公开(公告)号：US11749776B2

公开(公告)日：2023-09-05

申请号：US17552657

申请日：2021-12-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L23/31 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L33/56 ,  H01L25/04 ,  H01L31/02 ,  H01L33/50 ,  H01L31/18 ,  H01L33/54

CPC classification number: H01L33/0093 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/0203 ,  H01L31/02005 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

公开(公告)号：US20220109082A1

公开(公告)日：2022-04-07

申请号：US17552657

申请日：2021-12-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L23/31 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L33/56 ,  H01L25/04 ,  H01L31/02 ,  H01L33/50 ,  H01L31/18

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

公开(公告)号：US11239386B2

公开(公告)日：2022-02-01

申请号：US16851232

申请日：2020-04-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L23/31 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L33/56 ,  H01L25/04 ,  H01L31/02 ,  H01L33/50 ,  H01L31/18 ,  H01L33/54

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

公开(公告)号：US09799795B2

公开(公告)日：2017-10-24

申请号：US14780470

申请日：2014-03-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jürgen Moosburger ,  Axel Kaltenbacher ,  Matthias Wolf ,  Georg Dirscherl

IPC: H01L33/00 ,  H01L33/50

CPC classification number: H01L33/0095 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2933/0041

Abstract: In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

公开(公告)号：US12002901B2

公开(公告)日：2024-06-04

申请号：US18212935

申请日：2023-06-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L23/31 ,  H01L25/04 ,  H01L25/075 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/48 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

公开(公告)号：US20200251612A1

公开(公告)日：2020-08-06

申请号：US16851232

申请日：2020-04-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L23/31 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L33/56 ,  H01L25/04 ,  H01L31/02 ,  H01L33/50 ,  H01L31/18

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

公开(公告)号：US20160043271A1

公开(公告)日：2016-02-11

申请号：US14780470

申请日：2014-03-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jürgen Moosburger ,  Axel Kaltenbacher ,  Matthias Wolf ,  Georg Dirscherl

IPC: H01L33/00 ,  H01L33/50

CPC classification number: H01L33/0095 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2933/0041

Abstract: In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

Abstract translation: 在各种示例性实施例中，提供了一种用于产生发射电磁辐射的组件的方法。 在这种情况下，提供了一种组件复合结构，其具有发射电磁辐射的部件，该组件在组件复合结构中物理上彼此耦合。 在每种情况下，赋予组分至少一种组分 - 个体性质。 根据组件的确定性质，形成用于覆盖组件复合结构中的部件的结构掩模，其中结构掩模具有对应于部件的结构掩模切口，其结构掩模切口以组件个别方式形成，取决于 相应组件的属性。 结构掩模切口提供暴露在结构掩模切口中的荧光体区域上的部件。 在这些部件的荧光体区域上形成荧光体层。

公开(公告)号：US10665747B2

公开(公告)日：2020-05-26

申请号：US15963408

申请日：2018-04-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L23/31 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L33/56 ,  H01L25/04 ,  H01L33/50 ,  H01L31/18 ,  H01L33/54 ,  H01L31/02

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

公开(公告)号：US20180248074A1

公开(公告)日：2018-08-30

申请号：US15963408

申请日：2018-04-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L31/0232 ,  H01L31/02 ,  H01L33/62 ,  H01L31/18 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L33/0079 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

公开(公告)号：US09985171B2

公开(公告)日：2018-05-29

申请号：US15632544

申请日：2017-06-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L29/18 ,  H01L33/00 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/62 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/0079 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.