公开(公告)号：EP3007242A1

公开(公告)日：2016-04-13

申请号：EP14804218.7

申请日：2014-05-22

申请人： DENSO CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： TESHIGAHARA, Akihiko ,  KANO, Kazuhiko ,  AKIYAMA, Morito ,  NISHIKUBO, Keiko

IPC分类号： H01L41/316 ,  C23C14/06 ,  H01L41/187

CPC分类号： H01L41/18 ,  C23C14/0052 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/18 ,  C23C14/185 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/46 ,  H01L41/187 ,  H01L41/316

摘要： A piezoelectric thin film (1) is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at% or less. When producing the piezoelectric thin film (1), scandium and aluminum are sputtered simultaneously on a substrate (21) from a scandium aluminum alloy target material (10) having a carbon atomic content of 5 at% or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam (31) on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

公开(公告)号：EP2884551A4

公开(公告)日：2016-03-30

申请号：EP13827792

申请日：2013-07-25

申请人： KONICA MINOLTA INC

发明人： MATSUDA SHINYA

IPC分类号： H01L41/187 ,  B41J2/14 ,  H01L41/08

CPC分类号： H01L41/18 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/053 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319

摘要： A piezoelectric element which includes an undercoat layer and a piezoelectric material layer that have been formed on a substrate, the undercoat layer being for controlling the crystallinity of the piezoelectric material layer. The piezoelectric material layer is configured of crystals having an ABO 3 -type structure which contains at least Pb at the A sites. In the undercoat layer, the surface that faces the interface with the substrate contains, at the A sites, at least Pb and another substance that differs in content from that in the piezoelectric material layer and, at the B sites, substances having a content ratio different from that in the piezoelectric material layer. Due to this, the undercoat layer has a given crystal structure that has better crystallinity than the piezoelectric material layer. In the layer of the undercoat layer which is located upper than the surface that faces the interface with the substrate, the content of the other substance contained in the A sites of the undercoat layer gradually changes from the surface that faces the interface with the substrate to the surface that faces the interface with the piezoelectric material layer, while the content ratio of the substances contained in the B sites gradually changes. Thus, the composition of the undercoat layer comes closer to that of the piezoelectric material layer.

公开(公告)号：EP2800400A4

公开(公告)日：2015-08-19

申请号：EP12862613

申请日：2012-11-22

申请人： OLYMPUS CORP

发明人： ITO HIROSHI

IPC分类号： H01L41/083 ,  A61B8/00 ,  A61B17/32 ,  B06B1/06 ,  H01L41/18 ,  H01L41/25 ,  H01L41/277

CPC分类号： H01L41/083 ,  A61B8/4483 ,  A61B17/320092 ,  A61N7/00 ,  B06B1/0611 ,  H01L41/0833 ,  H01L41/18 ,  H01L41/277

摘要： There is provided an ultrasound transducer device 2 including a plurality of piezoelectric single-crystal plates 44a to 44f that are stacked such that polarization components thereof are alternately inverted. The plurality of piezoelectric single-crystal plates 44a to 44f are stacked such that directions thereof in which strain deformation in a direction orthogonal to a direction of voltage application from electrodes 45a, 45b respectively interposed between the plurality of piezoelectric single-crystal plates becomes largest coincide with each other. There is also provided an ultrasound medical apparatus 1 including the ultrasound transducer device 2.

公开(公告)号：EP2537193B1

公开(公告)日：2014-05-14

申请号：EP11729778.8

申请日：2011-06-07

申请人： Canon Kabushiki Kaisha

发明人： HAYASHI, Jumpei ,  MATSUDA, Takanori ,  WATANABE, Takayuki

IPC分类号： C01F11/00 ,  B08B7/02 ,  C01G33/00 ,  H01L41/43 ,  H01L41/187 ,  H02N2/10 ,  H02N2/16 ,  B41J2/14 ,  C04B35/495

CPC分类号： H01L41/1878 ,  B08B7/026 ,  B41J2/14233 ,  B41J2202/03 ,  C01G33/006 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/6027 ,  C04B2235/605 ,  C04B2235/76 ,  C04B2235/787 ,  C04B2235/81 ,  H01L41/18 ,  H01L41/1871 ,  H01L41/43 ,  H02N2/106 ,  H02N2/163

摘要： A piezoelectric material including a barium bismuth niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.30≦̸a≦̸0.40, and when Bi/Nb=b, 0.012≦̸b≦̸0.084. The tungsten content on a metal basis is 0.40 to 3.00 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

公开(公告)号：EP2658122A1

公开(公告)日：2013-10-30

申请号：EP11850373.9

申请日：2011-12-12

申请人： Murata Manufacturing Co., Ltd.

