公开(公告)号：US20190273181A1

公开(公告)日：2019-09-05

申请号：US16409603

申请日：2019-05-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mi Hee LEE ,  Chang Yeon KIM ,  Ju Yong PARK ,  Jong Kyun YOU ,  Joon Hee LEE

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/32 ,  H01L33/10

Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

公开(公告)号：US20190148597A1

公开(公告)日：2019-05-16

申请号：US16225269

申请日：2018-12-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Chang Yeon KIM ,  Joon Sup LEE ,  Dae Woong SUH ,  Won Young ROH ,  Ju Yong PARK ,  Seung Hyun KIM

IPC: H01L33/38 ,  H01L27/15

Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.

公开(公告)号：US20210074887A1

公开(公告)日：2021-03-11

申请号：US17099499

申请日：2020-11-16

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ju Yong PARK ,  Seong Gyu JANG ,  Kyu Ho LEE ,  Joon Hee LEE

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

公开(公告)号：US20150060923A1

公开(公告)日：2015-03-05

申请号：US14474982

申请日：2014-09-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ju Yong PARK ,  Jong Kyun YOU ,  Chang Yeon KIM

IPC: H01L33/18 ,  H01L33/60

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016

Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.

Abstract translation: 一种发光二极管及其制造方法，所述发光二极管包括：氮化镓系化合物半导体层; 包括Mg的第一金属层，并且以与氮化镓基化合物半导体层欧姆接触的岛的形式设置; 包含Ni的第二金属层，覆盖所述第一金属层，并且使所述氮化镓基化合物半导体层与所述第一金属层的岛之间接触; 以及覆盖第二金属层的反射金属层。

公开(公告)号：US20180182921A1

公开(公告)日：2018-06-28

申请号：US15851468

申请日：2017-12-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu JANG ,  Ju Yong PARK ,  Kyu Ho LEE ,  Joon Hee LEE

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material, wherein the Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.

公开(公告)号：US20170279020A1

公开(公告)日：2017-09-28

申请号：US15514492

申请日：2015-09-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon KIM ,  Ju Yong PARK ,  Sung Su SON

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/46 ,  H01L23/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00 ,  H01L33/64 ,  H01L33/50

CPC classification number: H01L33/62 ,  H01L24/11 ,  H01L24/13 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/46 ,  H01L33/486 ,  H01L33/502 ,  H01L33/647 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/11505 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13269 ,  H01L2224/1329 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2933/0091

Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

公开(公告)号：US20200227595A1

公开(公告)日：2020-07-16

申请号：US16830191

申请日：2020-03-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu JANG ,  Ju Yong PARK ,  Kyu Ho LEE ,  Joon Hee LEE

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.