公开(公告)号：US20210104504A1

公开(公告)日：2021-04-08

申请号：US16325709

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  Charles Forman ,  John T. Leonard ,  SeungGeun Lee ,  Dan Cohen ,  Robert M. Farrell ,  Michael Iza ,  Burhan Saifaddin ,  Abdullah Almogbel ,  Humberto Foronda ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L25/16 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

公开(公告)号：US20230369538A1

公开(公告)日：2023-11-16

申请号：US18309994

申请日：2023-05-01

Applicant: The Regents of the University of California

Inventor： Michael Wang ,  Christian J. Zollner ,  Yifan Yao ,  Michael Iza ,  Shuji Nakamura

IPC: H01L33/06 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/22 ,  H01L33/0075 ,  H01L33/0008

Abstract: A multilayer structure comprising regions of higher aluminum (Al) composition as compared to adjacent layers, in combination with an undulating active region and controlled buffer layer crystal quality, promotes radiative recombination and improves the performance and efficiency of ultraviolet (UV) or far-UV light-emitting diodes (LEDs), laser diode (LDs), or other light emitting devices.

公开(公告)号：US20230307579A1

公开(公告)日：2023-09-28

申请号：US18041269

申请日：2021-08-11

Applicant: The Regents of the University of California

Inventor： Panpan Li ,  Hongjian Li ,  Michael Iza ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/22 ,  H01L25/16 ,  H01L27/15

CPC classification number: H01L33/32 ,  H01L33/0016 ,  H01L33/22 ,  H01L25/167 ,  H01L33/007 ,  H01L27/156

Abstract: A method to fabricate micro-size III-nitride light emitting diodes (μLEDs) with an epitaxial tunnel junction comprised of a p+GaN layer, an InxAlyGazN insertion layer, and an n+GaN layer, grown using metalorganic chemical vapor deposition (MOCVD), wherein the μLEDs have a low forward the GaN layers, which reduces a depletion width of the tunnel junction and increases the tunneling probability. The μLEDs are fabricated with dimensions that vary from 25 to 10,000 μm2. It was found that the InxAlyGazN insertion layer can reduce the forward voltage at 20 A/cm2 by at least 0.6 V. The tunnel junction μLEDs with an n-type and p-type InxAlyGazN insertion layer had a low forward voltage at 20 A/cm2 that was very stable. At dimensions smaller than 1600 μm2, the low forward voltage is less than 3.2 V.

公开(公告)号：US11735419B2

公开(公告)日：2023-08-22

申请号：US16752428

申请日：2020-01-24

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/201

CPC classification number: H01L21/02664 ,  H01L21/0254 ,  H01L21/02617 ,  H01L29/201 ,  H01L29/2003

Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

公开(公告)号：US20150115220A1

公开(公告)日：2015-04-30

申请号：US14511966

申请日：2014-10-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/04

Abstract: A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN, where 0

Abstract translation: 一种氮化物发光二极管，包括形成在图案化衬底上或上面的至少一个氮化物基有源区，其中所述有源区由至少一个量子阱结构构成; 以及在有源区上或上方形成的具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

公开(公告)号：US20230420617A1

公开(公告)日：2023-12-28

申请号：US18248817

申请日：2021-10-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael Iza ,  Matthew S. Wong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L33/32

Abstract: A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga2O3.

公开(公告)号：US20200243334A1

公开(公告)日：2020-07-30

申请号：US16752428

申请日：2020-01-24

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L21/02 ,  H01L29/201 ,  H01L29/20

Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

公开(公告)号：US20140191244A1

公开(公告)日：2014-07-10

申请号：US14205947

申请日：2014-03-12

Applicant: The Regents of the University of California

Inventor： John F. Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/265 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract translation: （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US20130099277A1

公开(公告)日：2013-04-25

申请号：US13660782

申请日：2012-10-25

Applicant: The Regents of the University of California

Inventor： James S. Speck ,  Evelyn L. Hu ,  Claude C.A. Weisbuch ,  Yong Seok Choi ,  Gregor Koblmuller ,  Michael Iza ,  Christophe Hurni

IPC: H01L33/02 ,  H01L21/306 ,  H01L29/20

CPC classification number: H01L21/30621 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.

Abstract translation: 通过将蚀刻停止层结合到结构中以及受控的高选择性蚀刻工艺，选择性地干蚀刻N面（Al，In，Ga）N异质结构的方法。 具体地说，该方法包括：（1）在器件结构的生长中结合容易形成的兼容的蚀刻停止层，（2）使用激光剥离或类似工艺来将活性层与 原始生长衬底，和（3）在N面（Al，In，Ga）N上实现高于14：1的蚀刻选择性。

公开(公告)号：US20230268462A1

公开(公告)日：2023-08-24

申请号：US18014541

申请日：2021-07-09

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/0753 ,  H01L33/007

Abstract: A fully transparent UV LED or far-UV LED is disclosed, in which all semiconductor layers except the active region are transparent to the radiation emitted in the active region. The key technology enabling this invention is the transparent tunnel junction, which replaces the optically absorbing p-GaN and metal mirror p-contact currently found in all commercially available UV LEDs. The tunnel junction also enables the use of a second n-AlGaN current spreading layer above the active region (on the p-side of the device) similar to the current spreading layer already found below the active region (on the n-side of the device). Therefore, small-area and/or remote p- and n-contacts can be used, and light can be extracted from both the top-side and bottom-side of the device. This fully transparent semiconductor device can then be packaged using transparent materials into a fully transparent UV LED or far-UV LED with high brightness and efficiency.