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    Electrochromic element
    1.
    发明授权
    Electrochromic element 失效
    电致变色元件

    公开(公告)号：US5054895A

    公开(公告)日：1991-10-08

    申请号：US332967

    申请日：1989-04-04

    申请人： Jun Minoura ,  Toshiya Uemura ,  Shigeyuki Takahashi ,  Toshiyasu Ito ,  Katsuaki Okabayashi

    发明人： Jun Minoura ,  Toshiya Uemura ,  Shigeyuki Takahashi ,  Toshiyasu Ito ,  Katsuaki Okabayashi

    IPC分类号： G02F1/15

    CPC分类号： G02F1/15

    摘要： The present invention relates to an electrochromic element for use in various types of displays and dimming devices, and having a structure comprising bases, a pair of electrodes provided on the bases, at least one of the electrodes being a transparent electrode, color-forming layers provided between the pair of electrodes, and electrolyte superposed with the color-forming layers, and also provided between the pair of electrodes, and a light stabilizer made to be contained in the color-forming layers by being contained in the electrolyte.

    摘要翻译： 本发明涉及用于各种类型的显示器和调光装置的电致变色元件，并且具有包括基底的结构，设置在基底上的一对电极，至少一个电极是透明电极，成色层 设置在一对电极之间，以及与成色层重叠的电解质，并且还设置在该对电极之间，以及通过包含在电解质中而被包含在成色层中的光稳定剂。

    Electrochromic device with a reference electrochromic element
    3.
    发明授权
    Electrochromic device with a reference electrochromic element 失效
    具有参考电致变色元件的电致变色器件

    公开(公告)号：US5073011A

    公开(公告)日：1991-12-17

    申请号：US605359

    申请日：1990-10-30

    申请人： Toshiyasu Ito ,  Takaaki Mori ,  Mamoru Kato ,  Toshiya Uemura

    发明人： Toshiyasu Ito ,  Takaaki Mori ,  Mamoru Kato ,  Toshiya Uemura

    IPC分类号： G02F1/155 ,  G02F1/163

    CPC分类号： G02F1/163

    摘要： An electrochromic device is disclosed. The electrochromic device includes a pair of bases, and both a primary and a reference electrochromic element provided between the bases. The reference electrode is electrically connected to the primary electrochromic element so as to maintain the color-developing and fading potentials of the primary electrochromic element at predetermined voltages. A power regulator is also provided for driving the primary electrochromic element based in part on the output of the reference electrochromic element.

    摘要翻译： 公开了一种电致变色装置。 电致变色装置包括一对基座，以及设置在基座之间的初级和参考电致变色元件。 参考电极电连接到初级电致变色元件，以便将初级电致变色元件的显色和衰减电位保持在预定电压。 还提供功率调节器，用于部分地基于参考电致变色元件的输出来驱动主电致变色元件。

    Resin products and process for producing the same
    4.
    发明授权
    Resin products and process for producing the same 失效
    树脂制品及其制造方法

    公开(公告)号：US5484516A

    公开(公告)日：1996-01-16

    申请号：US225286

    申请日：1994-04-08

    申请人： Toshikazu Funahashi ,  Yasuhiko Ogisu ,  Mamoru Kato ,  Shigeyuki Takahashi ,  Toshiya Uemura

    发明人： Toshikazu Funahashi ,  Yasuhiko Ogisu ,  Mamoru Kato ,  Shigeyuki Takahashi ,  Toshiya Uemura

    IPC分类号： B60R19/52 ,  C23C18/16 ,  C25D5/02 ,  C25D5/56 ,  H05K1/00 ,  H05K3/18 ,  H05K3/24

    CPC分类号： C25D5/56 ,  B60R19/52 ,  C23C18/1607 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/38 ,  C25D5/022 ,  B60R2019/525 ,  H05K1/0284 ,  H05K3/182 ,  H05K3/184 ,  H05K3/241

    摘要： Contoured step sections and contoured grooves along the step sections are formed on a grille body. The grille body is subjected to chemical plating. Since the grooves have narrow bottoms, the bottoms remain unplated, so that a chemical plating layer is formed on the entire surface of the grille body except for the bottoms. The grille body having the chemical plating layer formed thereon is then subjected to an electroplating step having a plurality of steps. An undercoat plating layer is formed on the chemical plating layer formed on the portions where decorative plating is to be applied. The chemical plating layer formed on the portions where no decorative plating is to be applied is dissolved with a predetermined solution. Subsequently, a general electroplating layer is formed on the undercoat plating layer. Thus, the chemical plating layer and the electroplating layers are formed only on the to-be-plated portions. The plated portions are covered with an electroforming mask, and a coating is applied onto the exposed portions to form a coating layer, where the edges of the electroforming mask can be registered with the edges of the plating layer. Accordingly, the boundaries between the coating layer and the plating layer can clearly be defined.

