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公开(公告)号：US12044981B2
公开(公告)日：2024-07-23
申请号：US17381817
申请日：2021-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
CPC classification number: G03F7/70633 , G03F7/70525 , G03F7/7085 , G03F9/7003
Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
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公开(公告)号：US10990018B2
公开(公告)日：2021-04-27
申请号：US16481143
申请日：2018-02-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US10691863B2
公开(公告)日：2020-06-23
申请号：US15769539
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Everhardus Cornelis Mos , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier , Erik Jensen
IPC: G06F30/398 , G03F1/70 , G03F1/72 , G06F111/10
Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
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公开(公告)号：US09971478B2
公开(公告)日：2018-05-15
申请号：US15093523
申请日：2016-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Everhardus Cornelis Mos , Erik Mathijs Maria Crombag , Ajith Ganesan
IPC: G03B27/42 , G06F3/0482 , G03F7/20
CPC classification number: G06F3/0482 , G03F7/70508 , G03F7/70616
Abstract: A method of displaying a plurality of graphical user interface elements, each graphical user interface element representing a step in a measurement design, setup and/or monitoring process and each graphical user interface element enabling access by the user to further steps in the measurement design, setup and/or monitoring process for the associated step of the graphical user interface element, and displaying an indicator associated with one or more of the plurality of graphical user elements, the indicator indicating that a step in the measurement design, setup and/or monitoring process is not completed and/or that a key performance indicator associated with a step in the measurement design, setup and/or monitoring process has passed a threshold.
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公开(公告)号：US09811006B2
公开(公告)日：2017-11-07
申请号：US15111763
申请日：2014-11-04
Applicant: ASML Netherlands B.V.
Inventor： Jochem Sebastiaan Wildenberg , Everhardus Cornelis Mos
CPC classification number: G03F7/70775 , G01B11/272 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7003 , G03F9/7046
Abstract: A method of determining a measurement subset of metrology point locations which includes a subset of potential metrology point locations on a substrate. The method including identifying a plurality of candidate metrology point locations from the potential metrology point locations. A change in the level of informativity imparted by the measurement subset of metrology point locations which is attributable to the inclusion of that candidate metrology point location into the measurement subset of metrology point locations is evaluated for each of the candidate metrology point locations. The candidate metrology point locations which have the greatest increase in the level of informativity attributed thereto are selected for inclusion into the measurement subset of metrology point locations.
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Patent Agency Ranking
公开(公告)号：US20140354969A1
公开(公告)日：2014-12-04
申请号：US14355962
申请日：2012-11-22
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Li Chung-Hsun
IPC: G01N21/95 , H01J37/317 , G01N23/20
CPC classification number: G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/9501 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/20 , Y02P90/22
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.
Abstract translation: 在测量晶片衬底的特性（例如临界尺寸或覆盖层）时，产生用于测量衬底性质的采样计划（2506），其中采样计划包括多个次采样图。 采样计划可以被约束到预定的固定数量的测量点，并且被使用（2508）来控制检查装置，以使用对于各个基板的不同的子采样计划来执行多个基板的属性的多个测量 ，结果（2510）根据样本计划至少部分地重新组合测量结果。
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公开(公告)号：US11067902B2
公开(公告)日：2021-07-20
申请号：US16635584
申请日：2018-07-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick Warnaar , Patricius Aloysius Jacobus Tinnemans , Grzegorz Grzela , Everhardus Cornelis Mos , Wim Tjibbo Tel , Marinus Jochemsen , Bart Peter Bert Segers , Frank Staals
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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公开(公告)号：US11036146B2
公开(公告)日：2021-06-15
申请号：US15769339
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Peter Ten Berge , Peter Hanzen Wardenier , Erik Jensen , Hakki Ergün Cekli
Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.
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公开(公告)号：US10816904B2
公开(公告)日：2020-10-27
申请号：US16461044
申请日：2018-05-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Davit Harutyunyan , Fei Jia , Frank Staals , Fuming Wang , Hugo Thomas Looijestijn , Cornelis Johannes Rijnierse , Maxim Pisarenco , Roy Werkman , Thomas Theeuwes , Tom Van Hemert , Vahid Bastani , Jochem Sebastiaan Wildenberg , Everhardus Cornelis Mos , Erik Johannes Maria Wallerbos
Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.
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公开(公告)号：US10809631B2
公开(公告)日：2020-10-20
申请号：US15951343
申请日：2018-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Everhardus Cornelis Mos , Jochem Sebastiaan Wildenberg , Marcel Hendrikus Maria Beems , Erik Johannes Maria Wallerbos
IPC: G03F7/20
Abstract: A method of monitoring a device manufacturing process, the method including; obtaining an estimated time variation of a process parameter; determining, on the basis of the estimated time variation, a sampling plan for measurements to be performed on a plurality of substrates to obtain information about the process parameter; measuring substrates in accordance with the sampling plan to obtain a plurality of measurements; and determining an actual time variation of the process parameter on the basis of the measurements.
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