公开(公告)号：EP0841699B1

公开(公告)日：2005-10-26

申请号：EP97308896.6

申请日：1997-11-05

申请人： Shinko Electric Industries Co., Ltd.

发明人： Fujisawa, Akira, Shinko Electric Ind. Co., Ltd. ,  Shibamoto, Tsuyoshi, Shinko Electric Ind. Co. Ltd. ,  Kobayashi, Tsuyoshi, Shinko Electric Ind. Co. Ltd. ,  Watanabe, Shoji, Shinko Electric Ind. Co. Ltd. ,  Ihara, Yoshihiro, Shinko Electric Ind. Co. Ltd.

IPC分类号： H01L23/64

CPC分类号： H01L23/642 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/8547 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19104 ,  Y10S257/924 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

公开(公告)号：EP1402572A1

公开(公告)日：2004-03-31

申请号：EP02748619.0

申请日：2002-06-14

申请人： OTICON A/S

发明人： SKINDHOEJ, Joergen,c/o Oticon A/S ,  PETERSEN, Anders, Erik,c/o Oticon A/S

IPC分类号： H01L21/78 ,  H01L21/98 ,  H01L21/68 ,  H05K3/46

CPC分类号： H01L21/568 ,  H01L21/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/00

摘要： The invention concerns a method for producing miniature amplifier and signal processing unit. The method comprises the steps of: producing arrays of individual integrated circuits on a side of a wafer, where each circuit has a number of I/O connection points; providing a number of solder connection pads at each integrated circuit for redistribution of the I/O connection points of the integrated circuit; coating the side of the wafer having the solder connection pads with a protection coating and ensuing through going apertures in the coating to provide electrical contact with the solder connection pads; applying electrical components onto the coating and gaining electrical contact with the solder connection pads through the apertures of the coating material; singulating the individual amplifiers from the wafer and ensuring light protection of the edges and possible unprotected side of the amplifiers.

公开(公告)号：EP1389340A1

公开(公告)日：2004-02-18

申请号：EP02737083.2

申请日：2002-05-23

申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

发明人： ZOU, Jun ,  LIU, Chang ,  SCHUTT-AINE, Jose

IPC分类号： H01H57/00 ,  H01B1/00

CPC分类号： H01F41/041 ,  H01F17/0006 ,  H01L23/5227 ,  H01L23/66 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/19104 ,  Y10T29/4902 ,  Y10T29/49071 ,  H01L2924/00

摘要： A raised on-chip planar inductor (12). An inductor (12) is fabricated on a substrate (14). The inductor (12), except for an anchoring extremity (24), is lifted from the substrate (14), preferably by application of a magnetic field to a magnetic layer (38) formed on the inductor (12). The lifting of the inductor (12) deforms a plastic bending region (26). After the magnetic field is removed, the inductor (12) remains raised with respect to the substrate (14).

公开(公告)号：EP1347474A1

公开(公告)日：2003-09-24

申请号：EP01915661.1

申请日：2001-03-21

申请人： Hitachi, Ltd. ,  Eastern Japan Semiconductor Technologies, Inc. ,  Akita Electronics Systems Co., Ltd.

发明人： KYOGOKU, Toshihiko c/o AKITA ELECTR.SYST.CO.,LTD. ,  KODU, Tadashi c/o EASTERN JP SEMICOND. TECHN., INC ,  MOCHIDUKI, Kiyoharu EASTERN JP SEMICO.TECHN. INC. ,  KIKUCHI, Sakae Semic.& Integr. Circ.Hitachi LTD. ,  ISHIDU, Akio c/o EASTERN JPN SEMICOND. TECHN., INC ,  KOBAYASHI, Yoshihiko c/o EASTERN JPN SEMIC.TECHN. ,  MARUYAMA, Masashi Semic.& Integr. Hitachi, LTD. ,  KOJIRO, Iwamichi Semic.& Integr. Hitachi, LTD. ,  SATO, Susumu c/o EASTERN JPN SEMICOND. TECHN., INC

IPC分类号： H01F17/02 ,  H01F41/00

CPC分类号： H01L23/645 ,  H01F17/02 ,  H01F27/292 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/24 ,  H03F3/602 ,  H03F3/72 ,  H03F2200/429 ,  H03F2203/7236 ,  H04B2001/0408 ,  H05K1/181 ,  H05K13/028 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2224/05599

摘要： A high frequency power amplifying device has two amplifying lines. Each amplifying line has a configuration in which a plurality of amplifying stages are connected in cascade having two source voltage terminals, of which one is connected to the first amplifying stage of one amplifying line and to the remaining amplifying stages of the other amplifying line, and the other, to the first amplifying stage of the latter amplifying line and to the remaining amplifying stages of the former amplifying line. An air core coil with a low D.C. resistance, formed by spirally winding a copper wire of about 0.1 mm in diameter, is connected in series between the final amplifying stage of each amplifying line and the source voltage terminal. Since there is no signal leak in each amplifying line from the final amplifying stage to the first amplifying stage and the D.C. resistance of the air core coil is low, oscillation margin can be improved. The air core coil is inexpensive, and accordingly can contribute to the cost reduction of the high frequency power amplifying device. Air core coils are fed by a bulk feeder and mounted over a module substrate.

