公开(公告)号：US20120175263A1

公开(公告)日：2012-07-12

申请号：US13324890

申请日：2011-12-13

Applicant: Kousik GANESAN ,  Tighe SPURLIN ,  Jonathan D. REID ,  Shantinath GHONGADI ,  Andrew McKERROW ,  James E. DUNCAN

Inventor： Kousik GANESAN ,  Tighe SPURLIN ,  Jonathan D. REID ,  Shantinath GHONGADI ,  Andrew McKERROW ,  James E. DUNCAN

IPC: C25D5/00 ,  C25D21/12 ,  C25D21/04

CPC classification number: C25D3/38 ,  C25D5/003 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/04 ,  C25D21/14

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 100 parts per million or less of an accelerator. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is electroplated with the plating solution onto the wafer substrate in the plating cell. After electroplating the metal onto the wafer substrate, an oxidizing strength of the plating solution is increased.

Abstract translation: 描述了用具有低氧浓度的电镀液将金属电镀到工件上的方法，系统和装置。 在一个方面，一种方法包括降低电镀溶液的氧浓度。 电镀溶液包含约百万分之一百或更少的促进剂。 在降低电镀液的氧浓度后，将晶片基板与电镀液中的电镀液接触。 电镀液中电镀液的氧浓度约为百万分之一以下。 将金属与电镀液电镀在电镀槽中的晶片基板上。 在将金属电镀到晶片基板上之后，镀液的氧化强度提高。

公开(公告)号：US08172992B2

公开(公告)日：2012-05-08

申请号：US12633219

申请日：2009-12-08

Applicant: Vinay Prabhakar ,  Bryan L. Buckalew ,  Kousik Ganesan ,  Shantinath Ghongadi ,  Zhian He ,  Steven T. Mayer ,  Robert Rash ,  Jonathan D. Reid ,  Yuichi Takada ,  James R. Zibrida

Inventor： Vinay Prabhakar ,  Bryan L. Buckalew ,  Kousik Ganesan ,  Shantinath Ghongadi ,  Zhian He ,  Steven T. Mayer ,  Robert Rash ,  Jonathan D. Reid ,  Yuichi Takada ,  James R. Zibrida

IPC: C25B9/02

CPC classification number: C25D17/001 ,  C25D7/123

Abstract: Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.

Abstract translation: 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

公开(公告)号：US09028666B2

公开(公告)日：2015-05-12

申请号：US13460423

申请日：2012-04-30

Applicant: Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

Inventor： Manish Ranjan ,  Shantinath Ghongadi ,  Frederick Dean Wilmot ,  Douglas Hill ,  Bryan L. Buckalew

IPC: C25D5/00 ,  C25D17/00 ,  C25D7/12 ,  H01L21/288

CPC classification number: C25D21/12 ,  C25D5/00 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  G03F7/16 ,  G03F7/20 ,  H01L21/0206 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53228

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract translation: 本文描述的方法将晶片进入电解质，使得由于晶片和/或晶片保持器与电解质的初始冲击而引起的空气滞留减少，并且晶片以这样的方式移动，使得在浸渍期间保持电解质润湿波前 该晶片还使空气截留最小化。

公开(公告)号：US08540857B1

公开(公告)日：2013-09-24

申请号：US13571199

申请日：2012-08-09

Applicant: Steven Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

Inventor： Steven Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

IPC: C25B9/00 ,  C25D17/00 ,  C25D7/12

CPC classification number: C25D17/001 ,  C25D5/08 ,  C25D17/002 ,  C25D17/008

Abstract: An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.

Abstract translation: 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。

公开(公告)号：US08377268B2

公开(公告)日：2013-02-19

申请号：US13154224

申请日：2011-06-06

Applicant: Robert Rash ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Tariq Majid ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Bryan Buckalew

Inventor： Robert Rash ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Tariq Majid ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Bryan Buckalew

IPC: C25D17/06 ,  C25D7/12

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/02

Abstract: Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.

Abstract translation: 公开了一种闭式电镀杯的实施例。 一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。 密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。 该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。 该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。

公开(公告)号：US09512538B2

公开(公告)日：2016-12-06

申请号：US13609037

申请日：2012-09-10

Applicant: Zhian He ,  Jingbin Feng ,  Shantinath Ghongadi ,  Frederick D. Wilmot

Inventor： Zhian He ,  Jingbin Feng ,  Shantinath Ghongadi ,  Frederick D. Wilmot

IPC: C25D17/00 ,  C25D17/06 ,  C25D17/12 ,  C25D7/12

CPC classification number: C25D17/06 ,  C25D7/12 ,  C25D17/001 ,  C25D17/004 ,  C25D17/005 ,  C25D17/007 ,  C25D17/12

Abstract: Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer.

