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    Optoelectronic component
    3.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08952390B2

    公开(公告)日：2015-02-10

    申请号：US13750966

    申请日：2013-01-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Ralph Wirth ,  Alexander Linkov

    IPC: H01L33/30 ,  H01L25/075 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60

    CPC classification number: H01L25/0753 ,  H01L27/15 ,  H01L33/30 ,  H01L33/32 ,  H01L33/483 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

    Abstract: An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.

    Abstract translation: 光电子部件可用于混合具有不同波长的电磁辐射，特别是在远场中。 光电子部件包括载体。 第一半导体芯片具有用于在第一光谱范围内发射电磁辐射的第一辐射出射表面，并且在载体上设置第二半导体芯片作为用于在第二光谱范围内发射电磁辐射的第二辐射出射表面。 在半导体芯片的远离载体的辐射出射表面上设置漫射层。

    Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element
    5.
    发明授权
    Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element 有权

    公开(公告)号：US10418530B2

    公开(公告)日：2019-09-17

    申请号：US15531349

    申请日：2015-11-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Reiner Windisch ,  Joerg Erich Sorg ,  Ralph Wirth

    IPC: H01L33/50 ,  H01L21/02 ,  H01L23/00 ,  H01L33/56 ,  H01L33/58

    Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.

    Optoelectronic Component
    7.
    发明申请
    Optoelectronic Component 审中-公开
    光电元件

    公开(公告)号：US20170077071A1

    公开(公告)日：2017-03-16

    申请号：US15342261

    申请日：2016-11-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Ralph Wirth ,  Alexander Linkov

    IPC: H01L25/075 ,  H01L33/56 ,  H01L33/58 ,  H01L33/30 ,  H01L33/50 ,  H01L33/60 ,  H01L33/54

    CPC classification number: H01L25/0753 ,  H01L27/15 ,  H01L33/30 ,  H01L33/32 ,  H01L33/483 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

    Abstract: An optoelectronic component for mixing electromagnetic radiation having different wavelengths, for example, for the far field is disclosed. In an embodiment the optoelectronic component includes a carrier, at least one first semiconductor chip arranged on the carrier and having a first radiation exit surface for emitting electromagnetic radiation in a first spectral range and at least one second semiconductor chip arranged on the carrier and having a second radiation exit surface for emitting electromagnetic radiation in a second spectral range, wherein a diffusing layer is arranged on the first and second radiation exit surfaces of the semiconductor chips that face away from the carrier and wherein a reflecting layer is arranged between the first semiconductor chip and the second semiconductor chip, the first and second radiation exit surfaces being free from the reflecting layer at least in regions.

    Abstract translation: 公开了用于混合具有不同波长的电磁辐射的光电子部件，例如用于远场。 在一个实施例中，光电子部件包括载体，布置在载体上的至少一个第一半导体芯片，并具有用于在第一光谱范围内发射电磁辐射的第一辐射出射表面和布置在载体上的至少一个第二半导体芯片， 用于在第二光谱范围内发射电磁辐射的第二辐射出射表面，其中散射层布置在所述半导体芯片的远离所述载体的所述第一和第二辐射出射表面上，并且其中反射层布置在所述第一半导体芯片 和所述第二半导体芯片，所述第一和第二辐射出射表面至少在区域中不含所述反射层。

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