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公开(公告)号:CN104779233B
公开(公告)日:2018-11-30
申请号:CN201410627580.7
申请日:2014-11-07
申请人: 财团法人工业技术研究院
IPC分类号: H01L23/488 , H01L23/522 , H01L21/60
CPC分类号: H01L21/76898 , H01L21/4882 , H01L21/50 , H01L21/563 , H01L23/3675 , H01L23/42 , H01L23/4275 , H01L23/433 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/18 , H01L2224/16235 , H01L2224/2929 , H01L2224/29387 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/81005 , H01L2224/81192 , H01L2224/83005 , H01L2224/83191 , H01L2224/92125 , H01L2224/92225 , H01L2224/97 , H01L2924/12042 , H01L2924/15311 , H01L2924/157 , H01L2924/16153 , H01L2924/16251 , H01L2924/1659 , H01L2924/167 , H01L2924/16724 , H01L2924/16747 , H01L2224/81 , H01L2224/83 , H01L2924/00
摘要: 本发明公开一种薄化集成电路装置与其制作流程。依据所公开的制作流程,在基板形成硅穿孔,硅穿孔的第一端曝露于基板的第一表面。并于基板的第一表面配置凸块,使凸块与硅穿孔电连接。并于凸块上配置集成电路芯片,集成电路芯片具有第一侧与第二侧,集成电路芯片的第一侧连接于凸块。并将热介质层配置于集成电路芯片的第二侧。通过热介质层将导热盖的下表面附着于集成电路芯片。并且,以导热盖作为载体,通过固定导热盖来固定集成电路芯片与基板,以研磨基板相对于第一表面的第二表面,使硅穿孔的第二端暴露于第二表面。
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公开(公告)号:CN106062118B
公开(公告)日:2018-11-23
申请号:CN201580013038.5
申请日:2015-02-03
申请人: 迪睿合株式会社
发明人: 稻濑圭亮
IPC分类号: C09J201/00 , C09J4/00 , C09J5/00 , C09J7/10 , C09J9/02 , C09J11/06 , C09J163/00 , H01B1/20
CPC分类号: C09J11/06 , C08K5/005 , C09J5/00 , C09J9/02 , C09J163/00 , C09J201/00 , C09J2203/326 , C09J2205/31 , G02F1/13452 , G02F2202/28 , H01B1/22 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/81 , H01L24/83 , H01L2223/54426 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/13644 , H01L2224/16227 , H01L2224/27003 , H01L2224/2732 , H01L2224/27334 , H01L2224/29082 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/29311 , H01L2224/29316 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29371 , H01L2224/29386 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/294 , H01L2224/29499 , H01L2224/32225 , H01L2224/73204 , H01L2224/75251 , H01L2224/75301 , H01L2224/8113 , H01L2224/81132 , H01L2224/81903 , H01L2224/8313 , H01L2224/83132 , H01L2224/83192 , H01L2224/83488 , H01L2224/8385 , H01L2224/83851 , H01L2224/83874 , H01L2924/3511 , H01L2924/381 , H01L2924/00014 , H01L2924/0549 , H01L2924/0543 , H01L2924/01049 , H01L2924/0544 , H01L2924/0105 , H01L2924/07811 , H01L2924/0665 , H01L2924/066 , H01L2924/069 , H01L2924/01006 , H01L2924/0635 , H01L2924/0615 , H01L2924/07001 , H01L2924/06 , H01L2924/00012 , H01L2924/07802
摘要: 通过使用光固化型粘接剂,可在低温下进行电子部件的连接,同时改善电子部件的连接不良。具有在剥离基体材料上支撑的粘合剂树脂层,粘合剂树脂层含有光聚合性化合物、光聚合引发剂、光吸收剂和导电性粒子,光吸收剂的光吸收峰值波长比光聚合引发剂的光吸收峰值波长长,且相隔20nm以上。
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公开(公告)号:CN107771354A
公开(公告)日:2018-03-06
申请号:CN201680018886.X
申请日:2016-03-31
申请人: 爱法组装材料公司
IPC分类号: H01L23/488 , H01L23/29 , H01L21/60 , H01L21/48 , B23K1/00 , B23K1/20 , B23K35/02 , B23K35/36 , C08K3/00 , C08K3/04 , C08K5/00 , C08K5/092 , C08K5/18 , C08K5/49 , C08K7/02 , C08L63/00 , C08L83/04
