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公开(公告)号:CN105051890B
公开(公告)日:2018-11-02
申请号:CN201480013601.4
申请日:2014-03-12
Applicant: 日东电工株式会社
IPC: H01L23/12 , H01L21/301 , H01L21/56 , H01L21/60
CPC classification number: H01L21/6836 , B32B5/02 , B32B5/26 , B32B7/12 , B32B15/08 , B32B25/06 , B32B25/08 , B32B25/10 , B32B25/12 , B32B25/14 , B32B27/08 , B32B27/10 , B32B27/12 , B32B27/20 , B32B27/22 , B32B27/281 , B32B27/283 , B32B27/285 , B32B27/288 , B32B27/304 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/38 , B32B27/40 , B32B27/42 , B32B29/005 , B32B2255/02 , B32B2255/10 , B32B2255/12 , B32B2255/20 , B32B2255/205 , B32B2262/0269 , B32B2262/101 , B32B2307/50 , B32B2307/514 , B32B2307/558 , B32B2457/00 , B32B2457/14 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/97 , H01L2221/68318 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2224/13101 , H01L2224/16225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/81191 , H01L2924/15787 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012
Abstract: 本发明提供能够制作耐冲击性优良的二次安装半导体装置、并且能够实现二次安装工序的效率化的增强片及使用该增强片的二次安装半导体装置的制造方法。本发明为一种增强片,用于对在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置进行增强,该增强片依次具备基材层、粘合剂层和热固性树脂层,所述粘合剂层的断裂强度为0.07MPa以上,且60~100℃下的熔融粘度为4000Pa·s以下。
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公开(公告)号:CN105431937A
公开(公告)日:2016-03-23
申请号:CN201480043139.2
申请日:2014-06-30
Applicant: 日东电工株式会社
CPC classification number: H01L23/544 , H01L21/561 , H01L23/295 , H01L23/3128 , H01L24/02 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/02311 , H01L2224/02313 , H01L2224/0401 , H01L2224/16146 , H01L2224/17181 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/92 , H01L2224/9202 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2225/06582 , H01L2225/06593 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00 , H01L2224/0231 , H01L2224/11 , H01L2224/83 , H01L21/56 , H01L2223/544 , H01L21/304 , H01L21/78 , H01L2924/00014
Abstract: 本发明提供一种密封用片,是电子器件的密封中使用的热固性的密封用片,一个面的表面粗糙度(Ra)在固化前为3μm以下。
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公开(公告)号:CN105143344A
公开(公告)日:2015-12-09
申请号:CN201480021494.X
申请日:2014-04-11
Applicant: 日东电工株式会社
CPC classification number: C08L61/06 , C08G59/62 , C08L63/00 , C08L2203/206 , H01L21/56 , H01L21/561 , H01L21/6836 , H01L23/293 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2224/13025 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/27003 , H01L2224/271 , H01L2224/2744 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/73104 , H01L2224/73204 , H01L2224/81121 , H01L2224/81193 , H01L2224/81204 , H01L2224/81815 , H01L2224/83123 , H01L2224/83191 , H01L2224/83204 , H01L2224/83862 , H01L2224/8388 , H01L2224/92 , H01L2224/9211 , H01L2224/94 , H01L2924/066 , H01L2924/0665 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H01L2924/3512 , H01L2924/01006 , H01L2924/00014 , H01L2924/014 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/0103 , H01L2924/01083 , H01L2224/27 , H01L2224/81 , H01L2224/83 , H01L21/304 , H01L21/78 , H01L2924/05442 , H01L2924/00 , C08L61/24
Abstract: 提供一种热固性树脂组合物和使用该热固性树脂组合物的半导体装置的制造方法,该热固性树脂组合物通过缓和半导体元件与被粘物的热响应行为的差异,能够确保构件材质的可利用性,并且能够制造连接可靠性高的半导体装置。本发明为包含环氧树脂和羟基当量为200g/eq以上的线型酚醛型酚醛树脂的半导体装置制造用的热固性树脂组合物。上述线型酚醛型酚醛树脂优选包含由下述结构式表示的结构(式中,n为0~12的整数)。
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公开(公告)号:CN105122444A
公开(公告)日:2015-12-02
申请号:CN201480020025.6
申请日:2014-03-27
Applicant: 日东电工株式会社
