公开(公告)号：EP3336895A2

公开(公告)日：2018-06-20

申请号：EP17207632.5

申请日：2017-12-15

申请人： Semiconductor Manufacturing International Corporation (Beijing) ,  Semiconductor Manufacturing International Corporation (Shanghai)

发明人： ZHOU, Ming

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L27/0207 ,  C01B21/0828 ,  C07F7/0803 ,  H01L21/02074 ,  H01L21/0212 ,  H01L21/31127 ,  H01L21/76811 ,  H01L21/76829 ,  H01L23/528 ,  H01L23/53295

摘要： A method for manufacturing an interconnect structure includes providing a metal interconnect layer, forming a dielectric layer (202) on the metal interconnect layer, forming a fluorocarbon layer (301) on the dielectric layer, forming a patterned hardmask layer on the fluorocarbon layer, etching the fluorocarbon layer and the dielectric layer using the patterned hardmask layer as a mask to form a trench in the dielectric layer and a through-hole through the dielectric layer to the metal interconnect layer, forming a metal layer filling the trench and the through-hole, and planarizing the metal layer until the planarized metal layer (801) has an upper surface that is flush with an upper surface of the fluorocarbon layer. The interconnect structure thus formed has an improved reliability.

公开(公告)号：EP3336126A1

公开(公告)日：2018-06-20

申请号：EP17205302.7

申请日：2017-12-04

申请人： Rohm and Haas Electronic Materials LLC

发明人： KINZIE, Charles R. ,  GREENE, Daniel ,  GILMORE, Christopher ,  CAMERON, James F. ,  DING, Ping ,  WANG, Qing-Min ,  KIM, Young-Seok

IPC分类号： C08G61/10 ,  C08G61/12 ,  C09D165/02 ,  C08L65/02 ,  H01L23/532

CPC分类号： C08F32/06 ,  C07C49/537 ,  C08G61/10 ,  C08G61/12 ,  C08G2261/135 ,  C08G2261/1426 ,  C08G2261/312 ,  C08G2261/46 ,  C08G2261/64 ,  C08G2261/65 ,  C08G2261/76 ,  C08L45/00 ,  C08L65/02 ,  C08L67/03 ,  C09D165/02 ,  H01L23/5329

摘要： Certain cyclopentadienone monomers having polar moieties are useful in forming polyarylene resins having improved solubility in certain organic solvents and are useful in forming polyarylene resin layers in electronics applications.

公开(公告)号：EP3304592A1

公开(公告)日：2018-04-11

申请号：EP16730939.2

申请日：2016-05-31

申请人： Raytheon Company

发明人： LAROCHE, Jeffrey R. ,  BETTENCOURT, John P. ,  KAZIOR, Thomas E. ,  IP, Kelly P.

IPC分类号： H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/66 ,  H01L21/76838 ,  H01L21/76847 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2223/6627 ,  H01L2223/6683

摘要： A semiconductor structure having a semiconductor layer having an active device therein. A dielectric structure is disposed over the semiconductor layer, such dielectric structure having open ended trench therein. An electrical interconnect level is disposed in the trench and electrically connected to the active device. A plurality of stacked metal layers is disposed in the trench. The stacked metal layers have disposed on bottom and sidewalls thereof conductive barrier metal layers.

公开(公告)号：EP3133637B1

公开(公告)日：2018-04-11

申请号：EP16191043.5

申请日：2005-10-04

申请人： Fujitsu Semiconductor Limited

发明人： KOURA, Yumiko ,  KITADA, Hideki ,  OZAWA, Kiyoshi

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/2885 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： To manufacture a semiconductor device with copper plugs and/or wirings, the following steps are performed. (a) A copper alloy film (16, 17) containing at least two metallic elements in addition to copper is formed on the surface of an insulator (15) containing oxygen and formed on a semiconductor substrate (1). (b) A metal film (18) made of pure copper or copper alloy is formed on the copper alloy film (16, 17). (c) After step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator (15) and the metallic elements in the copper alloy film (16, 17).

