公开(公告)号：US20170264071A1

公开(公告)日：2017-09-14

申请号：US15600149

申请日：2017-05-19

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich NIKIPELOV ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Gosse Charles De Vries ,  Olav Waldemar Vladimir Frijns ,  Leonardus Adrianus Gerardus Grimminck ,  Andelko Katalenic ,  Johannes Antonius Gerardus Akkermans ,  Erik Loopstra ,  Wouter Joep Engelen ,  Petrus Rutgerus Bartraij ,  Teis Johan Coenen ,  Wilhelmus Patrick Elisabeth Maria Op 'T Root

IPC: H01S3/09 ,  H01J1/34 ,  H05H7/08

CPC classification number: H01S3/0903 ,  H01J1/34 ,  H05H7/08 ,  H05H2007/084

Abstract: A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

公开(公告)号：US10103508B2

公开(公告)日：2018-10-16

申请号：US15600149

申请日：2017-05-19

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Gosse Charles De Vries ,  Olav Waldemar Vladimir Frijns ,  Leonardus Adrianus Gerardus Grimminck ,  Andelko Katalenic ,  Johannes Antonius Gerardus Akkermans ,  Erik Loopstra ,  Wouter Joep Engelen ,  Petrus Rutgerus Bartraij ,  Teis Johan Coenen ,  Wilhelmus Patrick Elisabeth Maria Op 'T Root

IPC: H01S3/09 ,  H01J1/34 ,  H05H7/08

Abstract: A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

公开(公告)号：US09823572B2

公开(公告)日：2017-11-21

申请号：US14900110

申请日：2014-06-17

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Olav Waldemar Vladimir Frijns ,  Gosse Charles De Vries ,  Erik Roelof Loopstra ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Rilpho Ludovicus Donker ,  Han-Kwang Nienhuys ,  Borgert Kruizinga ,  Wouter Joep Engelen ,  Otger Jan Luiten ,  Johannes Antonius Gerardus Akkermans ,  Leonardus Adrianus Gerardus Grimminck ,  Vladimir Litvinenko

IPC: G03B27/42 ,  G03B27/58 ,  G03F7/20 ,  H01S3/09 ,  G01J1/04 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  G02B26/02 ,  G01J1/26 ,  G01J1/42 ,  H05H7/04 ,  H01S3/00

CPC classification number: G03F7/70033 ,  G01J1/0407 ,  G01J1/0418 ,  G01J1/26 ,  G01J1/429 ,  G02B1/06 ,  G02B5/205 ,  G02B26/023 ,  G03F7/70008 ,  G03F7/7055 ,  G03F7/70558 ,  G03F7/7085 ,  G21K1/10 ,  H01S3/005 ,  H01S3/0085 ,  H01S3/0903 ,  H05H7/04

Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

公开(公告)号：US11960215B2

公开(公告)日：2024-04-16

申请号：US17282871

申请日：2019-09-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Vahid Mohammadi ,  Yassin Chowdhury ,  Pieter Cristiaan De Groot ,  Wouter Joep Engelen ,  Marcel Johannes Petrus Theodorus Van Der Hoorn

IPC: H01L31/18 ,  G03F7/00 ,  H01L31/02 ,  H01L31/0216

CPC classification number: G03F7/7085 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/02164 ,  H01L31/1868

Abstract: A radiation filter for reducing transmission of an unwanted wavelength of radiation. The radiation filter includes zirconium and SiN3. The radiation filter may form part of a radiation sensor including a passivation layer arranged to receive radiation transmitted by the radiation filter, a photodiode arranged to receive radiation transmitted by the passivation layer, and circuit elements connected to the photodiode. The radiation sensor may perform optical measurements as part of an extreme ultraviolet lithographic apparatus or a lithographic tool.

公开(公告)号：US10732498B2

公开(公告)日：2020-08-04

申请号：US16502674

申请日：2019-07-03

Applicant: ASML Netherlands B.V.