发明人： KIMURA, Tetsuya ,  OGAMI, Takashi ,  DAIMON, Katsuya

IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/25

CPC分类号： H03H9/02535 ,  H01L41/18 ,  H01L41/1873 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/02574 ,  Y10T29/42

摘要： An elastic wave device using plate waves is provided that requires no cavity and thus can be manufactured by a simplified process and offers high mechanical strength, ease of handling, and improved temperature characteristics. An elastic wave device (1) propagating plate waves has a stack of an acoustic reflection layer (3), a piezoelectric layer (4), and IDT electrode (5) on a supporting substrate 2. The piezoelectric layer (4) is thinner than the period of the fingers of the IDT electrode (5). The acoustic reflection layer (3) has low-acoustic-impedance layers (3b, 3d, 3f, and 3h) and high-acoustic-impedance layers (3a, 3c, 3e, and 3g). The low-acoustic-impedance layers are made of SiO 2 , and the high-acoustic-impedance layers are made of at least one material selected from the group consisting of W, LiTaO 3 , Al 2 O 3 , AIN, LiNbO 3 , SiN, and ZnO.

摘要翻译： 提供了使用平板波的弹性波装置，其不需要空腔，因此可以通过简化的工艺制造并且提供高机械强度，易于处理和改善的温度特性。 传播板波的弹性波装置（1）在支撑基板2上具有声反射层（3），压电层（4）和IDT电极（5）的叠层。压电层（4）比 IDT电极（5）的指状物的周期。 声反射层（3）具有低声阻抗层（3b，3d，3f和3h）和高声阻抗层（3a，3c，3e和3g）。 低声阻抗层由SiO 2制成，高声阻抗层由选自W，LiTaO 3，Al 2 O 3，AlN，LiNbO 3，SiN中的至少一种材料制成 ，和ZnO。

公开(公告)号：EP2615656A2

公开(公告)日：2013-07-17

申请号：EP13150772.5

申请日：2013-01-10

申请人： Samsung Electronics Co., Ltd

发明人： Cha, Seung-nam ,  Kim, Sung-min ,  Sohn, Jung-inn

IPC分类号： H01L41/08 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253 ,  H01L41/29

CPC分类号： H01L41/29 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253

摘要： A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.

摘要翻译： 提供了一种纳米氧电发生器。 纳米氧电发生器包括第一电极; 第二电极; 介于所述第一电极和所述第二电极之间的至少一个纳米结构，并且包括压电材料和第一载体; 以及浓度调节单元，其调节所述至少一个纳米结构中的所述第一载流子的浓度。

公开(公告)号：EP2273552A3

公开(公告)日：2013-04-10

申请号：EP10012530.1

申请日：2002-03-29

申请人： The Regents of the University of California

发明人： Majumdar, Arun ,  Shakouri, Ali ,  Sands, Timothy, D. ,  Yang, Peidong ,  Mao, Samuel, S. ,  Russo, Richard, E. ,  Feick, Henning ,  Kind, Hannes ,  Weber, Eicke R. ,  Huang, Michael H. ,  Yan, Haoquan ,  Wu, Yiying ,  Fan, Rong

IPC分类号： H01L29/06 ,  H01L29/12

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

摘要： A nanowire, comprising:
a core comprising a first material; and
at least one sheath comprising a first sheath surrounding at least a portion of the core, wherein the first sheath comprises a second material which is compositionally different than the first material.

摘要翻译： 一种纳米线，包括：芯部，其包括第一材料; 和至少一个护套包括围绕所述芯的至少一部分上的第一护套，该第一护套worin包括第二材料的所有比所述第一材料组成不同。

公开(公告)号：EP2506431A1

公开(公告)日：2012-10-03

申请号：EP10833163.8

申请日：2010-11-22

申请人： Murata Manufacturing Co., Ltd.

发明人： ITO Korekiyo

IPC分类号： H03H9/145 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17

CPC分类号： H01L41/053 ,  H01L41/18 ,  H01L41/313 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02574 ,  H03H9/05 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T156/1153

摘要： A piezoelectric device having resonance characteristics which are not degraded even if an interlayer for bonding is provided between a piezoelectric thin film and a support member and a method for manufacturing the piezoelectric device are provided. After an ion implanted portion is formed in a piezoelectric single crystal substrate (1) by implantation of hydrogen ions, an interlayer (32) of a metal is formed on a rear surface (12) the piezoelectric single crystal substrate (1). In addition, a support member (30) is bonded to the piezoelectric single crystal substrate (1) with this interlayer (32) interposed therebetween. A composite piezoelectric body (2) in which the ion implanted portion is formed or a composite piezoelectric substrate (3) obtained by heat separation of the piezoelectric single crystal substrate (1) is heated at 450°C to 700°C to oxidize the metal of the interlayer, so that the conductivity thereof is decreased. Accordingly, since the interlayer of a metal is formed, the piezoelectric substrate and the support member can be reliably adhered to each other, and since the metal of the interlayer is oxidized, the conductivity of the interlayer can be decreased, so that a piezoelectric device having excellent resonance characteristics can be provided.

