公开(公告)号：US20220107561A1

公开(公告)日：2022-04-07

申请号：US17548595

申请日：2021-12-13

Applicant: FUJIFILM Corporation

Inventor： Keiyu OU ,  Naohiro TANGO ,  Kei YAMAMOTO ,  Kazuhiro MARUMO

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  C07C381/12 ,  C07C311/51 ,  C07C311/09 ,  C07C309/17 ,  C07D333/46 ,  C07D327/06 ,  C07C309/42 ,  C07C311/48 ,  C07D333/76 ,  C07D327/08

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is a method for producing an actinic ray-sensitive or radiation-sensitive resin composition including at least a resin having a polarity that increases due to decomposition by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a solvent, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of a compound (I) to (III) below, and the actinic ray-sensitive or radiation-sensitive resin composition is produced by mixing a first solution including the resin having a polarity that increases by the action of an acid and a first solvent with the one or more compounds selected from the group consisting of the compound (I) to (III).

公开(公告)号：US20170322490A1

公开(公告)日：2017-11-09

申请号：US15657295

申请日：2017-07-24

Applicant: FUJIFILM Corporation

Inventor： Naoya HATAKEYAMA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Keita KATO ,  Keiyu OU

IPC: G03F7/075 ,  G03F7/004 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38 ,  G03F7/16

CPC classification number: G03F7/0758 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38

Abstract: A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

公开(公告)号：US20170199455A1

公开(公告)日：2017-07-13

申请号：US15470003

申请日：2017-03-27

Applicant: FUJIFILM Corporation

Inventor： Masafumi KOJIMA ,  Akiyoshi GOTO ,  Akinori SHIBUYA ,  Keita KATO ,  Keiyu OU

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/16 ,  H01L21/027 ,  G03F7/38 ,  G03F7/09 ,  G03F7/32 ,  G03F7/30 ,  C08F220/18 ,  G03F7/20

CPC classification number: G03F7/038 ,  C08F220/12 ,  C08F220/18 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/3021 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/0276

Abstract: The present invention has an object to provide a method for forming a negative tone pattern in which DOF of a resist composition used is high and shrinkage of a film in post exposure bake is suppressed; a method for manufacturing an electronic device including the pattern forming method; and an active-light-sensitive or radiation-sensitive resin composition. The method for forming a negative tone pattern of the present invention including: a film formation step of forming a resist film on a substrate, using a resist composition; an exposing step of irradiating the film with active light or radiation; a heating treatment step of performing a heating treatment on the film irradiated with active light or radiation; and a developing step of developing the heating-treated film using a developer including an organic solvent, in which the resist composition includes a resin A having a repeating unit A with a group represented by a specific formula, a resin B having a repeating unit B with a group represented by a specific formula, and a compound that generates an acid upon irradiation with active light or radiation.

公开(公告)号：US20160347897A1

公开(公告)日：2016-12-01

申请号：US15234489

申请日：2016-08-11

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Masafumi KOJIMA ,  Michihiro SHIRAKAWA ,  Keita KATO ,  Keiyu OU

IPC: C08F224/00 ,  G03F7/32 ,  G03F7/20 ,  C08F220/68 ,  G03F7/038

CPC classification number: G03F7/0397 ,  C08F22/10 ,  C08F220/68 ,  C08F224/00 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/2053 ,  G03F7/26 ,  G03F7/30 ,  G03F7/325

Abstract: The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group which decomposes by the action of an acid represented by the following General Formula (1), a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device.

Abstract translation: 本发明提供一种焦点宽度大的光化射线敏感性或辐射敏感性树脂组合物，即使形成微细图案，也抑制图案的塌陷。 图案形成方法，电子装置制造方法和使用该组合物的电子装置。 该光化射线敏感性或辐射敏感性树脂组合物含有包含具有通过通式（1）表示的酸的作用而分解的自由基的重复单元（i）的树脂（P）。

公开(公告)号：US20210088905A1

公开(公告)日：2021-03-25

申请号：US17106170

申请日：2020-11-29

Applicant: FUJIFILM Corporation

Inventor： Masafumi KOJIMA ,  Minoru UEMURA ,  Takashi KAWASHIMA ,  Akiyoshi GOTO ,  Kei YAMAMOTO ,  Kazuhiro MARUMO ,  Keiyu OU

IPC: G03F7/039 ,  G03F7/038 ,  C08L33/10 ,  G03F7/32

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a photoacid generator A that generates an acid represented by General Formula (I), the acid having a pKa of −1.00 or more; one or more selected from the group consisting of a photoacid generator B that generates an acid having a pKa larger than that of an acid generated from the photoacid generator A by 1.00 or more, and a nitrogen-containing compound C having a pKa of a conjugate acid thereof larger than that of the acid generated from the photoacid generator A by 1.00 or more; and an acid-decomposable resin, in which in a case where the actinic ray-sensitive or radiation-sensitive resin composition includes a photoacid generator D that generates an acid having a pKa of less than −1.00, a ratio of the number of moles of the photoacid generator A to the number of moles of the photoacid generator D in the composition, is 1.0 or more.

