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    Multi-unit Modular Stackable Switched Reluctance Motor System with Parallely Excited Low Reluctance Circumferential Magnetic Flux loops for High Torque Density Generation
    1.
    发明申请
    Multi-unit Modular Stackable Switched Reluctance Motor System with Parallely Excited Low Reluctance Circumferential Magnetic Flux loops for High Torque Density Generation 审中-公开
    具有并联励磁低阻抗的多单元模块化可堆叠开关磁阻电机系统，用于高扭矩密度发电

    公开(公告)号：US20120001502A1

    公开(公告)日：2012-01-05

    申请号：US13174551

    申请日：2011-06-30

    Applicant: Yee-Chun Lee ,  Chung Ching Yang

    Inventor： Yee-Chun Lee ,  Chung Ching Yang

    IPC: H02K37/08

    CPC classification number: H02K19/103 ,  H02K16/00 ,  H02K2201/12 ,  H02K2213/12

    Abstract: The present invention is a apparatus of multi-unit modular stackable switched reluctance motor system with parallely excited low reluctance circumferential magnetic flux loops for high torque density generation. For maximized benefits and advanced motor features, the present invention takes full combined advantages of both SRM architecture and “Axial Flux” architecture by applying “Axial Flux” architecture into SRM design without using any permanent magnet, by modularizing and stacking the “Axial Flux” SRM design for easy configuration and customization to satisfy various drive torque requirements and broad applications, and by incorporating an en energy recovery transformer for minimizing switching circuitry thus further lowering the cost and further increasing the reliability and robustness. Unlike prior arts, the present invention does not use any permanent magnet and this “Axial Flux” SRM system is modularized and stackable with many benefits.

    Abstract translation: 本发明是一种具有并联激励的低磁阻圆周磁通回路的多单元模块化可堆叠开关磁阻电动机系统的装置，用于高扭矩密度产生。 为了实现最大化的优点和先进的电机特性，本发明通过在不使用任何永磁体的情况下将“轴向通量”结构应用于SRM设计，通过模块化和堆叠“轴向通量”来充分利用SRM架构和“轴向通量” SRM设计易于配置和定制，以满足各种驱动扭矩要求和广泛的应用，并通过结合能量回收变压器来最小化开关电路，从而进一步降低成本，进一步提高可靠性和鲁棒性。 不同于现有技术，本发明不使用任何永磁体，并且这种“轴向通量”SRM系统具有许多优点的模块化和堆叠。

    Layered electro-organic devices with crosslinked polymer and methods of preparing the same
    2.
    发明授权
    Layered electro-organic devices with crosslinked polymer and methods of preparing the same 有权
    具有交联聚合物的分层电 - 有机器件及其制备方法

    公开(公告)号：US08003980B2

    公开(公告)日：2011-08-23

    申请号：US11700447

    申请日：2007-01-30

    Applicant: Xia Sheng ,  Zhang-Lin Zhou ,  Krzysztof Nauka ,  Chung Ching Yang

    Inventor： Xia Sheng ,  Zhang-Lin Zhou ,  Krzysztof Nauka ,  Chung Ching Yang

    IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC classification number: H01L51/0043 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/56 ,  H01L2251/308 ,  Y02E10/549 ,  Y10T428/2495

    Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

    Abstract translation: 本发明涉及层状有机器件及其形成方法。 该方法包括将第一含溶剂的有机层施加到基底上并从第一含溶剂的有机层除去溶剂以形成第一固化有机层的步骤。 附加步骤包括将第二含溶剂的有机层施加到第一固化有机层并从第二含溶剂的有机层除去溶剂以形成第二固化的有机层。 当第一固化有机层的溶剂沉积在第一固化有机层上时，第一固化有机层可以交联，这抑制了对第一固化有机层中的组分的负面影响。

    Assembly for material deposition
    3.
    发明授权
    Assembly for material deposition 有权
    装配材料沉积

    公开(公告)号：US07185973B2

    公开(公告)日：2007-03-06

    申请号：US10954263

    申请日：2004-10-01

    Applicant: Gary A. Gibson ,  Krzysztof Nauka ,  Chung Ching Yang

    Inventor： Gary A. Gibson ,  Krzysztof Nauka ,  Chung Ching Yang

    IPC: B41J2/09 ,  B41J2/02

    CPC classification number: B41J2/02 ,  B41J2/09 ,  H05K3/1241

    Abstract: An assembly for depositing material onto a substrate includes a reservoir containing the material. The reservoir also includes a nozzle through which the material is jetted and formed into droplets. The droplets travel through flight paths prior to deposition onto the substrate. The assembly includes a charging ring for inducing an electrical charge to one or more of the droplets and a plurality of deflection plates for controlling the flight paths of the droplets. In addition, the assembly also includes a droplet manipulating device configured to manipulate the droplets at least one of during the flight paths and after deposition of the droplets onto the substrate.

    Abstract translation: 用于在衬底上沉积材料的组件包括容纳该材料的容器。 储存器还包括喷嘴，材料通过喷嘴喷射并形成液滴。 在沉积到基板上之前，液滴通过飞行路径行进。 该组件包括用于对一个或多个液滴引起电荷的充电环和用于控制液滴的飞行路径的多个偏转板。 另外，组件还包括液滴操纵装置，其被构造成在飞行路径期间和在将液滴沉积到基板上之后至少一个操纵液滴。

    Substrate bonding using a selenidation reaction
    7.
    发明授权
    Substrate bonding using a selenidation reaction 失效

    公开(公告)号：US06537846B2

    公开(公告)日：2003-03-25

    申请号：US09823550

    申请日：2001-03-30

    Applicant: Heon Lee ,  Chung Ching Yang

    Inventor： Heon Lee ,  Chung Ching Yang

    IPC: H01L2106

    CPC classification number: H01L21/2007 ,  H01L21/76251

    Abstract: A selenidation reaction for bonding one or more active substrates to a base substrate is disclosed. A bonded-substrate is fabricated by forming a first multi-stacked layer of selenium and indium on a bonding surface of an active substrate and forming a second multi-stacked layer of selenium and indium on a mounting surface of a base substrate. The first and second multi-stacked layers are placed into contact with each other with substantially no pressure. Then the active substrate and the base substrate are bonded to each other by annealing them in an inert ambient to form an indium-selenium compound bond layer that adhesively bonds the substrates to each other. The annealing can occur at a lower temperature than prior wafer-bonding processes and the first and second multi-stacked layers can be deposited over a wide range of relatively low temperatures including room temperature. Additionally, tellurium can be added to the selenium of either one or both of the first and second multi-stacked layers to reduce the annealing temperature and to form an indium-selenium-tellurium compound bond layer that adhesively bonds the substrates to each other. Elemental compounds or amorphous compounds can be used for the materials of the first and second multi-stacked layers to form a polycrystalline or amorphous compound bond layer respectively. One advantage of the compound bond layer is that it can be dissolved using a selective wet etching material so that the active substrate and the base substrate can be non-destructively detached from each other.

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