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公开(公告)号：CN105405824A
公开(公告)日：2016-03-16
申请号：CN201510554070.6
申请日：2015-09-02
申请人： 英飞凌科技股份有限公司
发明人： F.克勒纳
IPC分类号： H01L23/488 , H01L23/495 , H01L21/58
CPC分类号： H01L24/29 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/302 , B23K35/32 , B23K35/36 , B23K2101/40 , B23K2103/172 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2224/03462 , H01L2224/04026 , H01L2224/05647 , H01L2224/05747 , H01L2224/05893 , H01L2224/06181 , H01L2224/271 , H01L2224/2711 , H01L2224/2712 , H01L2224/27442 , H01L2224/2746 , H01L2224/276 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29157 , H01L2224/29193 , H01L2224/29247 , H01L2224/29271 , H01L2224/29393 , H01L2224/29447 , H01L2224/29471 , H01L2224/32013 , H01L2224/32014 , H01L2224/32057 , H01L2224/32058 , H01L2224/32245 , H01L2224/831 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83447 , H01L2224/83693 , H01L2224/8382 , H01L2224/83825 , H01L2924/0105 , H01L2924/0132 , H01L2924/014 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/00012
摘要： 本发明涉及预制结构及其形成方法、和焊接半导体芯片布置的方法。用于焊接半导体芯片布置的预制结构包括碳纤维复合片以及在碳纤维复合片之上形成的焊料层。
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公开(公告)号：CN105405824B
公开(公告)日：2018-05-22
申请号：CN201510554070.6
申请日：2015-09-02
申请人： 英飞凌科技股份有限公司
发明人： F.克勒纳
IPC分类号： H01L23/488 , H01L23/495 , H01L21/58
CPC分类号： H01L24/29 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/0244 , B23K35/302 , B23K35/32 , B23K35/36 , B23K2101/40 , B23K2103/172 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2224/03462 , H01L2224/04026 , H01L2224/05647 , H01L2224/05747 , H01L2224/05893 , H01L2224/06181 , H01L2224/271 , H01L2224/2711 , H01L2224/2712 , H01L2224/27442 , H01L2224/2746 , H01L2224/276 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29157 , H01L2224/29193 , H01L2224/29247 , H01L2224/29271 , H01L2224/29393 , H01L2224/29447 , H01L2224/29471 , H01L2224/32013 , H01L2224/32014 , H01L2224/32057 , H01L2224/32058 , H01L2224/32245 , H01L2224/831 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83447 , H01L2224/83693 , H01L2224/8382 , H01L2224/83825 , H01L2924/0105 , H01L2924/0132 , H01L2924/014 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/00012
摘要： 本发明涉及预制结构及其形成方法、和焊接半导体芯片布置的方法。用于焊接半导体芯片布置的预制结构包括碳纤维复合片以及在碳纤维复合片之上形成的焊料层。
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公开(公告)号：CN103201834B
公开(公告)日：2016-03-02
申请号：CN201280003499.0
申请日：2012-10-01
申请人： 松下知识产权经营株式会社
CPC分类号： H01L23/495 , C25D3/12 , C25D5/022 , C25D5/48 , C25D7/00 , C25D7/12 , H01L23/36 , H01L23/49513 , H01L23/49562 , H01L23/49582 , H01L24/00 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L2224/2732 , H01L2224/291 , H01L2224/29111 , H01L2224/29294 , H01L2224/293 , H01L2224/32245 , H01L2224/33181 , H01L2224/35823 , H01L2224/35825 , H01L2224/3583 , H01L2224/35848 , H01L2224/35985 , H01L2224/37124 , H01L2224/37147 , H01L2224/3756 , H01L2224/37565 , H01L2224/37655 , H01L2224/37755 , H01L2224/37893 , H01L2224/37895 , H01L2224/40135 , H01L2224/40475 , H01L2224/40499 , H01L2224/83192 , H01L2224/8321 , H01L2224/8338 , H01L2224/83455 , H01L2224/83555 , H01L2224/83693 , H01L2224/83695 , H01L2224/83801 , H01L2224/83815 , H01L2224/84801 , H01L2224/84815 , H01L2924/00011 , H01L2924/351 , H01L2924/3511 , H01L2924/3512 , H01L2924/014 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2224/83205
摘要： 提供一种能抑制热阻的增加，并能减小施加到焊料层的热阻的半导体装置。其配置结构具有：半导体元件（5）；焊料层（4），该焊料层（4）配置在半导体元件的至少一个面上；以及引线框（2），该引线框（2）以夹着多孔镀镍部（1）的方式配置在该焊料层上。与直接接合半导体元件与引线框的情况相比，能将焊料接合部的热阻的增加量抑制为仅与多孔镀镍部分相对应的量，能降低施加到焊料层的热阻。
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公开(公告)号：CN103201834A
公开(公告)日：2013-07-10
申请号：CN201280003499.0
申请日：2012-10-01
申请人： 松下电器产业株式会社
CPC分类号： H01L23/495 , C25D3/12 , C25D5/022 , C25D5/48 , C25D7/00 , C25D7/12 , H01L23/36 , H01L23/49513 , H01L23/49562 , H01L23/49582 , H01L24/00 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L2224/2732 , H01L2224/291 , H01L2224/29111 , H01L2224/29294 , H01L2224/293 , H01L2224/32245 , H01L2224/33181 , H01L2224/35823 , H01L2224/35825 , H01L2224/3583 , H01L2224/35848 , H01L2224/35985 , H01L2224/37124 , H01L2224/37147 , H01L2224/3756 , H01L2224/37565 , H01L2224/37655 , H01L2224/37755 , H01L2224/37893 , H01L2224/37895 , H01L2224/40135 , H01L2224/40475 , H01L2224/40499 , H01L2224/83192 , H01L2224/8321 , H01L2224/8338 , H01L2224/83455 , H01L2224/83555 , H01L2224/83693 , H01L2224/83695 , H01L2224/83801 , H01L2224/83815 , H01L2224/84801 , H01L2224/84815 , H01L2924/00011 , H01L2924/351 , H01L2924/3511 , H01L2924/3512 , H01L2924/014 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2224/83205
摘要： 提供一种能抑制热阻的增加，并能减小施加到焊料层的热阻的半导体装置。其配置结构具有：半导体元件（5）；焊料层（4），该焊料层（4）配置在半导体元件的至少一个面上；以及引线框（2），该引线框（2）以夹着多孔镀镍部（1）的方式配置在该焊料层上。与直接接合半导体元件与引线框的情况相比，能将焊料接合部的热阻的增加量抑制为仅与多孔镀镍部分相对应的量，能降低施加到焊料层的热阻。
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