公开(公告)号：US20170115571A1

公开(公告)日：2017-04-27

申请号：US15401385

申请日：2017-01-09

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Keiyu OU ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/09 ,  G03F7/039 ,  G03F7/40 ,  G03F7/32 ,  G03F7/095 ,  G03F7/16 ,  G03F7/30 ,  G03F7/038 ,  G03F7/20

CPC classification number: G03F7/094 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/095 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/3085 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40

Abstract: A pattern forming method includes (A) a step of forming a first resist film on a substrate by using a first resist composition, (B) a step of exposing the first resist film, (C) a step of forming a first pattern by developing the exposed first resist film, (D) a step of forming a planarization layer on the substrate provided with the first pattern by using composition for forming a planarization layer (a), (E) a step of forming a second resist film on the planarization layer by using a second resist composition, (F) a step of exposing the second resist film, and (G) a step of forming a second pattern by developing the exposed second resist film in this order, in which the first pattern is insoluble in the composition for forming the planarization layer (a), and a method for manufacturing an electronic device using the pattern forming method.

公开(公告)号：US20190196326A1

公开(公告)日：2019-06-27

申请号：US16286984

申请日：2019-02-27

Applicant: FUJIFILM Corporation

Inventor： Masafumi KOJIMA ,  Daisuke ASAKAWA ,  Akiyoshi GOTO ,  Keita KATO ,  Keiyu OU

IPC: G03F7/004 ,  G03F7/20 ,  C07C309/17 ,  C07C309/16 ,  C07C309/19 ,  C07C309/07 ,  C07C317/06 ,  C07C317/12 ,  C07D295/185 ,  G03F7/32

CPC classification number: G03F7/0045 ,  C07C309/07 ,  C07C309/16 ,  C07C309/17 ,  C07C309/19 ,  C07C317/06 ,  C07C317/12 ,  C07C2601/14 ,  C07C2603/74 ,  C07D295/185 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/32

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound that generates an acid represented by Formula (I) by irradiation with an actinic ray or radiation, and a resin. The resist film is formed of the actinic ray-sensitive or radiation-sensitive resin composition. In the pattern forming method and the method of manufacturing an electronic device, the actinic ray-sensitive or radiation-sensitive resin composition is used.

公开(公告)号：US20180292751A1

公开(公告)日：2018-10-11

申请号：US16007421

申请日：2018-06-13

Applicant: FUJIFILM Corporation

Inventor： Daisuke ASAKAWA ,  Akiyoshi GOTO ,  Yasunori YONEKUTA ,  Naoya HATAKEYAMA ,  Michihiro SHIRAKAWA ,  Keiyu OU

IPC: G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C08F220/16 ,  C08F220/28 ,  C08F220/36 ,  C08F220/38 ,  C08F220/34 ,  C08F230/08 ,  G03F7/039

Abstract: The present invention has an object to provide an actinic ray-sensitive or radiation-sensitive resin composition having excellent collapse performance, an actinic ray-sensitive or radiation-sensitive film formed using the composition, a pattern forming method using the composition, and a method for manufacturing an electronic device, including the pattern forming method. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin whose solubility with respect to a developer changes by the action of an acid, in which the resin includes a repeating unit derived from a monomer having at least one of a lactone structure or an amide structure, and the dissolution parameter of the monomer is 24.0 or more.

公开(公告)号：US20160313645A1

公开(公告)日：2016-10-27

申请号：US15200059

申请日：2016-07-01

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Keiyu OU ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO ,  Masafumi KOJIMA

IPC: G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2035 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325

Abstract: The present invention relates to a pattern forming method including: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irradiation with specific actinic ray or radiation, and a (C) solvent, exposing the film, and developing the exposed film using a developer including an organic solvent, in which the resin (A) has a structure in which a polar group is protected with a leaving group which decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I).

公开(公告)号：US20160223905A1

公开(公告)日：2016-08-04

申请号：US15092871

申请日：2016-04-07

Applicant: FUJIFILM Corporation

Inventor： Keiyu OU ,  Keita KATO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO ,  Sou KAMIMURA

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/325

Abstract: This active light-sensitive or radiation-sensitive resin composition contains a resin (A), a compound (B) capable of generating an acid upon irradiation with active light or radiation, and a compound (C) having at least one oxygen atom. The compound (C) does not include the resin (A) and the compound (B).

Abstract translation: 该活性的光敏性或辐射敏感性树脂组合物含有树脂（A），能够用活性光或辐射照射时能产生酸的化合物（B）和具有至少一个氧原子的化合物（C）。 化合物（C）不包括树脂（A）和化合物（B）。