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    Hybrid magnetic/electrostatic deflector for ion implantation systems
    1.
    发明授权
    Hybrid magnetic/electrostatic deflector for ion implantation systems 有权
    用于离子注入系统的混合磁/静电偏转器

    公开(公告)号：US06881966B2

    公开(公告)日：2005-04-19

    申请号：US10461702

    申请日：2003-06-13

    申请人： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

    发明人： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

    IPC分类号： H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

    摘要： A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

    摘要翻译： 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

    Electrostatic lens for ion beams
    4.
    发明授权
    Electrostatic lens for ion beams 有权
    离子束静电透镜

    公开(公告)号：US07112809B2

    公开(公告)日：2006-09-26

    申请号：US10894209

    申请日：2004-07-19

    申请人： Robert D. Rathmell ,  Victor M. Benveniste

    发明人： Robert D. Rathmell ,  Victor M. Benveniste

    IPC分类号： H01J37/317

    CPC分类号： H01J37/12 ,  H01J37/3171

    摘要： A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.

    摘要翻译： 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构横跨离子束的宽度延伸，用于偏离进入透镜结构的离子。 透镜结构包括用于减速的第一电极和用于加速离子的第二电极。 透镜结构模式控制器选择性地激活加速或减速电极以使离子进入透镜结构以期望的轨迹离开所述透镜结构，而不管轨迹离子进入透镜结构。

    Electrostatic parallelizing lens for ion beams
    5.
    发明授权
    Electrostatic parallelizing lens for ion beams 有权
    离子束静电平行化透镜

    公开(公告)号：US06774377B1

    公开(公告)日：2004-08-10

    申请号：US10607239

    申请日：2003-06-26

    申请人： Robert D. Rathmell ,  Victor M. Benveniste

    发明人： Robert D. Rathmell ,  Victor M. Benveniste

    IPC分类号： H01J37317

    CPC分类号： H01J37/3171 ,  H01J37/12

    摘要： A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends on opposite sides of a beam path across a width of the ion beam for deflecting ions entering the lens structure. The lens structure include a first electrode for decelerating ions and a second electrode for accelerating the ions to cause ions entering the lens structure to exit said lens structure with approximately the same exit trajectory regardless of the trajectory ions enter the lens structure. In an alternate construction the lens structure can include a first electrode for accelerating ions and a second electrode for decelerating ions.

    摘要翻译： 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构在离子束的宽度上的光束路径的相对侧上延伸，用于偏转进入透镜结构。 透镜结构包括用于减速离子的第一电极和用于加速离子的第二电极，使离子进入透镜结构以离开所述透镜结构以大致相同的出射轨迹，而与轨迹离子进入透镜结构无关。 在替代结构中，透镜结构可以包括用于加速离子的第一电极和用于减速离子的第二电极。

    Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement
    6.
    发明授权
    Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement 有权
    电感耦合等离子体喷枪采用浸入式低电感FR线圈和多脉冲磁排列

    公开(公告)号：US08471476B2

    公开(公告)日：2013-06-25

    申请号：US12901198

    申请日：2010-10-08

    申请人： Peter F. Kurunczi ,  Victor M. Benveniste ,  Oliver V. Naumovski

    发明人： Peter F. Kurunczi ,  Victor M. Benveniste ,  Oliver V. Naumovski

    IPC分类号： H05B31/26 ,  H01J37/317

    CPC分类号： H01J37/3211 ,  H01J37/026 ,  H01J37/3171 ,  H01J37/32688 ,  H01J2237/03

    摘要： A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.