公开(公告)号：EP2221864B1

公开(公告)日：2018-04-11

申请号：EP10163473.1

申请日：2006-12-04

申请人： Ulvac, Inc.

发明人： Yoshihama, Tomoyuki ,  Harada, Masamichi ,  Toyoda, Satoru ,  Ushikawa, Harunori

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.

公开(公告)号：EP3155650A4

公开(公告)日：2018-03-14

申请号：EP14894934

申请日：2014-06-16

申请人： INTEL CORP

发明人： CHEBIAM RAMANAN V ,  JEZEWSKI CHRISTOPHER J ,  INDUKURI TEJASWI K ,  CLARKE JAMES S ,  PLOMBON JOHN J

IPC分类号： H01L21/321 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76882 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53242 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present disclosure describe removing seams and voids in metal interconnects and associated techniques and configurations. In one embodiment, a method includes conformally depositing a metal into a recess disposed in a dielectric material to form an interconnect, wherein conformally depositing the metal creates a seam or void in the deposited metal within or directly adjacent to the recess and heating the metal in the presence of a reactive gas to remove the seam or void, wherein the metal has a melting point that is greater than a melting point of copper. Other embodiments may be described and/or claimed.

公开(公告)号：EP3101685A4

公开(公告)日：2018-03-14

申请号：EP14824341

申请日：2014-01-29

申请人： RENESAS ELECTRONICS CORP

发明人： IGRARASHI TAKAYUKI ,  FUMAYA TAKUO

IPC分类号： H01L21/822 ,  H01L23/00 ,  H01L23/495 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L23/5227 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/5283 ,  H01L23/53214 ,  H01L23/53223 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/167 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2924/00014

摘要： Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL1 and a wiring M2 formed on an interlayer insulator IL2, a wiring M3 formed on an interlayer insulator IL3, and a coil CL2 and a wiring M4 formed on the interlayer insulator IL4. Moreover, a distance DM4 between the coil CL2 and the wiring M4 is longer than a distance DM3 between the coil CL2 and the wiring M3 (DM4 > DM3). Furthermore, the distance DM3 between the coil CL2 and the wiring M3 is set to be longer than a sum of a film thickness of the interlayer insulator IL3 and a film thickness of the interlayer insulator IL4, which are positioned between the coil CL1 and the coil; CL2. In this manner, it is possible to improve an insulation withstand voltage between the coil CL2 and the wiring M4 or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region 1A and a seal ring formation region 1C surrounding a peripheral circuit formation region 1B are formed so as to improve the moisture resistance.

公开(公告)号：EP3279925A1

公开(公告)日：2018-02-07

申请号：EP16773200.7

申请日：2016-03-31

申请人： Hamamatsu Photonics K.K.

发明人： HOSOKAWA Noburo ,  INOUE Nao ,  SHIBAYAMA Katsumi

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/00014

摘要： A semiconductor device 1 includes a semiconductor substrate 2 in which a through hole 7 is formed, a first wiring 3 that is provided on a first surface 2a of the semiconductor substrate 2, an insulating layer 10 provided on an inner surface 7c of the through hole 7 and a second surface 2b of the semiconductor substrate 2, and a second wiring 8 that is provided on a surface 10b of the insulating layer 10 and electrically connected to the first wiring 3 in an opening 10a. The surface 10b of the insulating layer 10 includes a first region 11, a second region 12, a third region 13, a fourth region 14 that is curved to continuously connect the first region 11 and the second region 12, and a fifth region 15 that is curved to continuously connect the second region 12 and the third region 13. An average inclination angle of the second region 12 is smaller than an average inclination angle of the first region 11 and is smaller than an average inclination angle of the inner surface 7c.

