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公开(公告)号：US08314415B2
公开(公告)日：2012-11-20
申请号：US12668386
申请日：2008-06-20
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3095 , H01S5/34333
摘要： A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.
摘要翻译： 辐射发射半导体本体包括接触层和有源区。 半导体本体具有布置在接触层和有源区之间的隧道结。 有源区具有包含至少两个有源层的多量子阱结构，当工作电流被施加到半导体本体中时，其发射电磁辐射。
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公开(公告)号：US09806223B2
公开(公告)日：2017-10-31
申请号：US12985903
申请日：2011-01-06
申请人： Magnus Ahlstedt , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
发明人： Magnus Ahlstedt , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L33/0079 , H01L33/16
摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
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3.发明申请Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip 有权制造光电半导体芯片的方法和光电子半导体芯片公开(公告)号：US20080203407A1
公开(公告)日：2008-08-28
申请号：US12011458
申请日：2008-01-25
申请人： Magnus Ahlstedt , Lutz Hoppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
发明人： Magnus Ahlstedt , Lutz Hoppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L33/0079 , H01L33/16
摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。
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公开(公告)号：US20100207100A1
公开(公告)日：2010-08-19
申请号：US12668386
申请日：2008-06-20
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3095 , H01S5/34333
摘要： A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.
摘要翻译： 辐射发射半导体本体包括接触层和有源区。 半导体本体具有布置在接触层和有源区之间的隧道结。 有源区具有包含至少两个有源层的多量子阱结构，当工作电流被施加到半导体本体中时，其发射电磁辐射。
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5.发明授权Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip 有权制造光电半导体芯片的方法和光电子半导体芯片公开(公告)号：US07981712B2
公开(公告)日：2011-07-19
申请号：US12011458
申请日：2008-01-25
申请人： Magnus Ahlstedt , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
发明人： Magnus Ahlstedt , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss , Martin Strassburg
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L33/0079 , H01L33/16
摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。
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公开(公告)号：US08362506B2
公开(公告)日：2013-01-29
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译： 光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。 光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。 光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。
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7.发明申请OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY 审中-公开具有隧道结的光电子半导体体以及用于生产这种半导体体的方法公开(公告)号：US20110012088A1
公开(公告)日：2011-01-20
申请号：US12919532
申请日：2009-02-26
CPC分类号： H01L33/04 , H01L29/88 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/3095 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic semiconductor body includes an epitaxial semiconductor layer sequence including a tunnel junction including an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation.
摘要翻译： 光电半导体本体包括外延半导体层序列，其包括在n型隧道结层和p型隧道结层之间包括中间层的隧道结，其中中间层具有面向n型的n阻挡层 隧道结层，面向p型隧道结层的p阻挡层和具有与n阻挡层和p阻挡层的材料组成不同的材料组成的中间层; 以及发射电磁辐射的有源层。
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公开(公告)号：US20100230698A1
公开(公告)日：2010-09-16
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译： 光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。 光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。 光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。
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公开(公告)号：US20120280207A1
公开(公告)日：2012-11-08
申请号：US13546857
申请日：2012-07-11
申请人： Adrian AVRAMESCU , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian AVRAMESCU , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2） 用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。 还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。
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公开(公告)号：US20090090900A1
公开(公告)日：2009-04-09
申请号：US11989512
申请日：2006-07-28
申请人： Adrian Avramescu , Volker Harle , Lutz Hoppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Harle , Lutz Hoppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p-doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n-doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and a method for producing such a semiconductor chip.
摘要翻译： 光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的p掺杂阻挡层（1），有源区域（2），其中 适用于产生电磁辐射，有源区基于六方晶系化合物半导体，以及用于有源区（2）的n掺杂势垒层（3）。 还公开了包括这种半导体芯片的部件，以及这种半导体芯片的制造方法。
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