公开(公告)号：US08992689B2

公开(公告)日：2015-03-31

申请号：US13408703

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32357 ,  H01L21/67201

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract translation: 提供从底物中除去含卤素残基的方法。 通过结合加热和等离子体消除步骤，可以提高制造产量。 此外，通过适当地控制减压室中的压力，也可以提高除去效率。

公开(公告)号：US08144329B2

公开(公告)日：2012-03-27

申请号：US13177442

申请日：2011-07-06

Applicant: James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

Inventor： James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

IPC: G01N21/55

CPC classification number: H01L21/67069 ,  H01L21/67253 ,  H01L22/20

Abstract: Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.

Abstract translation: 本发明的方面包括在基板处理系统中控制等离子体的方法。 一个实施例提供了在处理第一组一个或多个基板之前控制在腔室内从等离子体反射的反射电磁辐射的第一组波长强度，将第一组反射电磁辐射的波长强度与处理中的RF功率相关联 系统，基于反射电磁辐射的第一组波长强度调整匹配电路，处理衬底处理系统中的第一组一个或多个衬底，控制从等离子体反射的反射电磁辐射的第二组波长强度 并且将反射的电磁辐射的第二组波长强度与处理系统内的RF功率相关联。

公开(公告)号：US08097088B1

公开(公告)日：2012-01-17

申请号：US13088791

申请日：2011-04-18

Applicant: Eu Jin Lim ,  Adauto Diaz, Jr. ,  Benjamin Schwarz ,  James P. Cruse ,  Charles Hardy

Inventor： Eu Jin Lim ,  Adauto Diaz, Jr. ,  Benjamin Schwarz ,  James P. Cruse ,  Charles Hardy

IPC: B08B5/00

CPC classification number: H01L21/67069 ,  C23C16/4405 ,  H01J37/32082 ,  H01J37/32862 ,  H01J37/32899 ,  Y10S134/902 ,  Y10S438/905

Abstract: Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

Abstract translation: 在包括共享资源的第一和第二处理室的双室处理系统中处理衬底的方法可以包括在第一处理室和第二处理室中的每一个中执行第一内室清洁; 并且随后通过以下步骤来处理第一处理室或第二处理室之一中的衬底：将衬底提供到第一处理室或第二处理室中的一个; 向所述第一处理室和所述第二处理室提供处理气体; 仅在其中包含基板的第一处理室或第二处理室中的一个中形成等离子体; 以及通过形成在设置在第一处理室和第二处理室中的相应基板支撑件的表面中的一个或多个通道，在处理基板的同时，向第一处理室和第二处理室提供惰性气体。

公开(公告)号：US20110011743A1

公开(公告)日：2011-01-20

申请号：US12889286

申请日：2010-09-23

Applicant: James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

Inventor： James P. Cruse ,  Theresa Kramer Guarini ,  Jeffrey Charles Pierce

IPC: C25D21/12

CPC classification number: H01L21/67069 ,  H01L21/67253 ,  H01L22/20

Abstract: Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. In one embodiment, an apparatus for monitoring a plasma in a substrate processing system is provided. The apparatus includes a plasma chamber having a plurality of walls, at least one of the plurality of walls having a dielectric ceiling, at least one inner coil element and at least one outer coil element disposed outside the chamber, a current sensor coupled to one of the inner coil element or the outer coil element, the current sensor adapted to detect current from an inductively coupled plasma generated in the plasma chamber, an RF power source, and one or more adjustable capacitors coupled to each of the one or more coil elements.

Abstract translation: 本发明的方面包括可以用于通过使用等离子体数据监视组件来监测和调整衬底处理系统中的等离子体的方法和装置。 在一个实施例中，提供了一种用于监测衬底处理系统中的等离子体的装置。 该装置包括具有多个壁的等离子体室，多个壁中的至少一个壁具有电介质天花板，至少一个内部线圈元件和设置在室外部的至少一个外部线圈元件，耦合到 内部线圈元件或外部线圈元件，电流传感器适于检测来自在等离子体室中产生的感应耦合等离子体的电流，RF功率源以及耦合到所述一个或多个线圈元件中的每一个的一个或多个可调电容器。

公开(公告)号：US20090025878A1

公开(公告)日：2009-01-29

申请号：US11828568

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20080179181A1

公开(公告)日：2008-07-31

申请号：US11733984

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极 工件支撑电极为频率f 1。 该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080179008A1

公开(公告)日：2008-07-31

申请号：US11685772

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: H01L21/306

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.

Abstract translation: 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界 。 真空泵联接到下部处理区。 较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。 耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

公开(公告)号：US08496756B2

公开(公告)日：2013-07-30

申请号：US12915240

申请日：2010-10-29

Applicant: James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

Inventor： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

IPC: B08B6/00

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括将处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

公开(公告)号：US08473247B2

公开(公告)日：2013-06-25

申请号：US12915260

申请日：2010-10-29

Applicant: James P. Cruse ,  Dermot Cantwell ,  Michael R. Rice ,  Thorsten Kril ,  Charles Hardy

Inventor： James P. Cruse ,  Dermot Cantwell ,  Michael R. Rice ,  Thorsten Kril ,  Charles Hardy

IPC: G04F1/00 ,  G04F3/00 ,  G04F5/00 ,  G04F7/00 ,  G04F8/00 ,  G04F10/00 ,  G04G5/00 ,  G04G7/00 ,  G40G15/00

CPC classification number: H01L21/67276

Abstract: Methods for monitoring processing equipment are provided herein. In some embodiments, a method for monitoring processing equipment when in an idle state for a period of idle time may include selecting a test from a list of a plurality of tests to perform on the processing equipment when the processing equipment is in the idle state, wherein the test has a total run time; starting the selected test; comparing a remaining idle time of the period of idle time to a remaining run time of the total run time as the selected test is performed; and determining whether to end the selected test prior to completing the total run time in response to the comparison.

Abstract translation: 本文提供了监控处理设备的方法。 在一些实施例中，一种用于在空闲状态下监视处理设备一段空闲时间的方法可以包括：当处理设备处于空闲状态时，从处理设备执行的多个测试的列表中选择一个测试， 其中所述测试具有总运行时间; 开始选择测试; 将执行所选择的测试的空闲时间的剩余空闲时间与总运行时间的剩余运行时间进行比较; 以及响应于所述比较，确定在完成所述总运行时间之前是否结束所选择的测试。

公开(公告)号：US08080479B2

公开(公告)日：2011-12-20

申请号：US11733858

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

Abstract translation: 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。