CPC classification number: H01L23/3157 , C09J7/38 , C09J2201/606 , H01L21/563 , H01L21/6836 , H01L23/295 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/81 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2224/11002 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16238 , H01L2224/16268 , H01L2224/27003 , H01L2224/27436 , H01L2224/2929 , H01L2224/29298 , H01L2224/29386 , H01L2224/32225 , H01L2224/32245 , H01L2224/73104 , H01L2224/73204 , H01L2224/75753 , H01L2224/8113 , H01L2224/81193 , H01L2224/81203 , H01L2224/83191 , H01L2224/83862 , H01L2224/9211 , H01L2224/94 , H01L2224/11 , H01L2224/27 , H01L2924/0103 , H01L2924/01083 , H01L2924/01047 , H01L2924/01029 , H01L2924/01082 , H01L2924/05432 , H01L2924/207 , H01L2224/81 , H01L2224/83
Abstract: 本发明提供在导热性优异的同时、可以良好地填充半导体元件与基板之间的空间的底部填充膜和密封片。本发明涉及一种底部填充膜,其含有树脂和导热性填料,上述导热性填料的含量为50体积%以上,相对于底部填充膜的厚度,上述导热性填料的平均粒径为30%以下的值,相对于上述底部填充膜的厚度,上述导热性填料的最大粒径为80%以下的值。
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公开(公告)号:CN105074904A
公开(公告)日:2015-11-18
申请号:CN201480018225.8
申请日:2014-03-19
Applicant: 日东电工株式会社
IPC: H01L23/29 , B32B27/00 , C09J7/02 , C09J201/00 , C09K3/10 , H01L21/301 , H01L21/304 , H01L21/60 , H01L23/31
CPC classification number: H01L23/29 , B32B7/12 , B32B2307/51 , B32B2457/14 , C09K3/1006 , H01L21/561 , H01L21/563 , H01L21/6836 , H01L23/293 , H01L23/544 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2223/54426 , H01L2224/13025 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/27003 , H01L2224/271 , H01L2224/2744 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/32225 , H01L2224/32245 , H01L2224/73104 , H01L2224/73204 , H01L2224/75753 , H01L2224/81123 , H01L2224/81191 , H01L2224/81193 , H01L2224/81204 , H01L2224/81815 , H01L2224/83123 , H01L2224/83191 , H01L2224/83204 , H01L2224/83862 , H01L2224/8388 , H01L2224/92 , H01L2224/9211 , H01L2224/94 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H01L2924/3512 , H01L2924/01006 , H01L2924/00014 , H01L2924/014 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/0103 , H01L2924/01083 , H01L2224/27 , H01L2224/81 , H01L2224/83 , H01L21/304 , H01L21/78 , H01L2924/05442 , H01L2924/00
Abstract: 本发明提供可缓和半导体元件与被粘物的热响应行为之差且用于安装半导体元件的对位简单的底部填充材料及具备其的密封片材、以及使用该底部填充材料的半导体装置的制造方法。关于本发明的底部填充材料,热固化处理前的雾度为70%以下,且在175℃下经1小时热固化处理后的储能弹性模量E'[MPa]及热膨胀系数α[ppm/K]在25℃下满足下述式(1)。10000<E'×α<250000[Pa/K]…(1)。
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公开(公告)号:CN105051890A
公开(公告)日:2015-11-11
申请号:CN201480013601.4
申请日:2014-03-12
Applicant: 日东电工株式会社
IPC: H01L23/12 , H01L21/301 , H01L21/56 , H01L21/60
CPC classification number: H01L21/6836 , B32B5/02 , B32B5/26 , B32B7/12 , B32B15/08 , B32B25/06 , B32B25/08 , B32B25/10 , B32B25/12 , B32B25/14 , B32B27/08 , B32B27/10 , B32B27/12 , B32B27/20 , B32B27/22 , B32B27/281 , B32B27/283 , B32B27/285 , B32B27/288 , B32B27/304 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/38 , B32B27/40 , B32B27/42 , B32B29/005 , B32B2255/02 , B32B2255/10 , B32B2255/12 , B32B2255/20 , B32B2255/205 , B32B2262/0269 , B32B2262/101 , B32B2307/50 , B32B2307/514 , B32B2307/558 , B32B2457/00 , B32B2457/14 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/97 , H01L2221/68318 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68377 , H01L2221/68381 , H01L2221/68386 , H01L2224/13101 , H01L2224/16225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/81191 , H01L2924/15787 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012
Abstract: 本发明提供能够制作耐冲击性优良的二次安装半导体装置、并且能够实现二次安装工序的效率化的增强片及使用该增强片的二次安装半导体装置的制造方法。本发明为一种增强片,用于对在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置进行增强,该增强片依次具备基材层、粘合剂层和热固性树脂层,所述粘合剂层的断裂强度为0.07MPa以上,且60~100℃下的熔融粘度为4000Pa·s以下。
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