    摘要翻译： 公开了一种用于提供电感耦合的射频等离子体喷枪的装置。 在一个特定的示例性实施例中，该装置是离子注入系统中的等离子体喷枪。 等离子体喷枪可以包括具有一个或多个孔的等离子体室; 能够向所述等离子体室供给至少一种气态物质的气体源; 设置在等离子体室内的单匝线圈和耦合到线圈的电源，用于感应耦合射频电力以激发等离子体室中的至少一种气态物质以产生等离子体。 等离子体室的内表面可以不含含金属的材料，并且等离子体可能不暴露于等离子体室内的任何含金属的组分。 等离子体室可以包括用于控制等离子体的多个磁体。 可以在等离子体室中设置出口孔，以使所得到的等离子体的带负电粒子能够接合作为相关离子注入系统的一部分的离子束。 在一个实施例中，磁体设置在孔的相对侧上，并用于操纵等离子体的电子。

    INDUCTIVELY COUPLED PLASMA FLOOD GUN USING AN IMMERSED LOW INDUCTANCE FR COIL AND MULTICUSP MAGNETIC ARRANGEMENT
    7.
    发明申请
    INDUCTIVELY COUPLED PLASMA FLOOD GUN USING AN IMMERSED LOW INDUCTANCE FR COIL AND MULTICUSP MAGNETIC ARRANGEMENT 有权
    电感耦合等离子体喷枪使用低电感FR线圈和MULTICUSP磁性布置

    公开(公告)号：US20120085917A1

    公开(公告)日：2012-04-12

    申请号：US12901198

    申请日：2010-10-08

    申请人： Peter F. Kurunczi ,  Victor M. Benveniste ,  Oliver V. Naumovski

    发明人： Peter F. Kurunczi ,  Victor M. Benveniste ,  Oliver V. Naumovski

    IPC分类号： H01J1/50 ,  H01J3/14

    CPC分类号： H01J37/3211 ,  H01J37/026 ,  H01J37/3171 ,  H01J37/32688 ,  H01J2237/03

    摘要： A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.

    摘要翻译： 公开了一种用于提供电感耦合的射频等离子体喷枪的装置。 在一个特定的示例性实施例中，该装置是离子注入系统中的等离子体喷枪。 等离子体喷枪可以包括具有一个或多个孔的等离子体室; 能够向所述等离子体室供给至少一种气态物质的气体源; 设置在等离子体室内的单匝线圈和耦合到线圈的电源，用于感应耦合射频电力以激发等离子体室中的至少一种气态物质以产生等离子体。 等离子体室的内表面可以不含含金属的材料，并且等离子体可能不暴露于等离子体室内的任何含金属的组分。 等离子体室可以包括用于控制等离子体的多个磁体。 可以在等离子体室中设置出口孔，以使所得到的等离子体的带负电粒子能够接合作为相关离子注入系统的一部分的离子束。 在一个实施例中，磁体设置在孔的相对侧上，并用于操纵等离子体的电子。

    Techniques for independently controlling deflection, deceleration and focus of an ion beam
    8.
    发明授权
    Techniques for independently controlling deflection, deceleration and focus of an ion beam 有权
    用于独立控制离子束的偏转，减速和聚焦的技术

    公开(公告)号：US07888653B2

    公开(公告)日：2011-02-15

    申请号：US12348091

    申请日：2009-01-02

    申请人： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

    发明人： Peter L. Kellerman ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

    IPC分类号： H01J3/14 ,  H01J49/22 ,  H01J23/083

    CPC分类号： H01J37/1471 ,  H01J37/12 ,  H01J37/3171

    摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.

    摘要翻译： 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。

    Ion beam scanning control methods and systems for ion implantation uniformity
    10.
    发明申请
    Ion beam scanning control methods and systems for ion implantation uniformity 有权
    离子束扫描控制方法和离子注入系统的均匀性

    公开(公告)号：US20080067444A1

    公开(公告)日：2008-03-20

    申请号：US11784709

    申请日：2007-04-09

    申请人： Victor M. Benveniste ,  Edward C. Eisner ,  Bo H. Vanderberg

    发明人： Victor M. Benveniste ,  Edward C. Eisner ,  Bo H. Vanderberg

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  G21K5/04 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31703

    摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

    摘要翻译： 本发明的一个实施例涉及一种用于调整扫描离子束的带状光束通量的方法。 在该方法中，以扫描速率扫描离子束，并且当扫描离子束时测量多个动态光束分布。 基于扫描光束的多个测量的动态光束分布来计算校正的扫描速率。 以校正的扫描速率扫描离子束以产生校正的带状离子束。 还公开了其它方法和系统。