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    Storage capacitor, array of storage capacitors and memory cell array
    1.
    发明申请
    Storage capacitor, array of storage capacitors and memory cell array 审中-公开
    存储电容器，存储电容器阵列和存储单元阵列

    公开(公告)号：US20060202250A1

    公开(公告)日：2006-09-14

    申请号：US11076021

    申请日：2005-03-10

    申请人： Thomas Hecht ,  Uwe Schroeder ,  Till Schloesser ,  Stefan Jakschik ,  Alejandro Avellan

    发明人： Thomas Hecht ,  Uwe Schroeder ,  Till Schloesser ,  Stefan Jakschik ,  Alejandro Avellan

    IPC分类号： H01L29/94

    CPC分类号： H01L27/10852 ,  H01L27/0207 ,  H01L28/82

    摘要： A storage capacitor, suitable for use in a DRAM cell, is at least partially formed above a substrate surface and includes: a storage electrode at least partially formed above the substrate surface, a dielectric layer formed adjacent the storage electrode, and a counter electrode formed adjacent the dielectric layer, the counter electrode being isolated from the storage electrode by the dielectric layer, wherein the storage electrode is formed as a body which is delimited by at least one curved surface having a center of curvature outside the body in a plane parallel to the substrate surface. According to another configuration, the storage electrode is formed as a body which is delimited by at least one set having two contiguous planes, the two planes extending perpendicularly with respect to the substrate surface, a point of intersection of normals of the two planes lying outside the body.

    摘要翻译： 适用于DRAM单元的存储电容器至少部分地形成在衬底表面之上，并且包括：至少部分地形成在衬底表面上方的存储电极，与存储电极相邻形成的电介质层和形成的对电极 所述对置电极通过所述电介质层与所述存储电极隔离，其中所述存储电极形成为主体，所述主体由平行于所述电介质层的平面中的具有在所述主体外部的曲率中心的至少一个曲面限定 基材表面。 根据另一种结构，存储电极形成为由具有两个相邻平面的至少一组限定的主体，两个平面相对于基板表面垂直延伸，两个平面的法线相交点位于外部 身体。

    Method for fabricating an electrical component
    2.
    发明申请
    Method for fabricating an electrical component 有权
    电气部件的制造方法

    公开(公告)号：US20060234463A1

    公开(公告)日：2006-10-19

    申请号：US11399811

    申请日：2006-04-07

    申请人： Alejandro Avellan ,  Thomas Hecht ,  Stefan Jakschik ,  Uwe Schroeder

    发明人： Alejandro Avellan ,  Thomas Hecht ,  Stefan Jakschik ,  Uwe Schroeder

    IPC分类号： H01L21/20 ,  H01L21/8242 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L28/65 ,  H01L27/1087 ,  H01L29/66181

    摘要： An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.

    摘要翻译： 制造诸如DRAM半导体存储器或场效应晶体管的电气部件。 制造具有电介质（130）和至少一个连接电极（120,140）的至少一个电容器。 为了使得制造的电容器即使对于非常小的电容器结构也具有最佳的存储特性，电介质（130）或连接电极（120,140）形成为使得瞬态极化效应被防止或至少减小。

    Method for fabricating an electrical component
    3.
    发明授权
    Method for fabricating an electrical component 有权
    电气部件的制造方法

    公开(公告)号：US07531406B2

    公开(公告)日：2009-05-12

    申请号：US11399811

    申请日：2006-04-07

    申请人： Alejandro Avellan ,  Thomas Hecht ,  Stefan Jakschik ,  Uwe Schroeder

    发明人： Alejandro Avellan ,  Thomas Hecht ,  Stefan Jakschik ,  Uwe Schroeder

    IPC分类号： H01L21/8234

    CPC分类号： H01L28/65 ,  H01L27/1087 ,  H01L29/66181

    摘要： An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.

