公开(公告)号：EP1321979A3

公开(公告)日：2005-10-12

申请号：EP02257616.9

申请日：2002-11-04

申请人： SHARP KABUSHIKI KAISHA

发明人： Nishikawa, Masataka

IPC分类号： H01L23/00 ,  H01L23/28

CPC分类号： H01L24/85 ,  H01L23/4334 ,  H01L23/49855 ,  H01L23/564 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05686 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2224/85148 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2224/78 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/05432 ,  H01L2924/013 ,  H01L2924/01404

摘要： A semiconductor module includes: a printed wiring board made of an insulator with conductor patterns formed on both sides thereof. An IC chip is mounted on the printed wiring board and sealed with a resin. A metallic sheet or a moisture penetration blocking sheet is adhered on the IC chip surface opposite to the side that faces the printed wiring board. The semiconductor module provides high reliability against heavy environment conditions such as high humidity or vapor pressurised atmosphere. The production method to manufacture such a semiconductor module is described.

公开(公告)号：EP0997939B1

公开(公告)日：2005-09-07

申请号：EP99308579.4

申请日：1999-10-29

申请人： SHINKO ELECTRIC INDUSTRIES CO. LTD.

发明人： Higashi, Mitsutoshi, Shinko Electric Ind. Co. Ltd. ,  Sakaguchi, Hideaki, Shinko Electric Ind. Co. Ltd. ,  Imai, Kazunari, Shinko Electric Ind. Co. Ltd. ,  Kyozuka, Masahiro, Shinko Electric Ind. Co. Ltd. ,  Shimizu, Mitsuharu, Shinko Electric Ind. Co. Ltd.

IPC分类号： H01L23/49 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L24/12 ,  H01L21/563 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/1134 ,  H01L2224/11822 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13582 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/81011 ,  H01L2224/85148 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2224/29099 ,  H01L2224/48 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor element (10) having an electrode formation surface on which an electrode terminal (14) and a re-wiring portion (18) are formed. The re-wiring portion (18) is electrically connected to the electrode terminal (14). An external terminal (12) made of wire has a base end connected to the re-wiring portion (18) and a distal end extending therefrom. An electrically insulating resin (30) covers the electrode formation surface in such a manner that at least the distal end of the external terminal (12) is exposed outside the insulating resin. During a fabricating process, the electrode formation surface is coated with an electrically insulating resin (30) and then a part of the electrically insulating resin is removed from the distal end (12a) of the external connecting terminal (12) to expose the same outside the insulating resin.

公开(公告)号：EP0494510A3

公开(公告)日：1993-05-12

申请号：EP91311386.6

申请日：1991-12-06

申请人： F & K Delvotec Bondtechnik GmbH

发明人： Farassat, Farhad

IPC分类号： B23K20/00

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/45 ,  H01L24/78 ,  H01L2224/45147 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85148 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2224/48 ,  H01L2924/00

摘要： A bonding head 18 for an automatic wire bonding machine, comprises a flame-off electrode 2 which is adapted to be lifted away from an operative position in which it is used to form a ball 36 on the end of the bonding wire 38 and a capillary 34 through which the bonding wire 38 is supplied to the flame-off electrode 2. The capillary 34 is also adapted to apply pressure and ultrasonic energy to the wire 38 when it is in contact with the surface to which it is to be bonded. The flame-off electrode 2 is adapted to be lifted away from the operative position by movement of the bond head 18 from a flame-off position to a bonding position.

公开(公告)号：EP0903780A2

公开(公告)日：1999-03-24

申请号：EP98116369.4

申请日：1998-08-28

申请人： Texas Instruments Incorporated

发明人： Orcutt, John W.

IPC分类号： H01L21/60 ,  H01L23/49

CPC分类号： H01L24/85 ,  H01L23/49816 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48465 ,  H01L2224/4848 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/8503 ,  H01L2224/85051 ,  H01L2224/85148 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit in a package having a ground(13) and/or power ring (16) and bond wires (19) crossing the ground and/or power ring, the bond wires further coupled to signal traces (21). A semiconductor integrated circuit (17) is provided in a die cavity (12) in a substrate. Signal traces are formed on the surface of the substrate (11). At least one conductive area is formed surrounding the die cavity. At least one signal trace is formed on the substrate and electrically isolated from the conductive ring. Bond wires are used to couple the die bond pads (21) to the signal traces. At least some of the bond wires are coupled to signal traces and must cross the conductive ring. The bond wires are raised a clearance distance over the power or ground ring by forming a spacer (24) on the inner end of the signal traces. The spacer formed on the signal trace then provides a clearance spacing to prevent the bond wires which cross the power ring from becoming shorted to the power ring. Typically, the spacer is formed as a bond wire ball placed on the signal trace. Typically the conductive ring is used as a ground ring, or as a voltage supply ring, for the integrated circuit. Multiple power or ground rings are used in some embodiments. Other devices and methods are described.

