/EP0205254

    申请日：2002-05-13

    申请人： INFINEON TECHNOLOGIES AG ,  HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

    发明人： HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

    IPC分类号： H01L21/66 ,  H01L23/525 ,  H01L21/768 ,  H01L21/60 ,  H01L23/485

    CPC分类号： H01L22/22 ,  H01L23/525 ,  H01L23/5258 ,  H01L2924/0002 ,  Y10S438/94 ,  H01L2924/00

    摘要： The invention relates to a method for producing an electronic component, especially a memory chip, using a laser-induced correction to equalise an integrated circuit by means of at least one laser via (15) in a layer at least partially covering the circuit. Said component comprises a rewiring of the contact pads. The inventive method comprises the following steps: each laser via is closed by means of a separate covering layer (16) which is to be applied locally; a rewiring extending between the local covering layers (16) is created; the local covering layers (16) are removed; and the laser-induced correction is carried out by means of the open laser vias.

    摘要翻译： 一种用于制造电子元件，特别是一个存储器芯片，经由一个或多个到电路至少部分地覆盖用于校准集成电路激光通孔（15）用激光索引修正引入层，其特征在于，所述部件具有接触垫的再布线的方法，包括 以下步骤：封闭每个激光通孔的单独局部施加外层（16）的装置; 产生所述覆盖层（16）延伸的重新布线之间的局部; 本地覆盖层的去除（16）; 进行打开激光通孔的激光诱导的校正。

    RADIATION DETECTOR AND IMAGING SYSTEM
    4.
    发明申请
    RADIATION DETECTOR AND IMAGING SYSTEM 审中-公开
    辐射探测器和图像调速系统

    公开(公告)号：WO2012168057A3

    公开(公告)日：2013-02-21

    申请号：PCT/EP2012059388

    申请日：2012-05-21

    申请人： SIEMENS AG ,  HEDLER HARRY ,  HUGHES TIMOTHY ,  SPAHN MARTIN ,  WIRTH STEFAN

    发明人： HEDLER HARRY ,  HUGHES TIMOTHY ,  SPAHN MARTIN ,  WIRTH STEFAN

    IPC分类号： G01T1/20 ,  G01T1/28

    CPC分类号： G01T1/2006 ,  G01T1/20 ,  G01T1/28

    摘要： The invention relates to a radiation detector (100; 101; 102; 103; 104; 105; 106), having a scintillator (120) for generating electromagnetic radiation (202) in response to the action of incident radiation (200). The scintillator (120) has two opposing end faces (121; 122) and a lateral wall (123) between the end faces (121; 122). The radiation detector has, in addition, a photocathode section (130) that is located on the lateral wall (123) of the scintillator (120) and that generates electrons (204) in response to the action of electromagnetic radiation (202) that is generated by the scintillator (120), a microchannel plate (161; 162) comprising a plurality of channels (165), for multiplying the electrons (204) that have been generated by the photocathode section (130) and a detection system (171; 172) for detecting the electrons (204) that have been multiplied by means of the microchannel plate (161; 162). The invention also relates to an imaging system (110) comprising a radiation detector of this type (100; 101; 102; 103; 104; 105; 106).

    摘要翻译： 本发明涉及一种辐射检测器（100; 101; 102; 103; 104; 105; 106）包括用于产生入射辐射（200）的影响下的电磁辐射（202）的闪烁器（120）。 闪烁器（120）包括两个相对的端面（121; 122）和面（121; 122）之间的侧壁（123）。 放射线检测器还具有用于的作用下产生的产生电子（204）由上述闪烁器的在闪烁器（120）的侧壁（123），布置光电阴极部（130）（120）的电磁辐射（202），微通道板（161; ）具有用于乘以多个（信道165）（从光电阴极部130生成162）的电子（204），和检测装置（171;用于检测（与微通道板161 172）; 162）乘以电子。 本发明还涉及一种成像系统（110）包括这样的辐射检测器（100; 101; 102; 103; 104; 105; 106）。

    SILICON PHOTOMULTIPLIER AND RADIATION DETECTOR
    5.
    发明申请
    SILICON PHOTOMULTIPLIER AND RADIATION DETECTOR 审中-公开
    硅光电探测器和辐射探测器