Abstract translation: 这里公开了用于在电镀期间在蛤壳式组件中接合晶片并在电镀期间向晶片供应电流的杯子。 杯子可以包括设置在杯子上并被配置为在电镀期间接合晶片的弹性体密封件，其中在接合时，弹性体密封件基本上排除来自晶片的周边区域的电镀溶液，并且其中弹性体密封件和杯子是环形的 并且包括用于在电镀期间向晶片供应电流的一个或多个接触元件，所述一个或多个接触元件从设置在弹性体密封件上方的金属条附接到杯的中心并向内延伸。 杯的切口区域可以在杯的底表面的一部分上具有突起或绝缘部分，其中凹口区域与晶片中的凹口对准。

公开(公告)号：US09028657B2

公开(公告)日：2015-05-12

申请号：US12879484

申请日：2010-09-10

Applicant: Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25B9/02 ,  C25D17/00 ,  C25D17/10 ,  C25D7/12 ,  C25D17/06

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract translation: 描述了用于电镀的设备和方法。 本文描述的装置包括阳极支撑件，其包括定位机构，其在电镀期间保持晶片表面和可消耗阳极表面之间的一致的距离。 实现更均匀性的控制。

公开(公告)号：US20130284604A1

公开(公告)日：2013-10-31

申请号：US13869891

申请日：2013-04-24

Applicant: Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

Inventor： Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

IPC: C25D21/14 ,  C25D17/00 ,  C25D3/38

CPC classification number: C25D21/14 ,  C25D3/38 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/18

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract translation: 公开了将金属电镀到基底上的装置和方法。 电镀装置包括电镀电池和至少一个氧化装置。 电镀电池包括阴极室和阳极室，隔室由金属阳离子通过但防止有机颗粒穿过。 氧化装置（ODD）被配置为将要电镀的金属的阳离子氧化到基底上，该阳离子在电镀期间存在于阳极电解液中。 在一些实施方案中，ODD被实施为碳阳极，其通过电化学方法从阳极电解液中除去Cu（I）。 在其他实施方案中，ODD被实施为氧化装置（OGD）或外加电流阴极保护阳极（ICCP阳极），这两者都增加了阳极电解液溶液中的氧浓度。 还公开了高效电镀的方法。

公开(公告)号：US20130062197A1

公开(公告)日：2013-03-14

申请号：US13609037

申请日：2012-09-10

Applicant: Zhian He ,  Jingbin Feng ,  Shantinath Ghongadi ,  Frederick D. Wilmot

Inventor： Zhian He ,  Jingbin Feng ,  Shantinath Ghongadi ,  Frederick D. Wilmot

IPC: C25D17/06

CPC classification number: C25D17/06 ,  C25D7/12 ,  C25D17/001 ,  C25D17/004 ,  C25D17/005 ,  C25D17/007 ,  C25D17/12

Abstract: Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer.

公开(公告)号：US07935231B2

公开(公告)日：2011-05-03

申请号：US11932595

申请日：2007-10-31

Applicant: Shantinath Ghongadi ,  Robert Rash ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Tariq Majid ,  Kousik Ganesan ,  Bryan Buckalew ,  Brian Evans

Inventor： Shantinath Ghongadi ,  Robert Rash ,  Jeff Hawkins ,  Seshasayee Varadarajan ,  Tariq Majid ,  Kousik Ganesan ,  Bryan Buckalew ,  Brian Evans

IPC: C25B9/02 ,  C25D17/06

CPC classification number: C25D17/001 ,  C25D17/004 ,  C25D17/005 ,  C25D21/08

Abstract: Embodiments of a closed-contact electroplating cup assembly that may be rapidly cleaned while an electroplating system is on-line are disclosed. One disclosed embodiment comprises a cup assembly and a cone assembly, wherein the cup assembly comprises a cup bottom comprising an opening, a seal surrounding the opening, an electrical contact structure comprising a plurality of electrical contacts disposed around the opening, and an interior cup side that is tapered inwardly in along an axial direction of the cup from a cup top toward the cup bottom.

Abstract translation: 公开了一种在电镀系统在线时能够快速清洁的闭式电镀杯组件的实施例。 一个公开的实施例包括杯组件和锥形组件，其中杯组件包括杯底，其包括开口，围绕开口的密封件，包括围绕开口设置的多个电触点的电接触结构，以及内杯侧 其沿着杯的轴向方向从杯形顶部向杯底部向内渐缩。