公开(公告)号：US09443797B2

公开(公告)日：2016-09-13

申请号：US13832781

申请日：2013-03-15

Applicant: STATS ChipPAC, Ltd.

Inventor： Pandi C. Marimuthu ,  Sheila Marie L. Alvarez ,  Yaojian Lin ,  Jose A. Caparas ,  Yang Kern Jonathan Tan

IPC: H01L21/56 ,  H01L23/00 ,  H01L25/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10 ,  H01L25/065 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L21/2633 ,  H01L21/311 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/32 ,  H01L24/82 ,  H01L25/105 ,  H01L2224/02311 ,  H01L2224/02379 ,  H01L2224/0558 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24227 ,  H01L2224/25171 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49174 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/821 ,  H01L2224/94 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/03

Abstract: A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.

Abstract translation: 半导体器件具有设置在衬底的第一表面上的衬底和半导体管芯。 线柱附接到基底的第一表面。 线螺柱包括基部和杆部。 在衬底的第二表面上形成焊盘。 密封剂沉积在衬底，半导体管芯和线螺柱上。 密封剂的一部分被LDA去除以暴露线螺柱。 通过LDA去除一部分密封剂以暴露基底。 互连结构形成在密封剂上并电连接到线芯和半导体管芯。 在互连结构上形成凸点。 半导体封装设置在密封剂上并电连接到衬底。 分立半导体器件设置在密封剂上并电连接到衬底。

公开(公告)号：US09330994B2

公开(公告)日：2016-05-03

申请号：US14228531

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Zigmund R. Camacho ,  Bartholomew Liao ,  Sheila Marie L. Alvarez ,  HeeJo Chi ,  Kelvin Dao

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/3107 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract translation: 半导体器件具有沉积在半导体管芯上的半导体管芯和密封剂。 在半导体管芯和密封剂上形成绝缘层。 通过激光辐射在绝缘层中形成包括第一导电表面的第一通道。 在绝缘层中注入激光激活的催化剂，以在激光辐射时在第一通道中形成第一导电表面。 通过密封剂形成垂直互连。 第一导电层在第一通道上形成在第一导电表面上。 通过激光辐射在密封剂中形成包括第二导电表面的第二通道。 催化剂注入到密封剂中以在激光辐射下在第二通道中形成第二导电表面。 第二导电层在第二通道上形成在第二导电表面上。 在第一导电层上形成互连结构。

公开(公告)号：US20140077364A1

公开(公告)日：2014-03-20

申请号：US13832781

申请日：2013-03-15

Applicant: STATS CHIPPAC, LTD.

Inventor： Pandi C. Marimuthu ,  Sheila Marie L. Alvarez ,  Yaojian Lin ,  Jose A. Caparas ,  Yang Kern Jonathan Tan

IPC: H01L23/498 ,  H01L21/56

CPC classification number: H01L25/0657 ,  H01L21/2633 ,  H01L21/311 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/32 ,  H01L24/82 ,  H01L25/105 ,  H01L2224/02311 ,  H01L2224/02379 ,  H01L2224/0558 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24227 ,  H01L2224/25171 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49174 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/821 ,  H01L2224/94 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/03

Abstract: A semiconductor device has a substrate and semiconductor die disposed over a first surface of the substrate. A wire stud is attached to the first surface of the substrate. The wire stud includes a base portion and stem portion. A bonding pad is formed over a second surface of the substrate. An encapsulant is deposited over the substrate, semiconductor die, and wire stud. A portion of the encapsulant is removed by LDA to expose the wire stud. A portion of the encapsulant is removed by LDA to expose the substrate. An interconnect structure is formed over the encapsulant and electrically connected to the wire stud and semiconductor die. A bump is formed over the interconnect structure. A semiconductor package is disposed over the encapsulant and electrically connected to the substrate. A discrete semiconductor device is disposed over the encapsulant and electrically connected to the substrate.

Abstract translation: 半导体器件具有设置在衬底的第一表面上的衬底和半导体管芯。 线柱附接到基底的第一表面。 线螺柱包括基部和杆部。 在衬底的第二表面上形成焊盘。 密封剂沉积在衬底，半导体管芯和线螺柱上。 密封剂的一部分被LDA去除以暴露线螺柱。 通过LDA去除一部分密封剂以暴露基底。 互连结构形成在密封剂上并电连接到线芯和半导体管芯。 在互连结构上形成凸点。 半导体封装设置在密封剂上并电连接到衬底。 分立半导体器件设置在密封剂上并电连接到衬底。

公开(公告)号：US20150279778A1

公开(公告)日：2015-10-01

申请号：US14228531

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Zigmund R. Camacho ,  Bartholomew Liao ,  Sheila Marie L. Alvarez ,  HeeJo Chi ,  Kelvin Dao

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/768

CPC classification number: H01L23/3107 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract translation: 半导体器件具有沉积在半导体管芯上的半导体管芯和密封剂。 在半导体管芯和密封剂上形成绝缘层。 通过激光辐射在绝缘层中形成包括第一导电表面的第一通道。 在绝缘层中注入激光激活的催化剂，以在激光辐射时在第一通道中形成第一导电表面。 通过密封剂形成垂直互连。 第一导电层在第一通道上形成在第一导电表面上。 通过激光辐射在密封剂中形成包括第二导电表面的第二通道。 催化剂注入到密封剂中以在激光辐射下在第二通道中形成第二导电表面。 第二导电层在第二通道上形成在第二导电表面上。 在第一导电层上形成互连结构。