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公开(公告)号：US20170148880A1
公开(公告)日：2017-05-25
申请号：US15343679
申请日：2016-11-04
发明人： Fuminori Mitsuhashi , Takashi Ishizuka , Masaki Ueno , Yoshihiro Tsukuda , Yasunori Tateno , Maki Suemitsu , Hirokazu Fukidome , Hiroyuki Nagasawa
CPC分类号： H01L29/1606 , H01L21/02378 , H01L21/02527 , H01L21/02612 , H01L21/043 , H01L21/044 , H01L29/0657 , H01L29/41775 , H01L29/66045 , H01L29/7781 , H01L29/78684
摘要： A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G′/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.
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2.发明授权公开(公告)号：US09818895B2
公开(公告)日：2017-11-14
申请号：US14694278
申请日：2015-04-23
发明人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , B82Y20/00 , H01L31/105 , H01L31/0304 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01L31/1844
摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.
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公开(公告)号：US09806156B2
公开(公告)日：2017-10-31
申请号：US15343679
申请日：2016-11-04
发明人： Fuminori Mitsuhashi , Takashi Ishizuka , Masaki Ueno , Yoshihiro Tsukuda , Yasunori Tateno , Maki Suemitsu , Hirokazu Fukidome , Hiroyuki Nagasawa
CPC分类号： H01L29/1606 , H01L21/02378 , H01L21/02527 , H01L21/02612 , H01L21/043 , H01L21/044 , H01L29/0657 , H01L29/41775 , H01L29/66045 , H01L29/7781 , H01L29/78684
摘要： A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G′/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.
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4.发明申请GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER 审中-公开III-V族化合物半导体照相检测器，III-V族化合物半导体照相检测器，照相检测器和外延波形的方法公开(公告)号：US20150001466A1
公开(公告)日：2015-01-01
申请号：US14490128
申请日：2014-09-18
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Youichi Nagai
IPC分类号： H01L31/0352 , H01L31/0304
CPC分类号： H01L31/035209 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L31/03042 , H01L31/03046 , H01L31/035236 , H01L31/109 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.
摘要翻译： 本发明的目的是提供一种III-V族化合物半导体光电检测器，其包括具有含有Sb作为V族构成元素的III-V族化合物半导体层和n型InP窗口层的吸收层，得到 在减少的暗电流。 由于在吸收层21的GaAsSb层生长期间提供的锑的记忆效应，在吸收层23上生长的InP层23含有锑作为杂质。在III-V族化合物半导体光电检测器11中， InP层23含有锑作为杂质，并掺杂有硅作为n型掺杂剂。 虽然InP层23中的锑杂质产生空穴，但是包含在InP层23中的硅补偿所生成的载流子。 结果，InP层23的第二部分23d具有足够的n型导电性。
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5.发明授权公开(公告)号：US11081605B2
公开(公告)日：2021-08-03
申请号：US16635482
申请日：2018-08-24
发明人： Takuma Fuyuki , Tomohiro Doi , Takashi Go , Takashi Ishizuka
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/109 , H01L31/0304
摘要： A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer formed of a group III-V compound semiconductor and disposed in contact with the second element layer. In the first element layer, the thickness of a region in which the content of Sb decreases in a direction away from the substrate from 80% of the maximum content of Sb in the second element layer to 6% of the maximum content is from 0.5 nm to 3.0 nm inclusive.
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6.发明申请LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING THE EPITAXIAL WAFER 审中-公开发光元件，外延波形和生产外延波形的方法公开(公告)号：US20140367640A1
公开(公告)日：2014-12-18
申请号：US14376388
申请日：2013-01-30
发明人： Kei Fujii , Takashi Ishizuka , Katsushi Akita
CPC分类号： H01L33/06 , B82Y20/00 , C23C16/301 , C30B25/183 , C30B29/40 , C30B29/42 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L33/0062 , H01L33/30 , H01S5/3422 , H01S2304/04
摘要： Provided are an epitaxial wafer and a light-emitting element having a type-II MQW formed of III-V compound semiconductors and configured to emit light with a sufficiently high intensity. The method includes a step of growing an active layer having a type-II multi-quantum well structure (MQW) on a III-V compound semiconductor substrate, wherein, in the step of forming the type-II multi-quantum well structure, the type-II multi-quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources such that a number of pairs of the type-II multi-quantum well structure is 25 or more.
