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公开(公告)号:WO2017047289A1
公开(公告)日:2017-03-23
申请号:PCT/JP2016/073406
申请日:2016-08-09
Applicant: 富士電機株式会社
CPC classification number: H01L24/29 , B23K35/0244 , B23K35/025 , B23K35/26 , B23K35/262 , C22C13/02 , H01L23/053 , H01L2224/29201 , H01L2224/29211 , H01L2224/2922 , H01L2224/29238 , H01L2224/29239 , H01L2224/29247 , H01L2224/29255 , H01L2224/29272 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/014 , H01L2924/10272 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/3656 , H01L2924/00014 , H01L2924/00012
Abstract: 耐熱温度が高く、熱伝導特性が高温領域で変化しない鉛フリーはんだを提供する。Sbを、5.0質量%を超えて10.0質量%以下と、Agを2.0~4.0質量%含有し、残部は、Sn及び不可避不純物からなるはんだ材、並びに半導体素子と、基板電極もしくはリードフレームとの間に、かかるはんだ材を含んでなる接合層を備える半導体装置。
Abstract translation: 提供一种在高温范围内保持不受影响的耐热温度和导热性高的无铅焊料。 本发明涉及:含有5.0质量%以上且10.0质量%以下的Sb和2.0〜4.0质量%Ag的焊料,其余部分为Sn和不可避免的杂质; 以及在半导体元件和基板电极或引线框架之间设置有包含焊料的接合层的半导体器件。
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公开(公告)号:WO2003021664A1
公开(公告)日:2003-03-13
申请号:PCT/JP2002/008631
申请日:2002-08-27
Applicant: 株式会社日立製作所 , 日立東部セミコンダクタ株式会社 , 栗原 保敏 , 高橋 可昌 , 遠藤 恒雄 , 根岸 幹夫 , 山浦 正志 , 中嶋 浩一 , 櫻井 洋介 , 児玉 弘則
IPC: H01L21/60
CPC classification number: H01L24/85 , B23K35/0244 , B23K35/262 , C04B37/026 , C04B2237/12 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/368 , C04B2237/401 , C04B2237/407 , C04B2237/708 , C04B2237/72 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/3677 , H01L23/49575 , H01L23/49805 , H01L23/552 , H01L23/642 , H01L24/01 , H01L24/13 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/133 , H01L2224/13339 , H01L2224/16145 , H01L2224/16225 , H01L2224/16237 , H01L2224/29209 , H01L2224/29211 , H01L2224/29213 , H01L2224/29218 , H01L2224/29223 , H01L2224/29239 , H01L2224/29244 , H01L2224/29247 , H01L2224/29249 , H01L2224/29255 , H01L2224/29264 , H01L2224/29266 , H01L2224/2927 , H01L2224/29272 , H01L2224/293 , H01L2224/29339 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4912 , H01L2224/49175 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2224/85203 , H01L2224/92 , H01L2224/97 , H01L2924/00014 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15311 , H01L2924/15787 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/35121 , H05K3/284 , H05K3/3442 , H05K3/3484 , H05K2201/0215 , H05K2201/10636 , Y02P70/611 , Y02P70/613 , H01L2924/01014 , H01L2924/01028 , H01L2224/83 , H01L2224/92247 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2924/01029
Abstract: A semiconductor device, wherein a solder layer for fixing chip components and a wiring member together is enclosed by a resin layer, and the solder layer is composed of a composite material formed by dispersing metal powder into a matrix metal. When a semiconductor device, comprising chip components mounted to a wiring member by a solder material, and a resin−sealed soldered portion, is secondarily mounted to an external wiring member, the flowing−out of the solder material and hence short−circuiting, wire breaking and chip component dislocation can be prevented.
Abstract translation: 一种半导体器件,其中用于将芯片部件和布线部件固定在一起的焊料层被树脂层包围,并且焊料层由通过将金属粉末分散在基体金属中形成的复合材料构成。 当包括通过焊料材料安装到布线构件的芯片组件和树脂密封焊接部分的半导体器件被二次安装到外部布线构件时,焊料材料的流出以及因此短路的导线 可以防止断裂和芯片部件错位。
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