摘要翻译： 半导体装置1具有：形成有贯通孔7的半导体基板2;设置在半导体基板2的第1面2a上的第1布线3;设置在该贯通孔的内表面7c上的绝缘层10 7和半导体衬底2的第二表面2b;以及第二布线8，设置在绝缘层10的表面10b上并且在开口10a中与第一布线3电连接。 绝缘层10的表面10b包括第一区域11，第二区域12，第三区域13，弯曲以连续连接第一区域11和第二区域12的第四区域14，以及第五区域15 弯曲以连续地连接第二区域12和第三区域13.第二区域12的平均倾斜角度小于第一区域11的平均倾斜角度并且小于内表面7c的平均倾斜角度。

公开(公告)号：EP3270408A1

公开(公告)日：2018-01-17

申请号：EP16767997.6

申请日：2016-03-15

申请人： Toppan Printing Co., Ltd.

发明人： IKEDA, Noriaki ,  NISHIZAWA, Makoto

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/283 ,  H01L21/768 ,  H01L23/532 ,  H01L29/786

CPC分类号： H01L29/7869 ,  G02F1/136 ,  H01L21/28 ,  H01L21/283 ,  H01L21/768 ,  H01L23/532 ,  H01L27/1259 ,  H01L27/3258 ,  H01L27/3274 ,  H01L29/41733 ,  H01L29/6675 ,  H01L29/786 ,  H01L51/0545

摘要： In an organic semiconductor thin-film transistor having layers formed by a wet film formation method such as a printing method, a thin-film transistor that exhibits good characteristics is provided. The thin-film transistor includes an insulative substrate; a gate electrode formed on the insulative substrate; a gate insulating layer formed on the substrate and the gate electrode; a source electrode and a drain electrode formed on the gate insulating layer to be spaced from each other; a semiconductor layer formed on the gate insulating layer to be connected to the source electrode and the drain electrode; a semiconductor protective layer formed on the semiconductor layer; an interlayer insulating film formed on the source electrode, the drain electrode and the semiconductor protective layer, the interlayer insulating film containing a fluorine compound; and an upper electrode formed on the interlayer insulating film.

摘要翻译： 在具有通过诸如印刷法的湿式成膜法形成的层的有机半导体薄膜晶体管中，提供了表现出良好特性的薄膜晶体管。 薄膜晶体管包括绝缘基板; 形成在绝缘基板上的栅电极; 形成在衬底和栅电极上的栅极绝缘层; 源电极和漏电极，形成在栅绝缘层上以彼此间隔开; 形成在栅绝缘层上以与源电极和漏电极连接的半导体层; 形成在半导体层上的半导体保护层; 在所述源电极，所述漏电极和所述半导体保护层上形成的层间绝缘膜，所述层间绝缘膜含有氟化合物; 以及形成在层间绝缘膜上的上电极。

公开(公告)号：EP3264458A1

公开(公告)日：2018-01-03

申请号：EP17178818.5

申请日：2017-06-29

申请人： Semiconductor Manufacturing International Corporation (Shanghai) ,  Semiconductor Manufacturing International Corporation (Beijing)

发明人： ZHOU, Ming

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53233 ,  H01L21/485 ,  H01L21/768 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76849 ,  H01L21/76895 ,  H01L21/823475 ,  H01L21/823871 ,  H01L23/29 ,  H01L23/4928 ,  H01L23/53238

摘要： An interconnect structure includes a substrate, a dielectric layer (220) on the substrate, a metal interconnect layer (230) in the dielectric layer and in contact with the substrate, the metal interconnect layer having an upper surface flush with an upper surface of the dielectric layer, and a graphene layer (260) on the metal interconnect layer. The graphene layer insulates a metal from air and prevents the metal from being oxidized by oxygen in the air, thereby increasing the queue time for the CMP process and the device reliability.

摘要翻译： 一种互连结构，包括衬底，衬底上的电介质层（220），电介质层中的金属互连层（230）以及与衬底接触，金属互连层具有与上表面齐平的上表面 介电层以及金属互连层上的石墨烯层（260）。 石墨烯层将金属与空气隔离并防止金属被空气中的氧气氧化，从而增加了CMP工艺的排队时间和器件的可靠性。