CPC分类号: C08K3/04 , B23K1/0016 , B23K1/20 , B23K35/00 , B23K35/0244 , B23K35/025 , B23K35/3602 , B23K2101/42 , C08K3/013 , C08K3/042 , C08K5/00 , C08K7/02 , H01L23/295 , H01L23/296 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/1131 , H01L2224/11312 , H01L2224/1132 , H01L2224/1141 , H01L2224/11418 , H01L2224/11422 , H01L2224/1301 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/1329 , H01L2224/133 , H01L2224/13311 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13386 , H01L2224/13387 , H01L2224/13393 , H01L2224/13439 , H01L2224/13444 , H01L2224/13447 , H01L2224/13486 , H01L2224/13487 , H01L2224/1349 , H01L2224/13499 , H01L2224/2731 , H01L2224/27312 , H01L2224/2732 , H01L2224/2741 , H01L2224/27418 , H01L2224/27422 , H01L2224/27436 , H01L2224/27602 , H01L2224/2929 , H01L2224/29294 , H01L2224/293 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29386 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29486 , H01L2224/29487 , H01L2224/2949 , H01L2224/29499 , H01L2224/73204 , H01L2224/8184 , H01L2224/81856 , H01L2224/81862 , H01L2224/81874 , H01L2224/8321 , H01L2224/83851 , H01L2224/83856 , H01L2224/83862 , H01L2224/83874 , H01L2924/12041 , H01L2924/3841 , C08L63/00 , C08L83/04 , C08K5/092 , C08K5/18 , C08K5/49 , C08L2205/025 , H01L2924/014 , H01L2924/00014 , H01L2924/0105 , H01L2924/01047 , H01L2924/01029 , H01L2924/01006 , H01L2924/00012 , H01L2924/05341 , H01L2924/07001 , H01L2924/0715 , H01L2924/0675 , H01L2924/0665 , H01L2924/06 , H01L2924/01079 , H01L2924/053 , H01L2924/01102 , H01L2924/01103 , H01L2924/01109 , H01L2924/01009 , H01L2924/0503 , H01L2924/01005 , H01L2924/066 , H01L2924/0635 , H01L2924/061 , H01L2924/05432 , H01L2924/04642 , H01L2924/05032 , H01L2924/05442 , H01L2924/0542 , H01L2924/0103 , C08K3/00
摘要: 一种用于电子组装方法的组合物,该组合物包含分散在有机介质中的填料,其中:该有机介质包含聚合物;该填料包含石墨烯、官能化石墨烯、氧化石墨烯、多面体低聚倍半硅氧烷、石墨、二维材料、氧化铝、氧化锌、氮化铝、氮化硼、银、纳米纤维、碳纤维、金刚石、碳纳米管、二氧化硅和金属涂布的颗粒中的一种或多种,并且,基于组合物的总重量,该组合物包含0.001~40重量%的填料。
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公开(公告)号:CN107112314A
公开(公告)日:2017-08-29
申请号:CN201680004447.3
申请日:2016-01-13
申请人: 迪睿合株式会社
IPC分类号: H01L25/065 , H01L21/60 , H01L25/07 , H01L25/18 , H05K3/46
CPC分类号: H01L25/0657 , H01L23/544 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2223/54426 , H01L2224/11003 , H01L2224/111 , H01L2224/13078 , H01L2224/131 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/1319 , H01L2224/133 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13644 , H01L2224/13655 , H01L2224/16058 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/17107 , H01L2224/17181 , H01L2224/27003 , H01L2224/271 , H01L2224/27515 , H01L2224/2919 , H01L2224/2929 , H01L2224/29387 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73104 , H01L2224/73204 , H01L2224/81101 , H01L2224/81122 , H01L2224/8113 , H01L2224/81132 , H01L2224/81203 , H01L2224/81903 , H01L2224/83101 , H01L2224/83122 , H01L2224/8313 , H01L2224/83132 , H01L2224/83203 , H01L2224/83856 , H01L2224/9211 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2225/06565 , H01L2225/06586 , H01L2225/06589 , H01L2924/00015 , H01L2924/3841 , H01L2224/83851 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2924/0635 , H01L2924/0665 , H01L2924/05442 , H01L2924/05432
摘要: 提供导通特性优异且能够以低成本制造的、层叠具有贯通电极的半导体基板的多层基板。在多层基板的俯视观察中,导电粒子选择性地存在于贯通电极所对置的位置。多层基板具有对置的贯通电极通过导电粒子连接、形成有该贯通电极的半导体基板彼此通过绝缘粘接剂粘接的连接构造。
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公开(公告)号:CN106536609A
公开(公告)日:2017-03-22
申请号:CN201480080255.1
申请日:2014-07-07
申请人: 霍尼韦尔国际公司
CPC分类号: C09K5/14 , C08K13/02 , C08K2201/001 , C08L23/0815 , C08L2201/08 , C08L2203/20 , C09K5/063 , C09K15/06 , C09K15/22 , C09K15/24 , C09K15/30 , G06F1/20 , H01L23/3675 , H01L23/3737 , H01L23/42 , H01L24/32 , H01L2224/2929 , H01L2224/29309 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/32245 , H01L2924/0002 , H01L2924/0503 , H01L2924/05032 , H01L2924/05042 , H01L2924/0542 , H01L2924/05432 , H01L2924/0544 , H01L2924/12041 , H01L2924/1432 , H05K7/2039 , H01L2924/00
