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23 条记录 (耗时 0.015 秒)

    Method and system for fast inspecting defects
    1.
    发明授权
    Method and system for fast inspecting defects 有权

    公开(公告)号：US10380731B1

    公开(公告)日：2019-08-13

    申请号：US14697066

    申请日：2015-04-27

    申请人： Hermes Microvision Inc.

    发明人： Wei Fang ,  Jack Jau

    IPC分类号： H01J37/28 ,  G06T7/00 ,  H01J37/22 ,  G01N23/2251

    摘要： A method and system for inspecting defects saves scanned raw data as an original image so as to save time for repeated scanning and achieve faster defect inspection and lower false rate by reviewing suspicious defects and other regions of interest in the original image by using the same or different image-processing algorithm with the same or different parameters.

    Charged particle beam apparatus
    3.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号：US09177758B2

    公开(公告)日：2015-11-03

    申请号：US14564921

    申请日：2014-12-09

    申请人： Hermes Microvision Inc.

    发明人： Zhongwei Chen ,  Jack Jau ,  Weiming Ren ,  Chiyan Kuan ,  Yixiang Wang ,  Xiaoli Guo ,  Feng Cao

    IPC分类号： H01J37/26 ,  H01J37/28 ,  H01J37/22

    CPC分类号： H01J37/261 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/063 ,  H01J2237/10 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24528 ,  H01J2237/2801 ,  H01J2237/2804 ,  H01J2237/2806 ,  H01J2237/2814

    摘要： The present invention provides a dual-beam apparatus which employs the dark-field e-beam inspection method to inspect small particles on a surface of a sample such as wafer and mask with high throughput. The dual beam apparatus comprises two single-beam dark-field units placed in a same vacuum chamber and in two different orientations. The two single-beam dark-field units can perform the particle inspection separately or almost simultaneously by means of the alternately-scanning way. The invention also proposes a triple-beam apparatus for both inspecting and reviewing particles on a sample surface within the same vacuum chamber. The triple-beam apparatus comprises one foregoing dual-beam apparatus performing the particle inspection and one high-resolution SEM performing the particle review.

    摘要翻译： 本发明提供一种双光束装置，其采用暗场电子束检查方法以高生产量检查诸如晶片和掩模的样品表面上的小颗粒。 双光束装置包括放置在相同真空室中并具有两个不同取向的两个单光束暗场单元。 两个单光束暗场单元可以通过交替扫描方式分别或几乎同时进行粒子检测。 本发明还提出了一种用于检查和检查在相同真空室内的样品表面上的颗粒的三光束装置。 三光束装置包括执行颗粒检查的一个前述双光束装置和执行颗粒检查的一个高分辨率SEM。

    Inspection method and system
    4.
    发明授权
    Inspection method and system 有权

    公开(公告)号：US10102619B1

    公开(公告)日：2018-10-16

    申请号：US14738791

    申请日：2015-06-12

    申请人： Hermes Microvision Inc.

    发明人： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

    IPC分类号： G06K9/00 ,  G06T7/00

    摘要： An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

    Apparatus of Plural Charged-Particle Beams
    6.
    发明申请
    Apparatus of Plural Charged-Particle Beams 审中-公开
    多次充电粒子束装置

    公开(公告)号：US20160284505A1

    公开(公告)日：2016-09-29

    申请号：US15078369

    申请日：2016-03-23

    申请人： Hermes Microvision Inc.

    发明人： Weiming Ren ,  Shuai Li ,  Xuedong Liu ,  Zhongwei Chen ,  Jack Jau

    IPC分类号： H01J37/147 ,  H01J37/22 ,  H01J37/06 ,  H01J37/20 ,  H01J37/10

    CPC分类号： H01J37/28 ,  H01J2237/0435 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/2806 ,  H01J2237/2813

    摘要： A multi-beam apparatus for observing a sample with oblique illumination is proposed. In the apparatus, a new source-conversion unit changes a single electron source into a slant virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample with oblique illumination, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means not only forms the slant virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. The apparatus can provide dark-field images and/or bright-field images of the sample.

    摘要翻译： 提出了一种用于以倾斜照明观察样品的多光束装置。 在该装置中，新的源转换单元将单个电子源改变为倾斜的虚拟多源阵列，初级投影成像系统投射该阵列以在倾斜照明下在样本上形成多个探测点，并且聚光透镜调整 多个探针点的电流。 在源转换单元中，图像形成装置不仅形成倾斜虚拟多源阵列，而且还补偿多个探测点的离轴像差。 该装置可以提供样品的暗场图像和/或亮场图像。

    Method and system of classifying defects on a wafer
    7.
    发明授权
    Method and system of classifying defects on a wafer 有权
    在晶片上分类缺陷的方法和系统

    公开(公告)号：US09436988B2

    公开(公告)日：2016-09-06

    申请号：US14325802

    申请日：2014-07-08

    申请人： Hermes-Microvision, Inc.

    发明人： Wei Fang ,  Zhaoli Zhang ,  Jack Jau

    IPC分类号： G06K9/00 ,  G06T7/00

    CPC分类号： G06T7/0008 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

    摘要： A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.

    摘要翻译： 提供了在具有相同芯片和相应系统的晶片上分类缺陷的方法。 在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。 然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。 最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。 系统有一些模块分别对应于该方法的步骤。

    Method and system for measuring critical dimension and monitoring fabrication uniformity
    10.
    发明授权
    Method and system for measuring critical dimension and monitoring fabrication uniformity 有权
    测量临界尺寸和监测制造均匀性的方法和系统

    公开(公告)号：US09100553B2

    公开(公告)日：2015-08-04

    申请号：US13785256

    申请日：2013-03-05

    申请人： HERMES MICROVISION INC.

    发明人： Wei Fang ,  Jack Jau ,  Hong Xiao

    IPC分类号： H04N7/18 ,  G06T7/00

    CPC分类号： H04N7/18 ,  G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/20016 ,  G06T2207/30148 ,  H04N7/183

    摘要： A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

    摘要翻译： 用于测量临界尺寸（CD）的方法包括以下步骤：扫描模具的至少一个感兴趣区域以获得至少一个扫描图像; 将扫描图像对准至少一个设计的布局图案，以识别扫描图像内的多个边界; 以及从与设计的布局图案对应的特定类型的CD相关联的图案的边界或多个边界测量的平均距离，以获得模具的CD的值。 可以通过相对较高的扫描速度获得的具有较低分辨率的扫描图像获得模具的临界尺寸的值，因此上述方法可以获得整个晶片内每个管芯的CD值，以监测半导体的均匀性 制造过程在可接受的检验时间内。