摘要翻译： 高频功率放大装置具有两条放大线。 每个放大线具有这样的配置，其中多个放大级级联连接，具有两个源极电压端子，一个连接到一个放大线路的第一放大级和另一个放大线路的其余放大级，以及 另一个到后一放大线的第一放大级和前一放大线的剩余放大级。 通过螺旋卷绕直径约0.1mm的铜线形成的具有低直流电阻的空芯线圈串联连接在每个放大线的最终放大级与源极电压端子之间。 由于从最终放大级到第一放大级的各放大线中没有信号泄漏，空芯线圈的直流电阻低，所以可以提高振荡裕度。 空芯线圈是廉价的，因此可以有助于高频功率放大装置的成本降低。 空芯线圈由批量进料器供料并安装在模块基板上。

公开(公告)号：EP0887861A1

公开(公告)日：1998-12-30

申请号：EP98401561.0

申请日：1998-06-25

申请人： SGS-THOMSON MICROELECTRONICS S.A. ,  FRANCE TELECOM

发明人： Jaouen, Hervé ,  Marty, Michel

IPC分类号： H01L23/64

CPC分类号： H01L23/48 ,  H01F17/0006 ,  H01L23/645 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2924/01004 ,  H01L2924/01033 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107

摘要： Dispositif semi-conducteur comprenant une pastille formant un circuit intégré et un substrat de connexion, dans lequel sont prévus, entre les faces juxtaposées de la pastille et du substrat, des points ou billes de connexion répartis sous la forme d'une matrice et dans lequel le substrat présente des moyens de connexion extérieure reliés auxdits points de connexion. Il comprend en outre au moins un moyen d'échanges (14) comprenant deux parties (15, 16), notamment des inductances (15, 16) à spires coplanaires couplées par induction magnétique, disposées à distance et au regard l'une de l'autre et susceptibles d'échanger entre elles des signaux, dans un sens et/ou dans l'autre, l'une desdites parties étant intégrée dans ladite pastille et constituant un composant dudit circuit intégré et l'autre partie étant portée par ledit substrat (6) et reliée auxdits moyens de connexion (7).

摘要翻译： 半导体器件由形成集成电路的芯片（2）和连接基板（6）组成，连接点或球（10）位于芯片和基板表面之间，以与外部连接器相连的矩阵的形式分布 8）。 该装置还包括两个部分（15,16）中的至少一个交换器（14），该交换器设置在彼此相距一定距离处并能够沿任一方向交换信号。 其中一个部分集成在芯片中并形成其集成电路的组件，而另一个部分由衬底承载并连接到连接器（10）。 衬底本身形成包含芯片的壳体的壁的一部分。

公开(公告)号：EP3164886A4

公开(公告)日：2018-06-20

申请号：EP14870661

申请日：2014-07-02

申请人： INTEL CORP

发明人： DESHPANDE NITIN ,  MAHAJAN RAVI V

IPC分类号： H01L23/12 ,  H01L21/52 ,  H01L21/60 ,  H01L21/98 ,  H01L23/13 ,  H01L25/065 ,  H01L25/16 ,  H01L29/06

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/76898 ,  H01L23/04 ,  H01L23/13 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L28/00 ,  H01L29/0657 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/15153 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/16251 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83

摘要： An electronic assembly that includes a first electronic device. The first electronic device includes a cavity that extends into a back side of the first electronic device. The electronic assembly further includes a second electronic device. The second electronic device is mounted to the first electronic device within the cavity in the first electronic device. In some example forms of the electronic assembly, the first electronic device and the second electronic device are each a die. It should be noted that other forms of the electronic assembly are contemplated where only one of the first electronic device and the second electronic device is a die. In some forms of the electronic assembly, the second electronic device is soldered to the first electronic device.

公开(公告)号：EP2958143B1

公开(公告)日：2017-12-27

申请号：EP15177142.5

申请日：2010-07-09

申请人： Oracle America, Inc. formerly known as Sun Microsystems, Inc.

发明人： DROST, Robert J ,  MITCHELL, James G. ,  DOUGLAS, David C.

