SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND IMAGE DISPLAY DEVICE
    4.
    发明公开
    SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND IMAGE DISPLAY DEVICE 有权
    半导体器件,制造半导体器件和图像显示装置的方法

    公开(公告)号:EP2169721A4

    公开(公告)日:2013-02-27

    申请号:EP08790123

    申请日:2008-07-01

    Applicant: PANASONIC CORP

    CPC classification number: H01L51/057 B82Y10/00 H01L27/3274 H01L51/0004

    Abstract: A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device employing the semiconductor device is also provided. A semiconductor device comprises a resin film having a through hole; and a semiconductor element comprising a gate electrode disposed on the inner wall of the through hole, an insulating layer that covers the gate electrode within the through hole, an organic semiconductor disposed on the insulating layer within the through hole, and a source electrode and a drain electrode which are electrically connected to the organic semiconductor.

    Abstract translation: 具有半导体器件的半导体元件设置有更高的密度,并且提供了用于制造其的方法。 因此提供了一种图像显示装置,用人半导体装置。 一种半导体器件包括具有通孔的树脂薄膜; 和包括设置在所述通孔的内壁的栅电极的半导体元件,在绝缘层孔做覆盖贯通内设置在所述绝缘层上的有机半导体的贯通,孔中的栅电极,以及源电极和一个 漏电极被电连接至有机半导体。

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