摘要: 热界面材料包含至少一种聚合物、至少一种导热填料、和至少一种离子清除剂。在一些实施方案中,所述离子清除剂为络合剂,其选自含氮络合剂、含磷络合剂、和基于羟基羧酸的络合剂。
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公开(公告)号:CN106457383A
公开(公告)日:2017-02-22
申请号:CN201580026546.7
申请日:2015-04-10
申请人: 阿尔法金属公司
CPC分类号: H01L24/29 , B22F1/0003 , B22F1/0014 , B22F1/0074 , B22F1/025 , B22F7/04 , B22F2007/047 , B22F2301/255 , B22F2302/45 , B23K1/0016 , B23K35/025 , B23K35/3006 , B23K35/3601 , B23K35/3613 , B23K35/3618 , B23K35/365 , B23K2101/40 , B23K2103/56 , H01B1/22 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L51/5246 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05644 , H01L2224/11003 , H01L2224/1132 , H01L2224/11334 , H01L2224/131 , H01L2224/13339 , H01L2224/13347 , H01L2224/13355 , H01L2224/13387 , H01L2224/1339 , H01L2224/13439 , H01L2224/1349 , H01L2224/13499 , H01L2224/16227 , H01L2224/27003 , H01L2224/271 , H01L2224/27332 , H01L2224/27436 , H01L2224/27505 , H01L2224/2929 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29387 , H01L2224/2939 , H01L2224/29439 , H01L2224/2949 , H01L2224/29499 , H01L2224/32145 , H01L2224/32146 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/81075 , H01L2224/81192 , H01L2224/81203 , H01L2224/8121 , H01L2224/8184 , H01L2224/81948 , H01L2224/83075 , H01L2224/83191 , H01L2224/83192 , H01L2224/83203 , H01L2224/8321 , H01L2224/83439 , H01L2224/83447 , H01L2224/8384 , H01L2224/83948 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/0665 , H01L2924/12041 , H01L2924/12044 , H01L2924/1461 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/206 , H01L2924/2064 , H05K3/321 , H01L2924/00012 , H01L2224/83 , H01L2924/0105 , H01L2924/01046 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/0103 , H01L2924/0493 , H01L2924/01004 , H01L2224/27 , H01L2924/01074 , H01L2224/81 , H01L2224/11436 , H01L2224/11 , H01L2224/45099 , H01L2924/00 , B22F1/0062 , B22F1/0007 , B22F9/24
摘要: 一种烧结粉末,其包含:具有从100nm至50μm的平均最长尺寸的第一类型的金属颗粒。
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公开(公告)号:CN103377951B
公开(公告)日:2016-11-23
申请号:CN201310137491.X
申请日:2013-04-19
申请人: 英飞凌科技股份有限公司
IPC分类号: H01L21/58
CPC分类号: H01L25/16 , H01L21/561 , H01L23/295 , H01L23/49805 , H01L23/5389 , H01L23/562 , H01L24/24 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/743 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/50 , H01L2224/24011 , H01L2224/2402 , H01L2224/24137 , H01L2224/245 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/27416 , H01L2224/27422 , H01L2224/27438 , H01L2224/2784 , H01L2224/27848 , H01L2224/29076 , H01L2224/29078 , H01L2224/2919 , H01L2224/2929 , H01L2224/29387 , H01L2224/2939 , H01L2224/30505 , H01L2224/3201 , H01L2224/32225 , H01L2224/32245 , H01L2224/33505 , H01L2224/48091 , H01L2224/48137 , H01L2224/4814 , H01L2224/48151 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82105 , H01L2224/82106 , H01L2224/83192 , H01L2224/83801 , H01L2224/83825 , H01L2224/83856 , H01L2224/83862 , H01L2224/83951 , H01L2224/92244 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2224/82 , H01L2924/00012 , H01L2224/83 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要: 本发明涉及半导体器件的制造方法和半导体器件。在制造半导体器件的方法中,第一半导体元件被安装在载体上。b阶段可固化聚合物被沉积在载体上。第二半导体元件被附着在该聚合物上。
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公开(公告)号:CN104733417A
公开(公告)日:2015-06-24
申请号:CN201410674233.X