摘要翻译： 封装中的集成电路具有接地（13）和/或功率环（16）以及与接地和/或功率环交叉的接合线（19），接合线还耦合到信号迹线（21）。 半导体集成电路（17）设置在衬底中的模腔（12）中。 信号迹线形成在衬底（11）的表面上。 围绕模腔形成至少一个导电区域。 至少一个信号迹线形成在衬底上并与导电环电隔离。 键合线用于将管芯键合焊盘（21）耦合到信号迹线。 至少一些键合线被耦合到信号迹线并且必须穿过导电环。 通过在信号迹线的内端形成间隔物（24），键合线在电源或接地环上升高间隙距离。 形成在信号迹线上的隔离物然后提供间隙空间以防止穿过电源环的键合线与电源环短路。 典型地，间隔物形成为放置在信号迹线上的接合线球。 通常，导电环用作集成电路的接地环或电压供应环。 在一些实施例中使用多个电源或接地环。 描述了其他设备和方法。

公开(公告)号：EP0258869B1

公开(公告)日：1994-05-18

申请号：EP87112737.9

申请日：1987-09-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yamanaka, Kazuyuki ,  Shibasaka, Mitsusada

IPC分类号： H01L21/00 ,  H01L21/60

CPC分类号： H01L21/67144 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/48 ,  H01L2224/85148 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01082 ,  H01L2224/45099 ,  H01L2224/05599

公开(公告)号：EP0258869A2

公开(公告)日：1988-03-09

申请号：EP87112737.9

申请日：1987-09-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yamanaka, Kazuyuki ,  Shibasaka, Mitsusada

IPC分类号： H01L21/00 ,  H01L21/60

CPC分类号： H01L21/67144 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/48 ,  H01L2224/85148 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01082 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Wire-bonding of a semiconductor device designed in accordance with the CAD system is implemented on the basis of bonding data obtained by making use of the design data in the CAD system. For the design data in the CAD system, coordinate data of the bonding pads and the lead frames and wiring information therebetween are used. Since ordinarily the coordinate system in the CAD system and the coordinate system in the wire-bonding apparatus are not equal to each other, coordinate transformation is applied to the bonding data obtained from the CAD system. The data thus transformed is delivered to the bonding unit. Since there is employed a scheme to utilize the design data in the CAD system, the necessity of inputting bonding data by an operator is eliminated, thus making it possible to carry out bonding work free from an error in a short time.

摘要翻译： 基于通过使用CAD系统中的设计数据获得的结合数据来实现根据CAD系统设计的半导体器件的线接合。 对于CAD系统中的设计数据，使用接合焊盘和引线框架的坐标数据以及它们之间的接线信息。 由于通常CAD系统中的坐标系和引线键合装置中的坐标系彼此不相等，因此对从CAD系统获得的结合数据应用坐标变换。 将如此变换的数据传送到接合单元。 由于采用在CAD系统中利用设计数据的方案，消除了由操作者输入接合数据的必要性，因此能够在短时间内进行无错误的接合工作。

公开(公告)号：EP0058852B1

公开(公告)日：1987-06-03

申请号：EP82100766.3

申请日：1982-02-03

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： Wurz, Erwin, Ing.grad.

IPC分类号： H01L23/48

CPC分类号： H01L23/49575 ,  H01L23/52 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/85148 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/14 ,  Y10S257/909 ,  H01L2924/00 ,  H01L2224/45099

公开(公告)号：EP0791955A2

公开(公告)日：1997-08-27

申请号：EP97102764.4

申请日：1997-02-20

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hortaleza, Edgardo R. ,  Hogan, Timothy

IPC分类号： H01L21/607

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K2201/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78301 ,  H01L2224/78302 ,  H01L2224/85099 ,  H01L2224/85148 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20107 ,  H01L2924/20309 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012 ,  H01L2224/85399

摘要： An apparatus (304) and method is provided for bonding wire (104) to bond sites (108) of integrated circuits (110), lead frames, and packages at room temperatures. In preferred embodiments a ball end (106) of a gold wire (104) is bonded to an aluminum bond pad (108). Apparatus (304) includes a high frequency ultrasonic energy source (306) designed to provide ultrasonic energy at frequencies above 200 kHz. The ultrasonic energy is transmitted to the bonding interface via capillary (302). In this manner, a strong bond is formed between ball end (106) and bonding site (108). The apparatus and method provided enable bonds of sufficient shear strength to be fabricated in a sufficiently short bonding time even at ambient temperatures, enabling the efficient fabrication of temperature sensitive devices such as micromechanical structures.