    公开(公告)号：WO2012034824A3

    公开(公告)日：2012-05-31

    申请号：PCT/EP2011064364

    申请日：2011-08-22

    申请人： SIEMENS AG ,  HEDLER HARRY ,  HENSELER DEBORA

    发明人： HEDLER HARRY ,  HENSELER DEBORA

    IPC分类号： G01T1/20

    CPC分类号： H01L31/0232 ,  G01T1/2018 ,  G01T1/208 ,  G01T1/248 ,  H01L27/14609 ,  H01L27/14678 ,  H01L31/02325

    摘要： The invention relates to a silicon photomultiplier (20; 20'; 20''; 62) with a silicon chip (22) comprising an array of microcells (21), wherein the microcells (21) form photon-sensitive active areas (23), each surrounded by photon-insensitive inactive areas (24). At least one elevated, three-dimensional light concentrating structure (27; 27'; 27''; 63) is located directly on top of the Silicon chip (22) within an inactive area (24) and configured such that photons that would have hit an inactive area (24) are redirected towards an active area (23). The light concentrating structure does lead to increased detection efficiency. The inventive SiPM is usable in areas like medical imaging (e.g. PET, SPECT, CT and other X-ray detectors) as well as astrophysics, high-energy physics and other analytics applications.

    摘要翻译： 本发明涉及具有硅芯片（22）的硅光电倍增管（20; 20'; 20“; 62），所述硅芯片包括微电池阵列（21），其中所述微电池（21）形成光子敏感活性区域（23） ，每个被光子不敏感的无效区域包围（24）。 至少一个升高的三维聚光结构（27; 27'; 27“; 63）直接位于无源区域（24）内的硅芯片（22）的顶部上，并且被配置为使得具有 击中非活动区域（24）被重定向到活动区域（23）。 光集中结构确实导致检测效率提高。 本发明的SiPM可用于诸如医学成像（例如PET，SPECT，CT和其它X射线检测器）以及天体物理学，高能物理学和其它分析应用的领域。

    RADIATION DETECTOR AND IMAGING SYSTEM
    6.
    发明申请
    RADIATION DETECTOR AND IMAGING SYSTEM 审中-公开
    辐射探测器和图像调速系统

    公开(公告)号：WO2012168218A3

    公开(公告)日：2013-02-14

    申请号：PCT/EP2012060564

    申请日：2012-06-05

    申请人： SIEMENS AG ,  HEDLER HARRY ,  HUGHES TIMOTHY ,  SPAHN MARTIN ,  WIRTH STEFAN

    发明人： HEDLER HARRY ,  HUGHES TIMOTHY ,  SPAHN MARTIN ,  WIRTH STEFAN

    IPC分类号： G01T1/20 ,  G01T1/28

    CPC分类号： G01T1/20 ,  G01T1/28

    摘要： The invention relates to a radiation detector (100; 101) which comprises a scintillator (120) for producing electromagnetic radiation (202) under the effect of incident radiation (200), a photocathode (130; 131; 132) for producing electrons (204) under the effect of the electromagnetic radiation (202) produced by the scintillator (120), a microchannel plate (140; 141; 142; 143; 144) having a plurality of channels (145; 155; 158) for multiplying the electrons (204) produced by the photocathode (130; 131; 132), and a detection device (160) for detecting the electrons (204) multiplied by the microchannel plate (140; 141; 142; 143; 144). The invention further relates to an imaging system (110) which comprises said radiation detector (100; 101).

    摘要翻译： 本发明涉及一种辐射检测器（100; 101），包括用于入射辐射（200），一个光电阴极的影响下产生的电磁辐射（202）的闪烁器（120）（130; 131; 132）用于产生电子（204） 具有多个通道，用于乘以（从光电阴极130通过的闪烁器（120）（202），一个微通道板的作用而产生的电磁辐射（144 140; 141; 142; 143）（145; 158; 155）; 131; 132）中产生的电子（204）和用于检测（与微通道板140检测装置（160）; 141; 142; 143; 144）乘以电子（204）。 本发明还涉及一种成像系统（110）包括这样的辐射检测器（100; 101）。

    ARRANGEMENT OF TWO OR MORE SEMICONDUCTOR COMPONENTS
    7.
    发明申请
    ARRANGEMENT OF TWO OR MORE SEMICONDUCTOR COMPONENTS 审中-公开
    装置的两个或多个半导体元件