    摘要翻译： 在格栅体上形成沿着台阶部分的轮廓台阶部分和轮廓的凹槽。 格栅体进行化学镀。 由于凹槽具有窄的底部，底部保持未镀层，所以除了底部之外，在格栅体的整个表面上形成化学镀层。 其上形成有化学镀层的格栅体然后进行具有多个步骤的电镀步骤。 在形成在要施加装饰性电镀部分的化学镀层上形成底涂层。 用规定的溶液溶解在不施加装饰电镀的部分上形成的化学镀层。 随后，在底涂层上形成一般电镀层。 因此，化学镀层和电镀层仅形成在被镀层部分上。 电镀部分被电铸掩模覆盖，并且将涂层施加到暴露部分上以形成涂层，其中电铸掩模的边缘可以与镀层的边缘对准。 因此，可以清楚地限定涂层和镀层之间的边界。

    Partially plated resin products and partial plating process therefor
    5.
    发明授权
    Partially plated resin products and partial plating process therefor 失效
    部分电镀树脂产品和部分电镀工艺

    公开(公告)号：US5441626A

    公开(公告)日：1995-08-15

    申请号：US225066

    申请日：1994-04-08

    申请人： Ysauhiko Ogisu ,  Mamoru Kato ,  Shigeyuki Takahashi ,  Toshiya Uemura ,  Toshikazu Funahashi

    发明人： Ysauhiko Ogisu ,  Mamoru Kato ,  Shigeyuki Takahashi ,  Toshiya Uemura ,  Toshikazu Funahashi

    IPC分类号： B60R19/52 ,  C23C18/16 ,  C25D5/02 ,  C25D5/56 ,  H05K1/00 ,  H05K3/18 ,  H05K3/24 ,  C25D7/00

    CPC分类号： C25D5/022 ,  B60R19/52 ,  C23C18/1607 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/38 ,  C25D5/56 ,  B60R2019/525 ,  H05K1/0284 ,  H05K3/182 ,  H05K3/184 ,  H05K3/241 ,  Y10S205/917

    摘要： Annular grooves having substantially V-shaped cross sections are formed on the front surface and the rear surface of a grille body. A through hole communicating to the front surface and the rear surface of the grille body is also formed so that the front aperture may be smaller than the rear aperture. A protrusion is formed on the rear surface of the grille body, which is located inner than the groove. The grille body is immersed into a chemical plating solution to form a chemical plating layer on the entire surface of the grille body except for the bottoms of the grooves. The grille body is then subjected to undercoat plating, in which the grille body is immersed into a predetermined plating solution utilizing the protrusion as a kind of electrode so as to electrically charge the chemical plating layer present on the front surface from the layer present on the protrusion and through the layer present in the through hole to allow an undercoat plating layer to be formed on the portions where decorative plating is formed. The chemical plating layer formed on the portions where no decorative plating is formed is dissolved by a predetermined solution. A general electroplating layer is formed likewise on the undercoat plating layer. The chemical plating layer and the electroplating layer are formed only on the to-be-plated portions. The protrusion does not impair the front appearance of the front grille.

    摘要翻译： 在格栅体的前表面和后表面上形成具有大致V形截面的环形槽。 还形成了与格栅体的前表面和后表面连通的通孔，使得前孔可以比后孔小。 格栅体的后表面形成有位于凹槽内侧的突出部。 将格栅体浸入化学镀液中，除了槽的底部之外，在格栅体的整个表面上形成化学镀层。 然后对格栅体进行底涂镀层，其中将格栅体浸入预定的电镀液中，利用该突起作为一种电极，从而使存在于前表面上的化学镀层从存在于 突出并通过存在于通孔中的层，以允许在形成装饰性电镀的部分上形成底涂层。 形成在没有装饰电镀的部分上形成的化学镀层通过预定的溶液溶解。 普通的电镀层同样地形成在底涂层镀层上。 化学镀层和电镀层仅形成在被镀层部分上。 突起不会损害前格栅的前部外观。

    Light-emitting semiconductor device and a method of manufacturing it
    6.
    发明授权
    Light-emitting semiconductor device and a method of manufacturing it 有权
    发光半导体装置及其制造方法

    公开(公告)号：US07291868B2

    公开(公告)日：2007-11-06

    申请号：US10564416

    申请日：2004-08-20

    申请人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

    发明人： Masanobu Ando ,  Masahito Nakai ,  Toshiya Uemura ,  Masaaki Nakayama

    IPC分类号： H01L29/24

    CPC分类号： B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01S5/183 ,  H01S5/3086 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/04

    摘要： In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.

    摘要翻译： 在表面发射型半导体激光器的层结构20中，21和24分别表示由n型GaN制成的n型接触层和由p型AlGaN制成的p层。 在激光器中，分别在InGaN有源层23的下方形成由n型InGaN构成的n型DBR层22和由电介质形成的DBR层25，各层形成与z轴垂直的反射面 。 通过在有源层23的上方形成与z轴垂直的反射面，得到共振器。 这里，两个反射面之间的光学距离被设置为振荡波长的一半的整数倍。 因此，与现有技术相比，本发明能够制造出比现有技术更容易的表面发射型半导体激光器。

    Method of making group III nitride compound semiconductor light emitting element
    9.
    发明授权
    Method of making group III nitride compound semiconductor light emitting element 失效
    制备III族氮化物化合物半导体发光元件的方法

    公开(公告)号：US07078252B2

    公开(公告)日：2006-07-18

    申请号：US11130153

    申请日：2005-05-17

    申请人： Toshiya Uemura

    发明人： Toshiya Uemura

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48247

    摘要： A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The filling material has a refractive index substantially equal to that of the III group nitride system compound semiconductor layer or closer to that of the III group nitride system compound semiconductor layer than that of the transparent substrate.

    摘要翻译： III族氮化物系化合物半导体发光元件具有：在表面上具有凹部的透明基板; 填充材料，其嵌入在所述凹部中; 以及形成在所述透明基板的表面上的III族氮化物系化合物半导体层。 填充材料的折射率基本上等于III族氮化物系化合物半导体层的折射率，或者比III族氮化物系化合物半导体层的折射率高于透明基板的折射率。