摘要翻译： 提供了一种设备（304）和方法，用于在室温下将线（104）接合到集成电路（110），引线框架和封装的接合位置（108）。 在优选实施例中，金线（104）的球端（106）被结合到铝接合垫（108）。 设备（304）包括被设计成在200kHz以上的频率处提供超声波能量的高频超声能量源（306）。 超声能量通过毛细管（302）传递到接合界面。 以这种方式，在球端（106）和结合部位（108）之间形成强结合。 所提供的装置和方法使得即使在环境温度下也能以足够短的粘合时间制造足够的剪切强度的粘合，从而能够有效地制造诸如微机械结构的温度敏感装置。

公开(公告)号：EP0492933A2

公开(公告)日：1992-07-01

申请号：EP91311696.8

申请日：1991-12-17

申请人： nCHIP, INC.

发明人： Tuckerman, David B ,  Mhasker, Pandharinath A ,  Benson, Donald ,  Bobra, Yogendra ,  Lang, Charles R ,  Thalapeneni, Garunada N ,  Schoenholtz, Joseph Jr ,  McWilliams, Bruce M ,  Brathwaite, Nicholas E

IPC分类号： H01L23/64 ,  H01L25/065

CPC分类号： H01L24/85 ,  H01L23/642 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/85148 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351 ,  H05K1/16 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A multichip module for interconnecting a plurality of integrated circuits. A thick layer of silicon dioxide, up to 20 µm, serves as a dielectric to separate metal signal layers from power and ground planes. The multichip module also has a capacitor formed over a support base material which need not be conductive. A metal interconnect structure for a multichip module used for interconnecting a plurality of integrated circuits. The module interconnects can be provided with termination resistors and can also be formed to have a multiple padout structure. Reverse wedge wire bonding is also used to electrically connect the integrated circuit to the module allowing greater chip densities on the module surface. The chip/module assembly can then be mounted on a printed circuit board and the module leads wired directly to the board.

摘要翻译： 一种用于互连多个集成电路的多芯片模块。 高达20微米的厚二氧化硅层用作将金属信号层与电源层和接地层分开的电介质。 多芯片模块还具有形成在不需要导电的支撑基材上的电容器。 一种用于互连多个集成电路的多芯片模块的金属互连结构。 模块互连可以设置有终端电阻器，并且还可以形成为具有多个padout结构。 反向楔形线接合也用于将集成电路电连接到模块，从而允许模块表面上的更大的芯片密度。 芯片/模块组件然后可以安装在印刷电路板上，模块引线直接连接到电路板。

公开(公告)号：EP0397426A2

公开(公告)日：1990-11-14

申请号：EP90304901.3

申请日：1990-05-04

申请人： Citizen Watch Co. Ltd.

发明人： Ohi, Masayuki

IPC分类号： H01L21/60

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48479 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78302 ,  H01L2224/85051 ,  H01L2224/85148 ,  H01L2224/85203 ,  H01L2224/85986 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2224/85186 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/4554

摘要： In an IC packaging structure, ball bonding is per­formed on patterns (4) on a circuit substrate (1) as first bonding, and ballless bonding is performed on pad electrodes (5) on an IC chip (2) as second bonding. An IC packaging method includes a first step of forming a gold ball electrode (5a) on each of pad electrodes (5) of an IC chip, a second step of ball-bonding one end of a gold wire (6) on each of patterns of a circuit substrate, and a third step of thermally com­pression-bonding the other end of the gold wire on a corre­sponding one of the gold ball electrodes formed on the pad electrodes.

摘要翻译： 在IC封装结构中，作为第一接合，在电路基板（1）上的图案（4）上进行球接，并且作为第二接合对IC芯片（2）上的焊盘电极（5）进行无球接合。 IC封装方法包括在IC芯片的每个焊盘电极（5）上形成金球电极（5a）的第一步骤，将金线（6）的一端与每个图案 以及将形成在焊盘电极上的相应的一个金球电极上的金线的另一端热压接的第三步骤。