IPC分类号： H01L25/065 ,  H01L21/60 ,  H01L23/28

CPC分类号： H01L25/0657 ,  H01L23/3121 ,  H01L23/642 ,  H01L23/645 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/48 ,  H01L24/72 ,  H01L24/90 ,  H01L25/0652 ,  H01L29/0657 ,  H01L2223/6638 ,  H01L2224/13099 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48137 ,  H01L2224/48157 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01067 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A chip package is described (450). This chip package includes a stack of semiconductor dies (110-1,110-2,110-N) or chips that are offset from each other, thereby defining a terrace with exposed pads. A ramp component (112), which is positioned approximately parallel to the terrace, electrically couples to the exposed pads. Mechanical stops (460-1) are formed on respective semiconductor die for mechanical contact between the semiconductor die and the ramp component. The ramp component is electrically coupled to the semiconductor dies using microsprings (114). Consequently, the electrical contacts may have a conductive, a capacitive or, in general, a complex impedance. By removing the need for costly and area-consuming through-silicon vias ( TSV s) in the semiconductor dies, the chip package facilitates chips to be stacked in a manner that provides high bandwidth and low cost.

公开(公告)号：EP3193366A2

公开(公告)日：2017-07-19

申请号：EP17159006.0

申请日：2009-07-23

申请人： ATI Technologies ULC

发明人： MCLELLAN, Robert Neil ,  GUO, Fei ,  CHUNG, Daniel ,  CHEUNG, Terence

IPC分类号： H01L23/522 ,  H01L23/485

CPC分类号： H01L23/5223 ,  H01G4/008 ,  H01G4/01 ,  H01G4/33 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/642 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/02375 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05576 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1133 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/14133 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A method of manufacturing a capacitor in a semiconductor chip; the semiconductor chip manufactured with this method. The method comprises forming a first conductor structure on a semiconductor chip to serve as a first capacitor plate, the first conductor structure including a layer, the layer having a first plurality of commonly tied lines, forming a passivation structure on the first conductor structure, forming a first under bump metallization structure on the passivation structure overlapping at least a portion of the first plurality of commonly tied lines to serve as a second capacitor plate, and applying a polymer layer to the under bump metallization structure to provide structural protection for the under bump metallization structure.

摘要翻译： 一种制造半导体芯片中的电容器的方法; 用这种方法制造的半导体芯片。 该方法包括在半导体芯片上形成第一导体结构以用作第一电容器板，第一导体结构包括层，该层具有第一多条公共连接线，在第一导体结构上形成钝化结构，形成 钝化结构上的第一凸块下金属化结构与第一多个公共连接线的至少一部分交叠以用作第二电容器板，并且将聚合物层施加到凸块下金属化结构以为下凸块提供结构保护 金属化结构。

公开(公告)号：EP3058588A4

公开(公告)日：2017-05-31

申请号：EP13895640

申请日：2013-10-15

申请人： INTEL CORP

发明人： SANKMAN ROBERT L ,  NIKONOV DMITRI E ,  PAN JIN

IPC分类号： H01L23/29 ,  H01L23/00 ,  H01L23/552 ,  H01L25/065

CPC分类号： H01L43/02 ,  G06F1/1633 ,  H01L23/295 ,  H01L23/552 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/0657 ,  H01L43/12 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06537 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/19104 ,  H01L2924/3025 ,  H05K9/0075 ,  H01L2224/45099

公开(公告)号：EP3158839A1

公开(公告)日：2017-04-26

申请号：EP15812624.3

申请日：2015-06-23

申请人： Zglue, Inc.

发明人： NASRULLAH, Jawad ,  ZHANG, Ming

IPC分类号： H05K7/14 ,  H05K1/14

CPC分类号： H01L22/34 ,  G06F17/5077 ,  H01L22/14 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81908 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/1531 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A system according to some examples herein includes a base chip which may include a plurality of attachment slots for attaching dies thereto. One or more of the attachment slots may be programmable attachment slots. The base chip may further include circuitry for interconnecting the dies attached to the base chip. For example, the base chip may include a plurality of cross bar switches, each of which is associated with respective ones of the plurality of attachment slots. The base chip may further include a configuration block, which is adapted to receive and transmit test signals for determining electrically connected signal lines of one or more attachment slots when one or more dies are attached to the base chip and which is further adapted to receive configuration data for programming signal (including power and ground) channels of the cross bar switches.

摘要翻译： 一种系统gemäß到在一些实施例中包括一个基片，其可包括附连槽的多个用于附连到其上。 一个或多个附连槽的可以是可编程的附连槽。 基底芯片还可以包括电路，其用于互连以便附接到基座芯片。 对于实施例，基底芯片可以包括横杆交换机的复数，每个的所有其与附接槽的多个respectivement者相关联。 基底芯片还可以包括一个配置块，所有这些是angepasst接收和发送一个或多个附连槽的确定性采矿电连接的信号线的测试信号。当一个或多个这些被连接到基座芯片和所有其进一步angepasst接收配置 用于编程信号（包括电源和地）横杆交换机的信道的数据。