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    Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
    3.
    发明授权
    Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal 失效
    用于进行光致抗蚀剂剥离和残留物去除的氢光发射端点检测的方法和装置

    公开(公告)号：US07648916B2

    公开(公告)日：2010-01-19

    申请号：US11467842

    申请日：2006-08-28

    申请人： Elizabeth G. Pavel ,  Mark N. Kawaguchi ,  James S. Papanu

    发明人： Elizabeth G. Pavel ,  Mark N. Kawaguchi ,  James S. Papanu

    IPC分类号： H01L21/302

    CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J2237/3342

    摘要： Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.

    摘要翻译： 本文提供了在执行光致抗蚀剂剥离和从衬底或衬底上的膜堆叠移除残余物时监测和检测光发射的方法。 在一个实施例中，提供了一种方法，其包括将包括光致抗蚀剂层的基板定位到处理室中; 使用多步骤等离子体处理来处理光致抗蚀剂层; 以及在所述多级等离子体处理期间监测所述等离子体的氢光发射; 其中所述多步骤等离子体处理包括使用块移除步骤去除大部分光致抗蚀剂层; 并且响应于所监视的氢光发射而切换到过蚀刻步骤。

    DICING PROCESSES FOR THIN WAFERS WITH BUMPS ON WAFER BACKSIDE
    9.
    发明申请
    DICING PROCESSES FOR THIN WAFERS WITH BUMPS ON WAFER BACKSIDE 有权
    用于在背面放置波纹的薄膜的定位方法

    公开(公告)号：US20150279739A1

    公开(公告)日：2015-10-01

    申请号：US14226038

    申请日：2014-03-26

    申请人： Wei-Sheng Lei ,  James S. Papanu ,  Aparna Iyer ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  James S. Papanu ,  Aparna Iyer ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L23/544

    CPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2224/16225

    摘要： Approaches for front side laser scribe plus backside bump formation and laser scribe and plasma etch dicing process are described. For example, a method of dicing a semiconductor wafer having integrated circuits on a front side thereof involves forming first scribe lines on the front side, between the integrated circuits, with a first laser scribing process. The method also involves forming arrays of metal bumps on a backside of the semiconductor wafer, each array corresponding to one of the integrated circuits. The method also involves forming second scribe lines on the backside, between the arrays of metal bumps, with a second laser scribing process, wherein the second scribe lines are aligned with the first scribe lines. The method also involves plasma etching the semiconductor wafer through the second scribe lines to singulate the integrated circuits.

    摘要翻译： 描述了用于前侧激光划片加背面凸块形成和激光划线和等离子体蚀刻切割工艺的方法。 例如，在前侧具有集成电路的半导体晶片的切割方法包括在第一激光划线工序之间，在集成电路之间的正面侧形成第一划线。 该方法还涉及在半导体晶片的背面形成金属凸块阵列，每​​个阵列对应于一个集成电路。 该方法还涉及在金属凸块阵列之间的背侧，第二激光划线工艺之间形成第二刻划线，其中第二刻划线与第一划刻线对准。 该方法还包括通过第二划线等离子体蚀刻半导体晶片以对集成电路进行分离。

    APPROACHES FOR CLEANING A WAFER DURING HYBRID LASER SCRIBING AND PLASMA ETCHING WAFER DICING PROCESSES
    10.
    发明申请
    APPROACHES FOR CLEANING A WAFER DURING HYBRID LASER SCRIBING AND PLASMA ETCHING WAFER DICING PROCESSES 审中-公开
    在混合激光切割和等离子体蚀刻抛光过程中清洗一个波形的方法

    公开(公告)号：US20150255349A1

    公开(公告)日：2015-09-10

    申请号：US14201452

    申请日：2014-03-07

    申请人： James Matthew Holden ,  Wei-Sheng Lei ,  James S. Papanu ,  Ajay Kumar

    发明人： James Matthew Holden ,  Wei-Sheng Lei ,  James S. Papanu ,  Ajay Kumar

    IPC分类号： H01L21/82 ,  H01L21/428 ,  H01J37/32 ,  H01L21/467

    CPC分类号： H01L21/82 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3081 ,  H01L21/428 ,  H01L21/467 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3192 ,  H01L23/544 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/27831 ,  H01L2224/94 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1436 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00

    摘要： Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface having a plurality of integrated circuits thereon involves forming an underfill material layer between and covering metal pillar/solder bump pairs of the integrated circuits. The method also involves forming a mask layer on the underfill material layer. The method also involves laser scribing mask layer and the underfill material layer to provide scribe lines exposing portions of the semiconductor wafer between the integrated circuits. The method also involves removing the mask layer. The method also involves, subsequent to removing the mask layer, plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the second insulating layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves, subsequent to the plasma etching, thinning but not removing the underfill material layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.

    摘要翻译： 描述了在混合式激光划线和等离子体蚀刻晶片切割工艺期间清洁晶片的方法。 在一个实例中，一种在其上具有多个集成电路的前表面的半导体晶片的切割方法包括在集成电路的金属柱/焊料凸块对之间形成底部填充材料层。 该方法还涉及在底部填充材料层上形成掩模层。 该方法还包括激光划线掩模层和底部填充材料层，以提供在集成电路之间暴露半导体晶片的部分的划线。 该方法还涉及去除掩模层。 该方法还涉及在除去掩模层之后，通过划线等离子体蚀刻半导体晶片以对集成电路进行分离，其中第二绝缘层在等离子体蚀刻的至少一部分期间保护集成电路。 该方法还包括在等离子体蚀刻之后，变薄而不去除底部填充材料层以部分地暴露集成电路的金属柱/焊料凸块对。