Inventor： Pieter Cristiaan De Groot ,  Gerard Frans Jozef Schasfoort ,  Maksym Yuriiovych Sladkov ,  Manfred Petrus Johannes Maria Dikkers ,  Jozef Maria Finders ,  Pieter-Jan Van Zwol ,  Johannes Jacobus Matheus Baselmans ,  Stefan Michael Bruno Baumer ,  Laurentius Cornelius De Winter ,  Wouter Joep Engelen ,  Marcus Adrianus Van De Kerkhof ,  Robbert Jan Voogd

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/44 ,  G02B5/02 ,  G03F7/20 ,  G03F9/00 ,  G02B5/22 ,  G02B5/18

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

公开(公告)号：US09853412B2

公开(公告)日：2017-12-26

申请号：US15502462

申请日：2015-07-27

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Teis Johan Coenen ,  Wouter Joep Engelen ,  Gerrit Jacobus Hendrik Brussaard ,  Gijsbertus Geert Poorter ,  Erik Roelof Loopstra

IPC: H01S3/00 ,  H01S3/09 ,  H01S3/0959 ,  H01S3/11 ,  H01S3/102

CPC classification number: H01S3/0903 ,  H01S3/0071 ,  H01S3/0959 ,  H01S3/1024 ,  H01S3/11 ,  H01S3/1103

Abstract: Passage through LINACs of electron bunches in their acceleration phase is coordinated with passage through the LINACs of electron bunches in their deceleration phase. Each successive pair of electron bunches are spaced in time by a respective bunch spacing, in accordance with a repeating electron bunch sequence. The electron source provides clearing gaps in the electron bunch sequence to allow clearing of ions at the undulator. The electron source provides the clearing gaps in accordance with a clearing gap sequence such that, for each of the plurality of energy recovery LINACS, and for substantially all of the clearing gaps: for each passage of the clearing gap through the LINAC in an acceleration phase or deceleration phase the clearing gap is coordinated with a further one of the clearing gaps passing through the LINAC in a deceleration phase or acceleration phase thereby to maintain energy recovery operation of the LINAC.

公开(公告)号：US10884339B2

公开(公告)日：2021-01-05

申请号：US16435630

申请日：2019-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wouter Joep Engelen ,  Otger Jan Luiten ,  Andrey Alexandrovich Nikipelov ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Erik Roelof Loopstra

IPC: G03B27/42 ,  H01J31/48 ,  G03F7/20 ,  G01J1/04 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  G02B26/02 ,  G01J1/26 ,  G01J1/42 ,  H01S3/09 ,  H05H7/04 ,  H01S3/00

Abstract: A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

公开(公告)号：US10468225B2

公开(公告)日：2019-11-05

申请号：US16072385

申请日：2017-02-07

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Gerrit Jacobus Hendrik Brussaard ,  Wouter Joep Engelen

IPC: H01J37/073 ,  H01S3/09 ,  H05H7/08

Abstract: An electron source, e.g. for a free electron laser used for EUV lithography comprises: • a cathode (203) configured to be connected to a negative potential (100, 101); • a laser (110) configured to direct pulses of radiation onto the cathode so as to cause the cathode to emit bunches of electrons; • an RF booster (180) connected to an RF source and configured to accelerate the bunches of electrons; and • a timing corrector (303, 313, 400, 401) configured to correct the time of arrival of bunches of electrons at the RF booster relative to the RF voltage provided by the RF source. The timing corrector may comprise a correction electrode (303, 313) surrounding a path of the bunches of electrons from the cathode to the RF booster and a correction voltage source (400, 401) configured to apply a correction voltage to the correction electrode.

公开(公告)号：US10401723B2

公开(公告)日：2019-09-03

申请号：US16300370

申请日：2017-05-30

Applicant: ASML Netherlands B.V.

Inventor： Pieter Cristiaan De Groot ,  Gerard Frans Jozef Schasfoort ,  Maksym Yuriiovych Sladkov ,  Manfred Petrus Johannes Maria Dikkers ,  Jozef Maria Finders ,  Pieter-Jan Van Zwol ,  Johannes Jacobus Matheus Baselmans ,  Stefan Michael Bruno Baumer ,  Laurentius Cornelius De Winter ,  Wouter Joep Engelen ,  Marcus Adrianus Van De Kerkhof ,  Robbert Jan Voogd

IPC: G02B5/02 ,  G03F7/20 ,  G03F1/24 ,  G03F1/42 ,  G03F1/44 ,  G03F9/00 ,  G02B5/22 ,  G02B5/18

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

公开(公告)号：US12271008B2

公开(公告)日：2025-04-08

申请号：US17282559

申请日：2019-09-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Andrey Nikipelov ,  Marcus Adrianus Van De Kerkhof ,  Pieter-Jan Van Zwol ,  Laurentius Cornelius De Winter ,  Wouter Joep Engelen ,  Alexey Olegovich Polyakov

IPC: G02B5/02 ,  G03F7/00 ,  B82Y40/00

Abstract: A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.