摘要翻译： 提供了外延晶片和具有由III-V族化合物半导体形成的II型MQW并被配置为以足够高的强度发光的发光元件。 该方法包括在III-V族化合物半导体衬底上生长具有II型多量子阱结构（MQW）的有源层的步骤，其中在形成II型多量子阱结构的步骤中， II型多量子阱结构通过仅使用金属有机源的金属 - 有机气相外延形成，使得多对II型多量子阱结构为25以上。
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公开(公告)号：US10790401B2
公开(公告)日：2020-09-29
申请号：US16407521
申请日：2019-05-09
发明人： Takuma Fuyuki , Takashi Go , Takashi Ishizuka
IPC分类号： H01L31/0304 , H01L31/0352 , H01L31/109 , H01L31/18 , H01L27/146 , H01L31/12
摘要： A semiconductor stacked body includes a base layer containing a III-V group compound semiconductor, a light-receiving layer containing a III-V group compound semiconductor, a control layer containing a III-V group compound semiconductor and disposed in contact with the light-receiving layer, a diffusion blocking layer containing a III-V group compound semiconductor and a p-type impurity that generates a p-type carrier, the diffusion blocking layer having a p-type impurity concentration of 1×1016 cm−3 or less, and a contact layer containing a III-V group compound semiconductor and having p-type conductivity. These layers are stacked in this order. The concentration of an element in the control layer, the element being identical to a group V element contained in the light-receiving layer, is lower on a main surface of the control layer adjacent to the diffusion blocking layer than on a main surface of the control layer adjacent to the light-receiving layer.
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8.发明申请公开(公告)号：US20190148914A1
公开(公告)日：2019-05-16
申请号：US16189794
申请日：2018-11-13
发明人： Kei Fujii , Toshiyuki Tanahashi , Takashi Ishizuka , Susumu Yoshimoto , Takamichi Sumitomo , Koji Nishizuka , Suguru Arikata
摘要： A vertical cavity surface emitting laser includes: a supporting base having a principal surface including III-V compound semiconductor containing gallium and arsenic as constituent elements; and a post disposed on the principal surface. The post has a lower spacer region including a III-V compound semiconductor containing gallium and arsenic as group-III elements, and an active layer having a quantum well structure disposed on the lower spacer region. The quantum well structure has a concentration of carbon in a range of 2×1016 cm−3 or more to 5×1016 cm−3 or less. The quantum well structure includes a well layer and a barrier layer. The well layer includes a III-V compound semiconductor containing indium as a group-III element, and the barrier layer includes a III-V compound semiconductor containing indium and aluminum as group-III elements. The lower spacer region is disposed between the supporting base and the active layer.
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9.发明申请公开(公告)号：US20170207308A1
公开(公告)日：2017-07-20
申请号：US15315523
申请日：2015-06-02
IPC分类号： H01L29/36 , H01L21/285 , H01L29/66 , H01L29/20 , H01L29/872
CPC分类号： H01L29/36 , H01L21/205 , H01L21/28581 , H01L29/0615 , H01L29/2003 , H01L29/66143 , H01L29/66212 , H01L29/872
摘要： A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×1016 cm−3 or less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×1015 cm−3 or less.
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公开(公告)号：US09680040B2
公开(公告)日：2017-06-13
申请号：US14784817
申请日：2014-04-16
发明人： Kaoru Shibata , Katsushi Akita , Kei Fujii , Takashi Ishizuka
IPC分类号： H01L33/00 , H01L31/0352 , H01S5/343 , H01L27/146 , H01L31/0304 , H01L31/109 , H01L31/18 , H01S5/042 , H01S5/30 , H01S5/34
CPC分类号： H01L31/035236 , H01L27/1464 , H01L27/14652 , H01L31/03046 , H01L31/109 , H01L31/1844 , H01S5/0425 , H01S5/305 , H01S5/3422 , H01S5/34306 , H01S2301/173
摘要： A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure.
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