申请日:2014-11-21
申请人: 国际商业机器公司
IPC分类号: H01L23/488 , H01L23/367 , H01L23/31 , H01L21/50
CPC分类号: H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/3677 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/06131 , H01L2224/06134 , H01L2224/1145 , H01L2224/11462 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/14131 , H01L2224/14134 , H01L2224/16146 , H01L2224/16147 , H01L2224/16225 , H01L2224/17181 , H01L2224/2929 , H01L2224/29387 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73104 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/83104 , H01L2224/83191 , H01L2224/9211 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06589 , H01L2924/12042 , H01L2924/15311 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/0665 , H01L2924/05442 , H01L2924/00012 , H01L2224/81 , H01L2224/83
摘要: 本公开涉及一种半导体芯片及其制造方法。导热层沉积在半导体芯片的晶片的第一表面上。刻蚀导热层以形成在每个半导体芯片的第一表面上暴露贯通电极的过孔。导电凸块沉积在每个半导体芯片的第二表面上的贯通电极上。堆叠半导体芯片,其中半导体芯片中的第二半导体芯片的导电凸块通过半导体芯片中的第一半导体芯片的过孔电接触第一半导体芯片的贯通电极,以及半导体芯片中的第三半导体芯片的导电凸块通过第二半导体芯片的过孔电接触第二半导体芯片的贯通电极。
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公开(公告)号:CN104704618A
公开(公告)日:2015-06-10
申请号:CN201380052142.6
申请日:2013-10-07
申请人: 三菱综合材料株式会社
CPC分类号: H01L24/32 , C04B37/026 , C04B2237/06 , C04B2237/125 , C04B2237/126 , C04B2237/366 , C04B2237/402 , C04B2237/597 , C04B2237/708 , C04B2237/72 , H01L23/3735 , H01L23/473 , H01L23/49822 , H01L24/29 , H01L24/48 , H01L24/83 , H01L25/07 , H01L25/18 , H01L33/641 , H01L2224/2731 , H01L2224/2732 , H01L2224/27505 , H01L2224/29082 , H01L2224/29083 , H01L2224/29188 , H01L2224/29294 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29387 , H01L2224/29388 , H01L2224/32225 , H01L2224/32227 , H01L2224/32245 , H01L2224/4809 , H01L2224/48227 , H01L2224/48245 , H01L2224/73265 , H01L2224/83192 , H01L2224/83203 , H01L2224/83539 , H01L2224/83595 , H01L2224/83695 , H01L2224/8384 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/0541 , H01L2924/01047 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599 , H01L21/52 , H01L23/36
摘要: 本发明所涉及的半导体装置(1)具备:由导电性材料构成的电路层(12);及搭载于电路层(12)上的半导体元件(3),在电路层(12)的一面形成有气孔率设在5%以上且55%以下的范围内的基底层(31),在该基底层(31)之上形成有由接合材料的烧成体构成的接合层(38),所述接合材料包含金属粒子及金属氧化物粒子中的至少一方或双方及有机物,电路层(12)和半导体元件(3)经由基底层(31)及接合层(38)而接合。
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公开(公告)号:CN104701191A
公开(公告)日:2015-06-10
申请号:CN201410858127.7
申请日:2014-12-05
申请人: 毅宝力科技有限公司
发明人: 张家骅
IPC分类号: H01L21/48 , H01L23/495
CPC分类号: H01L21/4828 , H01L21/4825 , H01L21/4839 , H01L21/4846 , H01L21/4853 , H01L21/4871 , H01L21/563 , H01L21/565 , H01L21/568 , H01L23/13 , H01L23/49503 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L23/5389 , H01L24/19 , H01L24/96 , H01L24/97 , H01L25/105 , H01L2224/12105 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/1329 , H01L2224/13339 , H01L2224/16225 , H01L2224/2929 , H01L2224/29387 , H01L2224/32225 , H01L2224/73204 , H01L2224/81203 , H01L2224/81207 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2225/1023 , H01L2225/1035 , H01L2225/1058 , H01L2924/15151 , H01L2924/15153 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2224/83 , H01L2224/81 , H01L2924/014 , H01L2924/00 , H01L21/4803 , H01L23/495 , H01L23/49568 , H01L2221/10
摘要: 一种制造BGA载体的方法,该方法包括将导电部分和模制的介电部分组合,介电部分具有顶表面、底表面和内表面,内表面与所述预表面和所述底表面相交,内表面形成腔,用于容纳半导体管芯;选择性地将半导体管芯接合至导电部分的顶表面上;选择性地蚀刻导电部分的一部分;并将焊料抗蚀剂施加到导电部分的底表面上。
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