公开(公告)号：US20210225674A1

公开(公告)日：2021-07-22

申请号：US16646790

申请日：2019-02-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Soichiro ETO ,  Hiroyuki MINEMURA ,  Tatehito USUI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  G01B11/06

Abstract: In thickness/depth measurement of a wafer in etching, variation occurs in detected light quantity due to fluctuation of light quantity of a light source or fluctuation of air in a region through which light passes, and measurement accuracy of thickness/depth is reduced, and thus the total light quantity or average light quantity of an arbitrary wavelength is calculated from an optical spectrum measured at each time instant during etching, estimated total light quantity or estimated average light quantity at the present time, which is estimated using total light quantity or average light quantity measured prior to the present time, is calculated, a change rate, as a ratio of the total light quantity at the present time to the estimated total light quantity or a ratio of the average light quantity to the estimated average light quantity, is calculated, the calculated change rate is used to correct light quantity of each wavelength at the present time, and the corrected light quantity of each wavelength is used to perform thickness/depth measurement.

公开(公告)号：US20160177449A1

公开(公告)日：2016-06-23

申请号：US14973592

申请日：2015-12-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: C23C16/513

CPC classification number: H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Abstract translation: 使用等离子体处理设置在处理室中的晶片的等离子体装置包括设置在光源和另一窗口之间的一个窗口，另一个窗口，光接收单元，光源和光分路单元， 通过光源到朝向处理室的光路和沿另一方向的光路，并且从另一窗口反射处理室中的光;以及检测单元，其检测从等离子体发射的光并由 光接收单元使用一个分支光和其他分支和反射光。 该装置根据基于检测结果调整的处理条件处理晶片。

公开(公告)号：US20190237337A1

公开(公告)日：2019-08-01

申请号：US16328228

申请日：2018-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Tatehito USUI ,  Masaru IZAWA ,  Kenichi KUWAHARA

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/308 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

CPC classification number: H01L21/30655 ,  G01B11/0625 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32963 ,  H01J2237/24578 ,  H01J2237/332 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S1) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S2) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S3) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

公开(公告)号：US20180269042A1

公开(公告)日：2018-09-20

申请号：US15982827

申请日：2018-05-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: H01J37/32

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

公开(公告)号：US20160211186A1

公开(公告)日：2016-07-21

申请号：US14851744

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32963

Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.

Abstract translation: 提供一种能够进行稳定的端点检测的半导体晶片的处理装置和处理方法。 在等离子体处理装置或方法中，其中包括预先形成在安装在位于真空容器内的处理室内的样品台上的晶片的表面上的多个膜层的膜结构的处理目标膜层，通过 使用与处理室形成的等离子体，使用由多个不同时间间隔内的光的接收结果构成的数据来检测多个波长的光的强度，该光接收器从内部接收多个波长的光 的处理室。

公开(公告)号：US20180277377A1

公开(公告)日：2018-09-27

申请号：US15714181

申请日：2017-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Soichiro ETO ,  Takeshi OHMORI ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.

公开(公告)号：US20180269118A1

公开(公告)日：2018-09-20

申请号：US15690660

申请日：2017-08-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Kenichi KUWAHARA ,  Naoki YASUI ,  Masaru IZAWA ,  Tatehito USUI ,  Takeshi OHMORI

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20170358504A1

公开(公告)日：2017-12-14

申请号：US15673151

申请日：2017-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

公开(公告)号：US20160284610A1

公开(公告)日：2016-09-29

申请号：US14852189

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

Abstract translation: 一种处理层结构的等离子体处理方法，其特征在于，预先形成在设置在真空容器内的处理室中的晶片的上表面上并且具有被处理层和底层涂层的处理层结构， 通过将实际图案数据与实际图案数据进行比较的结果来计算在待处理的层处理的层的蚀刻量的步骤，该检测图案数据通过组合通过处理该层获得的干涉光的参数波长的两种强度图案而获得 具有不同厚度的三层或多层底涂层的结构以及处理任何晶片之前要处理的层和具有作为在任何晶片上的层结构的处理期间获得的干涉光的波长的参数的面积图案 。