公开(公告)号：US08126694B2

公开(公告)日：2012-02-28

申请号：US12114700

申请日：2008-05-02

申请人： Zhuan Liu ,  Jiangtao Hu ,  Yudong Hao

发明人： Zhuan Liu ,  Jiangtao Hu ,  Yudong Hao

IPC分类号： G06F17/50 ,  G06F17/00 ,  G06G7/62

CPC分类号： G01N21/211 ,  G01B11/0641

摘要： A model of a sample with a periodic or non-periodic pattern of conductive and transparent materials is produced based on the effect that the pattern has on TE polarized incident light. The model of the pattern may include a uniform film of the transparent material and an underlying uniform film of the conductive material. When the pattern has periodicity in two directions, the model may include a uniform film of the transparent material and an underlying portion that based on the physical characteristics of the periodic pattern in the TM polarization direction. When the sample includes an underlying periodic pattern that is orthogonal to the top periodic pattern, the sample may be modeled by modeling the physical characteristics of the top periodic pattern and the effect of the bottom periodic pattern. The model may be stored and used to determine a characteristic of the sample.

摘要翻译： 基于图案对TE偏振入射光的影响，产生具有导电和透明材料的周期性或非周期性图案的样品的模型。 图案的模型可以包括透明材料的均匀膜和导电材料的下面的均匀膜。 当图案在两个方向上具有周期性时，该模型可以包括透明材料的均匀膜和基于TM偏振方向上的周期性图案的物理特性的底层部分。 当样本包括与顶部周期性图案正交的下面的周期性图案时，可以通过对顶部周期性图案的物理特性和底部周期性图案的影响进行建模来对样本进行建模。 该模型可以被存储并用于确定样品的特性。

公开(公告)号：US20090276198A1

公开(公告)日：2009-11-05

申请号：US12114700

申请日：2008-05-02

申请人： Zhuan Liu ,  Jiangtao Hu ,  Yudong Hao

发明人： Zhuan Liu ,  Jiangtao Hu ,  Yudong Hao

IPC分类号： G06F17/00 ,  G06G7/48

CPC分类号： G01N21/211 ,  G01B11/0641

摘要： A model of a sample with a periodic or non-periodic pattern of conductive and transparent materials is produced based on the effect that the pattern has on TE polarized incident light. The model of the pattern may include a uniform film of the transparent material and an underlying uniform film of the conductive material. When the pattern has periodicity in two directions, the model may include a uniform film of the transparent material and an underlying portion that based on the physical characteristics of the periodic pattern in the TM polarization direction. When the sample includes an underlying periodic pattern that is orthogonal to the top periodic pattern, the sample may be modeled by modeling the physical characteristics of the top periodic pattern and the effect of the bottom periodic pattern. The model may be stored and used to determine a characteristic of the sample.

摘要翻译： 基于图案对TE偏振入射光的影响，产生具有导电和透明材料的周期性或非周期性图案的样品的模型。 图案的模型可以包括透明材料的均匀膜和导电材料的下面的均匀膜。 当图案在两个方向上具有周期性时，该模型可以包括透明材料的均匀膜和基于TM偏振方向上的周期性图案的物理特性的底层部分。 当样本包括与顶部周期性图案正交的下面的周期性图案时，可以通过对顶部周期性图案的物理特性和底部周期性图案的影响进行建模来对样本进行建模。 该模型可以被存储并用于确定样品的特性。

公开(公告)号：US20170011127A1

公开(公告)日：2017-01-12

申请号：US14794688

申请日：2015-07-08

申请人： Jiangtao Hu ,  Guang Yang ,  Jingao Wang

发明人： Jiangtao Hu ,  Guang Yang ,  Jingao Wang

IPC分类号： G06F17/30

CPC分类号： G06F17/30867

摘要： In response to a first request for query received from a user device over a network, a search identifier (ID) identifying a search transaction is generated. A search engine performs a search within a content database based on one or more keywords, generating a set of content items. For at least one of the content items, an encoder encodes the search ID and a content ID identifying the content item into a machine-readable code and attaches the machine-readable code to the content item. A search result page is generated by incorporating the set of content items, where at least one of the content items in the search result includes a machine-readable code having the search ID and its content ID encoded therein. The search result page is transmitted to the user device over the network.

摘要翻译： 响应于通过网络从用户设备接收到的查询的第一请求，生成标识搜索事务的搜索标识符（ID）。 搜索引擎基于一个或多个关键字在内容数据库内执行搜索，生成一组内容项。 对于至少一个内容项，编码器将识别内容项的搜索ID和内容ID编码为机器可读代码，并将机器可读代码附加到内容项。 搜索结果页面通过合并内容项集合来生成，其中搜索结果中的至少一个内容项包括其中编码了搜索ID和其内容ID的机器可读代码。 搜索结果页面通过网络传输到用户设备。

公开(公告)号：US20090296075A1

公开(公告)日：2009-12-03

申请号：US12129448

申请日：2008-05-29

申请人： Jiangtao Hu ,  Chandra Saru Saravanan ,  Silvio J. Rabello ,  Zhuan Liu ,  Nigel P. Smith

