Abstract:
A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided. A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, an organic semiconductor disposed inside the through hole, an insulating film on one end of the organic semiconductor, a gate electrode on the insulating film, a source electrode connected electrically to the other end of the organic semiconductor and a drain electrode connected electrically to the other end of the organic semiconductor.
Abstract:
A method for fabricating a flexible semiconductor device includes: preparing a layered film 80 including a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40 which are sequentially formed; etching the first metal layer 10 to form a gate electrode 12g; compression bonding a resin layer 50 to a surface of the layered film 80 provided with the gate electrode 12g to allow the gate electrode 12g to be embedded in the resin layer 50; and etching the second metal layer 40 to form a source electrode 42s and a drain electrode 42d, wherein the inorganic insulating layer 20 on the gate electrode 12g functions as a gate insulating film 22, and the semiconductor layer 30 between the source electrode 42s and drain electrode 42d on the inorganic insulating layer 20 functions as a channel 32.
Abstract:
A semiconductor device having semiconductor elements disposed with higher density and a method for manufacturing the same are provided. An image display device employing the semiconductor device is also provided. A semiconductor device comprises a resin film having a through hole; and a semiconductor element comprising a gate electrode disposed on the inner wall of the through hole, an insulating layer that covers the gate electrode within the through hole, an organic semiconductor disposed on the insulating layer within the through hole, and a source electrode and a drain electrode which are electrically connected to the organic semiconductor.
Abstract:
The invention involves mounting a solder resin composition (6) including a solder powder (5a) and a resin (4) on the first electronic component (2); arranging such that the connecting terminals (3) of the first electronic component (2) and the electrode terminals (7) of the second electronic component (8) are facing each other; ejecting a gas (9a) from a gas generation source (1) included in the first electronic component (2) by heating the first electronic component (2) and the solder resin composition; and inducing the flow of the solder powder (5a) in the solder resin composition (6) by inducing convection of the gas (9a) in the solder resin composition (6), and electrically connecting the connecting terminals (3) and the electrode terminals (7) by self-assembly on the connecting terminals (3) and the electrode terminals (7). Through this are provided a flip chip packaging method that enables connecting, with high connection reliability, electrode terminals of a semiconductor chip wired with narrow pitch and connecting terminals of a circuit board, and a bump formation method for packaging on a circuit board.
Abstract:
There is provided a flip chip mounting process which is high in productivity and reliability, and thus can be applicable to the flip chip mounting of the next-generation LSI. This flip chip mounting process comprises the steps of supplying a resin (13) containing solder powder and a convection additive (12) onto a wiring substrate (10) having a plurality of electrode terminals (11), then bringing a semiconductor chip (20) having a plurality of connecting terminals (11) into contact with a surface of the supplied resin (13), and then heating the wiring substrate (10) to a temperature that enables the solder powder to melt. This heating step is carried out at a temperature higher than the boiling point of the convection additive (12) to allow the boiling convection additive (12) to move within the resin (12). During this heating step, the melted solder powder is allowed to self-assemble into the region between each electrode terminal (11) of the wiring substrate (10) and each connecting terminal (21) of the semiconductor chip to form an electrical connection between each electrode terminal (11) and each connecting terminal (21). Finally, the resin is cured so as to secure the semiconductor chip (20) to the wiring substrate (10).
Abstract:
A wiring board for mounting an LED bare chip capable of firmly joining an LED bare chip and improving yield. A printed wiring board (2), wherein the interval D between oppositely-disposed wiring patterns (81, 85) in a relevant opposing region is the smallest at a portion close to the center (point G) of an LED chip (14) when it is disposed at a designed position and is gradually larger as it is increasingly separated from the point G, in addition, the pattern edges (83, 87) of the wiring patterns (81, 85) at a portion where the interval is larger are formed to be gradually separated from each other with respect to the electrode edges (148, 149) of the LED chip (14) in the direction of widening the interval as they are increasingly separated from the point G.