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    Method for producing a semiconductor laser device
    1.
    发明授权
    Method for producing a semiconductor laser device 失效
    半导体激光装置的制造方法

    公开(公告)号：US5413956A

    公开(公告)日：1995-05-09

    申请号：US995064

    申请日：1992-12-22

    申请人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    发明人： Masanori Watanabe ,  Ken Ohbayashi ,  Kazuaki Sasaki ,  Osamu Yamamoto ,  Mitsuhiro Matsumoto

    IPC分类号： H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S5/16 ,  H01L21/20

    CPC分类号： H01S5/0425 ,  H01S5/164 ,  H01S5/0201 ,  H01S5/0281 ,  Y10S148/026 ,  Y10S148/095 ,  Y10S148/104 ,  Y10S148/106 ,  Y10S148/143 ,  Y10S438/945

    摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

    摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。

    Light-emitting diode having a surface electrode of a tree-like form
    4.
    发明授权
    Light-emitting diode having a surface electrode of a tree-like form 失效
    具有树状形状的表面电极的发光二极管

    公开(公告)号：US5309001A

    公开(公告)日：1994-05-03

    申请号：US980666

    申请日：1992-11-24

    申请人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    发明人： Masanori Watanabe ,  Mitsuhiro Matsumoto ,  Hiroshi Nakatsu ,  Tadashi Takeoka ,  Osamu Yamamoto ,  Kazuaki Sasaki

    IPC分类号： H01L33/38 ,  H01L33/00

    CPC分类号： H01L33/385 ,  H01L33/38 ,  H01L33/20 ,  H01L33/24

    摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

    摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

    Semiconductor light emitting device with current confining layer
    5.
    发明授权
    Semiconductor light emitting device with current confining layer 失效
    具有电流限制层的半导体发光器件

    公开(公告)号：US5404031A

    公开(公告)日：1995-04-04

    申请号：US270115

    申请日：1994-07-01

    申请人： Kazuaki Sasaki ,  Hiroshi Nakatsu ,  Osamu Yamamoto ,  Masanori Watanabe ,  Saburo Yamamoto

    发明人： Kazuaki Sasaki ,  Hiroshi Nakatsu ,  Osamu Yamamoto ,  Masanori Watanabe ,  Saburo Yamamoto

    IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/38

    CPC分类号： H01L33/38 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/145 ,  H01L33/24 ,  H01L33/405

    摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.

    摘要翻译： 公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。 半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。 在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。

    Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
    10.
    发明授权
    Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same 失效
    能够在基本振荡模式下具有良好的稳定性，降低电流泄漏和降低振荡阈限的半导体发光装置及其制造方法

    公开(公告)号：US5516723A

    公开(公告)日：1996-05-14

    申请号：US435391

    申请日：1995-05-05

    申请人： Kazuaki Sasaki ,  Osamu Yamamoto

    发明人： Kazuaki Sasaki ,  Osamu Yamamoto

    IPC分类号： H01L33/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/40 ,  H01L21/20

    CPC分类号： H01S5/2232 ,  H01L33/145 ,  H01S2304/12 ,  H01S5/18352 ,  H01S5/2206 ,  H01S5/3202 ,  H01S5/32308 ,  H01S5/4031

    摘要： A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.

    摘要翻译： 半导体激光器件包括具有p型和n型导电类型之一的衬底以及形成在衬底的表面上并具有另一种导电性的电流限制层。 电流收缩层具有延伸到衬底表面的通道，用于在垂直于衬底表面的方向上限定电流路径。 通道是沿垂直于基板的端面的方向延伸的带状图案。 具有一种导电性的第三覆层被填充在通道中，第三包覆层的表面与电流限制层的表面齐平。 形成在第三包层和电流收缩层上的构成双异质结构的第一包层，有源层和第二覆层。