发明人： Jiangtao Hu ,  Chandra Saru Saravanan ,  Silvio J. Rabello ,  Zhuan Liu ,  Nigel P. Smith

IPC分类号： G01N21/00

CPC分类号： G03F7/70633

摘要： An overlay error is determined using a diffraction based overlay target by generating a number of narrow band illumination beams that illuminate the overlay target. Each beam has a different range of wavelengths. Images of the overlay target are produced for each different range of wavelengths. An intensity value is then determined for each range of wavelengths. In an embodiment in which the overlay target includes a plurality of measurement pads, which may be illuminated and imaged simultaneously, an intensity value for each measurement pad in each image is determined. The intensity value may be determined statistically, such as by summing, finding the mean or median of the intensity values of pixels in the image. Spectra is then constructed using the determined intensity value, e.g., for each measurement pad. Using the constructed spectra, the overlay error may then be determined.

摘要翻译： 通过产生照亮覆盖目标的许多窄带照明光束，使用基于衍射的覆盖目标确定覆盖误差。 每个波束具有不同的波长范围。 为每个不同的波长范围产生覆盖目标的图像。 然后确定每个波长范围的强度值。 在其中覆盖目标包括可以同时照明和成像的多个测量焊盘的实施例中，确定每个图像中每个测量焊盘的强度值。 可以统计地确定强度值，例如通过求和，找到图像中的像素的强度值的平均值或中值。 然后使用确定的强度值构建光谱，例如，对于每个测量垫。 使用构造的光谱，可以确定覆盖误差。

公开(公告)号：US07301623B1

公开(公告)日：2007-11-27

申请号：US10738190

申请日：2003-12-16

申请人： Jonathan M. Madsen ,  Jiangtao Hu ,  Christopher W. Blaufus

发明人： Jonathan M. Madsen ,  Jiangtao Hu ,  Christopher W. Blaufus

IPC分类号： G01N21/00 ,  A61N5/00

CPC分类号： H01L21/68742

摘要： A chuck that clamps a substrate to the top surface using, e.g., a vacuum, electrostatic force, or other appropriate means, includes a plurality of lift pins that can raise the substrate off the top surface of the chuck. The chuck may be used with a metrology device that measures the substrate using a first type of measurement, e.g., film thickness measurement, while the substrate is held flat, and measures the substrate using a second type of measurement, e.g., radius of curvature measurement, while the substrate is supported on the lift pins. The thickness and radius of curvature measurements may then be used to determine the stress on the substrate. The lift pins may include an aperture through which a vacuum is applied through the top surface of the lift pins to the bottom of the substrate to securely hold the substrate while moving.

摘要翻译： 使用例如真空，静电力或其他合适的方式将基板夹紧到顶表面的卡盘包括可以将基板从卡盘的顶表面上升起的多个提升销。 卡盘可以与测量装置一起使用，该测量装置使用第一类型的测量（例如膜厚度测量）来测量衬底，同时衬底保持平坦，并且使用第二类型的测量来测量衬底，例如曲率半径测量 而基板支撑在提升销上。 然后可以使用厚度和曲率半径测量来确定衬底上的应力。 提升销可以包括孔，通过该孔通过提升销的顶表面将真空施加到基板的底部，以在移动时牢固地保持基板。

公开(公告)号：US07362448B1

公开(公告)日：2008-04-22

申请号：US10937248

申请日：2004-09-08

申请人： Zhuan Liu ,  Sangbong Lee ,  Jiangtao Hu ,  Chandra Saravanan

发明人： Zhuan Liu ,  Sangbong Lee ,  Jiangtao Hu ,  Chandra Saravanan

IPC分类号： G01B11/02

CPC分类号： G01B11/0625 ,  G01N21/31 ,  G01N21/9501

摘要： A residue detection system collects at least one of the spectrum and image from a measurement region on a sample. Spectral analysis is performed on the collected spectrum to determine whether residue is present and if so the thickness of the residue. The spectral analysis uses a calibration metric that correlates a monitoring parameter to the thickness of the residue. The monitoring parameter is at least one of the reflectance value at one or more of the local minima and maxima in the spectrum, the shape of one or more of the local minima and maxima in the spectrum, and the difference in reflectance values between at least two of the local minima and maxima in the spectrum. In one embodiment, imaging analysis is performed on the collected image of the measurement region if no residue is detected by the spectral analysis.

摘要翻译： 残留物检测系统从样品的测量区域收集至少一个光谱和图像。 对收集的光谱进行光谱分析，以确定残留物是否存在，如果是残留物的厚度。 光谱分析使用将监测参数与残留物厚度相关联的校准度量。 监测参数是光谱中局部最小值和最大值中的一个或多个的反射率值中的至少一个，光谱中的局部最小值和最大值中的一个或多个的形状，以及至少 光谱中的两个局部最小值和最大值。 在一个实施例中，如果通过光谱分析检测不到残留物，则对测量区域的所收集的图像执行成像分析。

公开(公告)号：US20120329251A1

公开(公告)日：2012-12-27

申请号：US13490325

申请日：2012-06-06

申请人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Jiangtao Hu

发明人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Jiangtao Hu

IPC分类号： H01L21/20 ,  B82Y40/00

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.