Integrated circuit package and method for fabrication thereof
    2.
    发明授权
    Integrated circuit package and method for fabrication thereof 有权
    集成电路封装及其制造方法

    公开(公告)号:US08624383B2

    公开(公告)日:2014-01-07

    申请号:US12836477

    申请日:2010-07-14

    IPC分类号: H01L23/12

    摘要: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.

    摘要翻译: 本发明提供一种集成电路封装及其制造方法。 集成电路封装包括其上具有光敏器件的集成电路芯片; 焊盘,形成在集成电路芯片的上表面上并电连接到感光器件; 在焊盘和感光装置之间形成的屏障; 以及形成在集成电路芯片的侧壁上并电连接到接合焊盘的导电层。 阻挡层阻止粘合剂层溢出到形成有感光装置的区域中,以提高制造集成电路封装的成品率。

    Chip package and method for fabricating the same
    3.
    发明授权
    Chip package and method for fabricating the same 有权
    芯片封装及其制造方法

    公开(公告)号:US08575634B2

    公开(公告)日:2013-11-05

    申请号:US12981600

    申请日:2010-12-30

    IPC分类号: H01L33/60 H01L33/48

    摘要: The present invention provides a chip package, including: a chip having a semiconductor device thereon; a cap layer over the semiconductor device; a spacer layer between the chip and the cap layer, wherein the spacer layer surrounds the semiconductor device and forms a cavity between the chip and the cap layer; and an anti-reflective layer between the cap layer and the chip, wherein the anti-reflective layer has a overlapping region with the spacer layer and extends into the cavity. Furthermore, a method for fabricating a chip package is also provided.

    摘要翻译: 本发明提供了一种芯片封装,包括:其上具有半导体器件的芯片; 半导体器件上的覆盖层; 在所述芯片和所述盖层之间的间隔层,其中所述间隔层围绕所述半导体器件并且在所述芯片和所述盖层之间形成空腔; 以及在所述盖层和所述芯片之间的抗反射层,其中所述抗反射层具有与所述间隔层的重叠区域并延伸到所述空腔中。 此外,还提供了一种用于制造芯片封装的方法。

    Integrated cirucit package and method for fabrication thereof
    5.
    发明授权
    Integrated cirucit package and method for fabrication thereof 有权
    集成cirucit封装及其制造方法

    公开(公告)号:US08003442B2

    公开(公告)日:2011-08-23

    申请号:US11878568

    申请日:2007-07-25

    IPC分类号: H01L21/00

    摘要: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.

    摘要翻译: 本发明提供一种集成电路封装及其制造方法。 集成电路封装包括其上具有光敏器件的集成电路芯片; 焊盘,形成在集成电路芯片的上表面上并电连接到感光器件; 在焊盘和感光装置之间形成的屏障; 以及形成在集成电路芯片的侧壁上并电连接到接合焊盘的导电层。 阻挡层阻止粘合剂层溢出到形成有感光装置的区域中,以提高制造集成电路封装的成品率。

    Methods of forming planarized multilevel metallization in an integrated circuit
    9.
    发明申请
    Methods of forming planarized multilevel metallization in an integrated circuit 有权
    在集成电路中形成平面化多层金属化的方法

    公开(公告)号:US20060094232A1

    公开(公告)日:2006-05-04

    申请号:US10976539

    申请日:2004-10-29

    IPC分类号: H01L21/4763

    摘要: A method is provided for forming a semiconductor device that reduces metal-stress-induced photo misalignment by incorporating a multi-layered anti-reflective coating over a metal layer. The method includes providing a substrate with a conductive layer formed over the substrate, depositing a multi-layered anti-reflective coating (including alternating layers of titanium and titanium nitride), defining a plurality of conductive lines in connection with a first etching step, depositing a dielectric layer, and defining at least one via in connection with a second etching step.

    摘要翻译: 提供了一种形成半导体器件的方法,该半导体器件通过在金属层上并入多层抗反射涂层来减少金属应力诱导的光失准。 该方法包括:在衬底上形成导电层的衬底,沉积多层抗反射涂层(包括钛和氮化钛的交替层),与第一蚀刻步骤相结合形成多条导电线,沉积 介电层,并且与第二蚀刻步骤相关地限定至少一个通孔。