公开(公告)号：US12067285B2

公开(公告)日：2024-08-20

申请号：US18093258

申请日：2023-01-04

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F3/06 ,  G11C7/10 ,  G11C5/04

CPC classification number: G06F3/0656 ,  G06F3/0626 ,  G06F3/0673 ,  G11C7/1006 ,  G11C5/04

Abstract: A buffer circuit includes a primary interface, a secondary interface, and an encoder/decoder circuit. The primary interface is configured to communicate on an n-bit channel, wherein n parallel bits on the n-bit channel are coded using data bit inversion (DBI). The secondary interface is configured to communicate with a plurality of integrated circuit devices on a plurality of m-bit channels, each m-bit channel transmitting m parallel bits without using DBI. And the encoder/decoder circuit is configured to translate data words between the n-bit channel of the primary interface and the plurality of m-bit channels of the secondary interface.

公开(公告)号：US20230360694A1

公开(公告)日：2023-11-09

申请号：US18195877

申请日：2023-05-10

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ming Li

IPC: G11C11/4093 ,  G11C11/4096 ,  G11C5/02 ,  G11C5/04 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48 ,  G11C11/406

CPC classification number: G11C11/4093 ,  G11C11/4096 ,  G11C5/025 ,  G11C5/04 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  G11C5/02 ,  H01L23/481 ,  G11C11/406 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01055 ,  H01L24/73

Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

公开(公告)号：US11755508B2

公开(公告)日：2023-09-12

申请号：US17507588

申请日：2021-10-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Craig E. Hampel ,  Scott C. Best ,  John Yan

IPC: G06F13/16

CPC classification number: G06F13/1678 ,  G06F13/1673 ,  G06F13/1694

Abstract: Described are motherboards with memory-module sockets that accept legacy memory modules for backward compatibility or accept a greater number of configurable modules in support of increased memory capacity. The configurable modules can be backward compatible with legacy motherboards. Equipped with the configurable modules, the motherboards support memory systems with high signaling rates and capacities.

公开(公告)号：US11735287B2

公开(公告)日：2023-08-22

申请号：US18074188

申请日：2022-12-02

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  John Eric Linstadt ,  Paul William Roukema

IPC: G11C29/00 ,  G11C29/44 ,  G11C5/04 ,  G11C11/401 ,  G11C29/02 ,  G11C29/52

CPC classification number: G11C29/4401 ,  G11C5/04 ,  G11C11/401 ,  G11C29/022 ,  G11C29/52 ,  G11C29/76 ,  G11C29/783 ,  G11C29/88 ,  G11C2029/4402

Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

公开(公告)号：US11693801B2

公开(公告)日：2023-07-04

申请号：US17718168

申请日：2022-04-11

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F13/36 ,  G06F13/362 ,  H01L23/48 ,  H01L23/60 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/50 ,  H01L23/00 ,  G06F13/40 ,  G11C11/4096 ,  G11C14/00 ,  G11C16/10 ,  G11C16/26 ,  H01L27/02

CPC classification number: G06F13/362 ,  G06F13/4068 ,  G11C11/408 ,  G11C11/409 ,  G11C11/4096 ,  G11C14/0018 ,  G11C16/10 ,  G11C16/26 ,  H01L23/481 ,  H01L23/50 ,  H01L23/60 ,  H01L24/09 ,  H01L25/0652 ,  H01L25/0657 ,  H01L27/0248 ,  H01L23/48 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05552 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06503 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/00 ,  H01L2924/0002 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/0002 ,  H01L2224/05552 ,  H01L2924/14 ,  H01L2924/00

Abstract: This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.

公开(公告)号：US20220148643A1

公开(公告)日：2022-05-12

申请号：US17532745

申请日：2021-11-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  John E. Linstadt ,  Thomas A. Giovannini ,  Scott C. Best ,  Kenneth L. Wright

IPC: G11C11/4093 ,  G11C5/02 ,  G11C5/06 ,  G11C11/4076 ,  G11C11/408 ,  G11C29/00 ,  H01L25/065 ,  H01L25/10 ,  G11C11/4096 ,  H01L25/18

Abstract: A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. Each DRAM component includes multiplexers that allow either of the data interfaces to write data to or read data from a common set of memory banks, and to selectively relay write and read data to and from other components, bypassing the local banks. Delay elements can impose selected read/write delays to align read and write transactions from and to disparate DRAM components.

公开(公告)号：US20220005542A1

公开(公告)日：2022-01-06

申请号：US17368018

申请日：2021-07-06

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  John Eric Linstadt ,  Paul William Roukema

IPC: G11C29/44 ,  G11C29/00 ,  G11C5/04 ,  G11C11/401 ,  G11C29/02 ,  G11C29/52

Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

公开(公告)号：US20220004472A9

公开(公告)日：2022-01-06

申请号：US16670798

申请日：2019-10-31

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  John Eric Linstadt ,  Scott C. Best

IPC: G06F11/20 ,  G11C29/52 ,  G11C11/4093

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

公开(公告)号：US20210193215A1

公开(公告)日：2021-06-24

申请号：US17135112

申请日：2020-12-28

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ming Li

IPC: G11C11/4093 ,  G11C11/4096 ,  G11C5/02 ,  G11C5/04 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48 ,  G11C11/406

Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

公开(公告)号：US20210027826A1

公开(公告)日：2021-01-28

申请号：US16898653

申请日：2020-06-11

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Richard E. Warmke ,  David B. Roberts ,  Frank Lambrecht

IPC: G11C11/4076 ,  G06F1/10 ,  G11C7/10 ,  H03L7/07 ,  H03L7/081 ,  H04L7/033 ,  G11C7/22 ,  G11C11/4091

Abstract: A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.