摘要翻译： 其不是即使在层间的粘接劣化的压电设备具有谐振特性的压电薄膜和一支撑构件和用于制造压电装置提供了一种方法之间。 后在离子注入部设置在压电单晶衬底（1）通过氢离子注入在金属的中间层（32）形成的形成在后表面（12）在压电单晶衬底（1）。 此外，支撑构件（30）接合到压电单晶（1）与基板之间有该中间层（32）。 一种复合压电体（2）底物，其中离子注入部分的形成或复合压电（3）通过（1）在450℃下被加热的压电单晶基片的热分离获得至700℃，以氧化金属 中间层的，所以没其导电性降低。 因此，由于金属的中间层形成时，压电基板和所述支撑构件能够可靠地粘附到海誓山盟，并且由于中间层的金属被氧化时，中间层的导电性可以被降低，从而做的压电器件 具有优良的共振特性，可以提供。

公开(公告)号：EP2436661A1

公开(公告)日：2012-04-04

申请号：EP11195995.3

申请日：2009-05-28

申请人： Mitsubishi Materials Corporation

发明人： Fujii, Jun ,  Sakurai, Hideaki ,  Noguchi, Takashi ,  Soyama, Nobuyuki

IPC分类号： C04B35/49 ,  C01G25/00 ,  C04B35/46 ,  H01L21/316

CPC分类号： H01L41/1876 ,  B05D3/02 ,  B05D3/0209 ,  B05D3/04 ,  B05D3/0406 ,  B05D3/0413 ,  B05D3/0453 ,  B05D3/0473 ,  C01G25/006 ,  C01P2002/50 ,  C01P2006/40 ,  C04B24/40 ,  C04B24/42 ,  C04B35/491 ,  C04B35/493 ,  C04B35/624 ,  C04B35/632 ,  C04B35/6325 ,  C04B2111/92 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/44 ,  C04B2235/441 ,  C04B2235/443 ,  C04B2235/447 ,  C04B2235/449 ,  C04B2235/6585 ,  C23C18/1204 ,  C23C18/1225 ,  C23C18/1279 ,  C23C30/00 ,  H01B3/14 ,  H01G4/1245 ,  H01G4/206 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/108 ,  H01L27/11502 ,  H01L28/55 ,  H01L41/18 ,  H01L41/1875 ,  H01L41/318

摘要： Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti (1-z) )O 3 [wherein 0.9

摘要翻译： 公开了一种用于铁电体薄膜形成的所有其在选自PLZT，PZT及PT的选择的一种材料的强电介质薄膜的形成中使用的组合物。 对于强电介质薄膜形成用组合物是用于将形成由通式表示的复合金属氧化物（A）的混合物的混合复合金属氧化物的薄膜的形成的液体组合物（1）：（铅X的La y）的 （锆钛ž（1-Z））O 3 [worin 0.9

公开(公告)号：EP1744378B1

公开(公告)日：2011-07-27

申请号：EP04793393.2

申请日：2004-10-29

申请人： JFE Mineral Company, Ltd.

发明人： MATSUSHITA, Mitsuyoshi

IPC分类号： H01L41/18 ,  H01L41/22 ,  C30B29/32

CPC分类号： C30B29/32 ,  H01L41/18 ,  H01L41/257 ,  H01L41/41 ,  Y10T29/42

摘要： The present invention provides a piezoelectric single crystal device excellent in heat resistance and capable of stably maintaining the electromechanical coupling factor k 31 in a lateral vibration mode at a high value of 50% or more without a decrease even in an operating environment in which the temperature changes from room temperature to a high temperature (specifically, 150°C), and also provides a fabrication method thereof. Specifically, assuming that the [101] axis of a tetragonal system having the [001] axis as a C axis (with the largest lattice constant) is a polarization direction 3, a normal direction 1 to an edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [-101] axis substantially orthogonal to the polarization direction 3, the range including the [-101] axis. Assuming that the [011] axis of the tetragonal system is the polarization direction 3, the normal direction 1 to the edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [0-11] axis substantially orthogonal to the polarization direction 3, the range including the [0-11] axis. In any case, the electromechanical coupling factor k 31 in the direction orthogonal to the polarization direction 3, i.e., in the lateral vibration mode, is 50% or more.