公开(公告)号：US20160126419A1

公开(公告)日：2016-05-05

申请号：US14920509

申请日：2015-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Seong KUM ,  Dae Myung CHUN ,  Ji Hye YEON ,  Han Kyu SEONG ,  Jin Sub LEE ,  Young Jin CHOI ,  Jae Hyeok HEO

IPC: H01L33/32 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.

Abstract translation: 提供了一种半导体发光器件，其包括由第一导电型半导体材料形成的基底层和设置在基底层上以彼此间隔开的多个发光纳米结构，并且包括第一导电型 半导体芯，有源层和第二导电型半导体层。 第一导电型半导体芯包括从基层向上延伸的棒层，以及设置在棒层上的封盖层。 在多个发光纳米结构的至少一部分中，棒层的高度不同，并且在多个发光纳米结构的至少一部分中，覆盖层的高度不同。

公开(公告)号：US20170286044A1

公开(公告)日：2017-10-05

申请号：US15333692

申请日：2016-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Youn KIM ,  Hyun Seong KUM ,  Young Hwan PARK

IPC: G06F3/14 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1343 ,  H01L33/50 ,  H01L27/32 ,  H01L25/075 ,  H01L33/62 ,  H01L33/54 ,  G09G3/34 ,  G02F1/1333

CPC classification number: G06F3/1446 ,  G02F1/133345 ,  G02F1/13336 ,  G02F1/133514 ,  G02F1/133528 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/2003 ,  G09G3/2096 ,  G09G3/32 ,  G09G3/3208 ,  G09G3/3225 ,  G09G3/3413 ,  G09G3/342 ,  G09G3/3607 ,  G09G3/3648 ,  G09G2300/026 ,  G09G2300/0426 ,  G09G2320/0242 ,  G09G2320/0626 ,  H01L25/0753 ,  H01L27/1255 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3293 ,  H01L33/504 ,  H01L33/54 ,  H01L33/62

Abstract: A multivision apparatus may include a display panel that includes a display screen including a first region and an adjacent second region. The first region may include first pixels, and the second region may include second pixels. The first pixels and the second pixels have different structures. The display panel may display a single image across the first region and the second region of the display screen. The multivision apparatus may include an array of interconnected display panels configured to collectively display an image, based on each given display panel displaying a separate sub-image in the first and second regions of the given display panel.

公开(公告)号：US20150221825A1

公开(公告)日：2015-08-06

申请号：US14521423

申请日：2014-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geun-Woo KO ,  Nam Goo CHA ,  Hyun Seong KUM

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/54 ,  H01L33/46 ,  H01L33/62 ,  H01L33/58

CPC classification number: H01L33/24 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/16245

Abstract: A semiconductor light emitting device includes a substrate, a first conductivity-type semiconductor base layer disposed on the substrate, a plurality of light emitting nanostructures, a transparent electrode layer, and a first electrode. The plurality of light emitting nanostructures are disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer and include a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer, respectively. The transparent electrode layer is disposed on the second conductivity-type semiconductor layer and between the plurality of light emitting nanostructures. The first electrode is electrically connected to the second conductivity-type semiconductor layer by penetrating the substrate.

Abstract translation: 半导体发光器件包括衬底，设置在衬底上的第一导电型半导体基底层，多个发光纳米结构，透明电极层和第一电极。 多个发光纳米结构被设置为在第一导电型半导体基底层上彼此间隔开，并且分别包括第一导电型半导体芯，有源层和第二导电型半导体层。 透明电极层设置在第二导电型半导体层上，并且在多个发光纳米结构之间。 第一电极通过穿透基板与第二导电型半导体层电连接。

公开(公告)号：US20160099376A1

公开(公告)日：2016-04-07

申请号：US14867659

申请日：2015-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyeok HEO ,  Jin Sub LEE ,  Young Jin CHOI ,  Hyun Seong KUM ,  Ji Hye YEON ,  Dae Myung CHUN ,  Jung Sub KIM ,  Han Kyu SEONG

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/06 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/145 ,  H01L33/24

Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.

Abstract translation: 根据一个示例性实施例，一种制造纳米结构半导体发光器件的方法包括：将第一导电型氮化物半导体材料的纳米孔彼此间隔开，并形成包含活性层的多层壳， 在每个纳米孔的表面上的第二导电型氮化物半导体层。 通过控制源气体通量，源气体流量，室压力，生长温度和生长速率的至少一个工艺参数来形成多层壳体的至少一部分，从而具有更高的膜厚度 均匀性

公开(公告)号：US20150102365A1

公开(公告)日：2015-04-16

申请号：US14338174

申请日：2014-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Hyun Seong KUM ,  Ju Bin SEO ,  Dong Hoon LEE

IPC: H01L27/15

CPC classification number: H01L33/24 ,  H01L33/08 ,  H01L33/18 ,  H01L33/385

Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.

Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层和多个发光纳米结构。 基层由第一导电型半导体形成。 绝缘层设置在基底层上并具有多个开口，基底层的区域暴露在该开口中。 每个发光纳米结构设置在基底层的暴露区域上，并且包括由第一导电型半导体形成的纳米孔，以及顺序地设置在纳米孔的侧表面上的有源层和第二导电类型半导体层。 发光纳米结构的上表面是非平面的，并且包含不含第二导电型半导体层的部分，以便防止器件驱动期间的光发射。