    摘要翻译： 制造诸如DRAM半导体存储器或场效应晶体管的电气部件。 制造具有电介质（130）和至少一个连接电极（120,140）的至少一个电容器。 为了使得制造的电容器即使对于非常小的电容器结构也具有最佳的存储特性，电介质（130）或连接电极（120,140）形成为使得瞬态极化效应被防止或至少减小。

    Memory and method for fabricating it
    5.
    发明申请
    Memory and method for fabricating it 审中-公开
    记忆及其制作方法

    公开(公告)号：US20060275981A1

    公开(公告)日：2006-12-07

    申请号：US11442602

    申请日：2006-05-30

    申请人： Alejandro Avellan ,  Matthias Goldbach ,  Thomas Hecht ,  Stefan Jakschik ,  Andreas Orth ,  Uwe Schroder ,  Michael Stadtmueller ,  Olaf Storbeck

    发明人： Alejandro Avellan ,  Matthias Goldbach ,  Thomas Hecht ,  Stefan Jakschik ,  Andreas Orth ,  Uwe Schroder ,  Michael Stadtmueller ,  Olaf Storbeck

    IPC分类号： H01L21/8242 ,  H01L29/94

    CPC分类号： H01L29/66181 ,  H01L27/10829 ,  H01L27/10867

    摘要： Memory and method for fabricating it A memory formed as an integrated circuit in a semiconductor substrate and having storage capacitors and switching transistors. The storage capacitors are formed in the semiconductor substrate in a trench and have an outer electrode layer, which is formed around the trench, a dielectric intermediate layer, which is embodied on the trench wall, and an inner electrode layer, with which the trench is essentially filled, and the switching transistors are formed in the semiconductor substrate in a surface region and have a first source/drain doping region, a second source/drain doping region and an intervening channel, which is separated from a gate electrode by an insulator layer.

    摘要翻译： 存储器及其制造方法在半导体衬底中形成为集成电路并具有存储电容器和开关晶体管的存储器。 存储电容器形成在沟槽中的半导体衬底中，并且具有围绕沟槽形成的外部电极层，体现在沟槽壁上的电介质中间层和内部电极层，沟槽是 基本上填充，并且开关晶体管形成在表面区域中的半导体衬底中，并且具有第一源极/漏极掺杂区域，第二源极/漏极掺杂区域和中间沟道，其通过绝缘体层与栅电极分离 。

    SOLAR MODULE WITH REDUCED POWER LOSS AND PROCESS FOR THE PRODUCTION THEREOF
    9.
    发明申请
    SOLAR MODULE WITH REDUCED POWER LOSS AND PROCESS FOR THE PRODUCTION THEREOF 审中-公开
    具有减少功率损耗的太阳能模块及其生产过程

    公开(公告)号：US20140305492A1

    公开(公告)日：2014-10-16

    申请号：US14235960

    申请日：2012-08-01

    申请人： Arnaud Verger ,  Fabien Lienhart ,  Paul Mogensen ,  Walter Stetter ,  Alejandro Avellan

    发明人： Arnaud Verger ,  Fabien Lienhart ,  Paul Mogensen ,  Walter Stetter ,  Alejandro Avellan

    IPC分类号： H01L31/048 ,  H01L31/18

    CPC分类号： H01L31/048 ,  H01L31/022441 ,  H01L31/0481 ,  H01L31/0516 ,  H01L31/1876 ,  H01L31/188 ,  Y02E10/50

    摘要： A solar module is described. The solar module has a laminated composite of two substrates bonded to one another by at least one bonding layer, between which substrates there are solar cells which are connected in series and which each have an absorber zone made of a semiconducting material between a front electrode arranged on a light entrance side of the absorber zone and a rear electrode. A diffusion barrier differing from the front electrode is located between each absorber zone and the bonding layer and is designed to inhibit the diffusion of water molecules from the bonding layer into the absorber zone and/or the diffusion of dopant ions from the absorber zone into the bonding layer. A process for producing such a solar module is also described.

    摘要翻译： 描述太阳能模块。 太阳能模块具有通过至少一个结合层彼此接合的两个基板的叠层复合物，在该基板之间存在串联连接的太阳能电池，并且每个基板具有由半导体材料制成的吸收区域， 在吸收区的光入射侧和后电极上。 与前电极不同的扩散阻挡层位于每个吸收区和接合层之间，并且被设计成抑制水分子从结合层扩散到吸收区中和/或将掺杂剂离子从吸收区扩散到 粘结层。 还描述了用于生产这种太阳能模块的方法。