    公开(公告)号：WO2012168059A3

    公开(公告)日：2013-03-21

    申请号：PCT/EP2012059390

    申请日：2012-05-21

    申请人： SIEMENS AG ,  HEDLER HARRY ,  SCHIENLE MEINRAD

    发明人： HEDLER HARRY ,  SCHIENLE MEINRAD

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14636 ,  H01L25/072 ,  H01L25/50 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/1463 ,  H01L31/107 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method for producing an arrangement of two or more semiconductor components, each comprising first (25) and second contact faces (55) that face away from one another, a semiconductor substrate comprising a first planar face (20) is used. The semiconductor components are formed on the semiconductor substrate (15) in such a way that the first contact faces lie on the first planar face of the semiconductor substrate and the second contact faces lie on the semiconductor substrate at a distance from the first planar face.

    摘要翻译： 在用于制造两个或多个半导体器件的阵列的方法中的每个具有相对的第一（25）和第二接触面（55），具有第一平侧面的半导体基片（20）被使用。 被形成在半导体基板（15）上的半导体器件，所述第一接触侧远程在半导体基板和所述第二接触侧的第一平坦侧形成在半导体衬底的所述第一平侧面。

    THREE-DIMENSIONAL MICRO-STRUCTURE, ARRANGEMENT WITH AT LEAST TWO THREE-DIMENSIONAL MICRO-STRUCTURES, METHOD FOR PRODUCING THE MICRO-STRUCTURE AND USE OF THE MICRO-STRUCTURE
    10.
    发明申请
    THREE-DIMENSIONAL MICRO-STRUCTURE, ARRANGEMENT WITH AT LEAST TWO THREE-DIMENSIONAL MICRO-STRUCTURES, METHOD FOR PRODUCING THE MICRO-STRUCTURE AND USE OF THE MICRO-STRUCTURE 审中-公开
    至少有两个二维微结构，其制造方法微结构和使用微观结构的三维微结构安排

    公开(公告)号：WO2011039070A3

    公开(公告)日：2011-05-26

    申请号：PCT/EP2010063811

    申请日：2010-09-20

    申请人： SIEMENS AG ,  HEDLER HARRY ,  ZAPF JOERG

    发明人： HEDLER HARRY ,  ZAPF JOERG

    IPC分类号： B81C99/00

    CPC分类号： B81C99/0085 ,  B81B2203/0361 ,  B81B2207/056 ,  Y10T29/49826 ,  Y10T428/24355

    摘要： The invention relates to a three-dimensional micro-structure comprising a plurality of adjacent micro-columns which are arranged at a distance from each other and essentially parallel in relation to the respective longitudinal extension, said micro-columns being made of at least one micro-column material having respectively an aspect ratio in the region of 20 - 1000 and respectively a micro-column diameter in the region of 0,1 µm - 200 µm, and a micro-column intermediate chamber arranged between adjacent micro-columns having a micro-column distance selected from between the adjacent micro-columns in the region of 1 µm - 100 µm. The invention also relates to a method for producing the three-dimensional micro-structures according to the following steps: a) a template is provided with template material, said template having a three-dimensional structure with column-like template cavities essentially inverse for the micro-structure, b) the micro-column material is arranged in the column-like cavities such that the micro-columns are formed, and c) the template material is at least partially removed. A silicon wafer is preferably used as the template. In order to provide the template, the PAECE (Photo Assisted Electro-Chemical Etching) method is used. Said invention enables micro-structures with extremely large surfaces to be produced.

    摘要翻译： 本发明涉及一种包括多个并排的三维微结构，相对于它们各自的微柱纵向延伸实质上平行于彼此且相互间隔开的微柱与至少一个微柱的材料，各自具有的纵横比 具有20至1000，并且每个具有从0.1微米至200微米范围内的微柱的直径，并且被设置为一个的相邻微柱之间的相邻微柱的微柱间距之间 范围为1微米至100微米选用微型柱间距。 这里还提供了一种制造配备有以下工艺步骤的三维微结构的方法，包括：a）提供具有模板材料，其中基本上在微观结构的掩模具有与柱状模板空腔逆三维模板结构的模板， b）在柱状腔的微柱的材料的放置，从而使微柱形成，以及c）至少部分地去除所述模板材料。 作为模板，硅晶片，优选使用。 为了提供对paece模板（照片辅助电化学刻蚀）方法排序。 通过本发明，具有非常大的表面微结构被实现。